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Results:
1-7
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Results: 7
Authors:
KHANIN Y
VDOVIN E
NOVOSELOV K
DUBROVSKII Y
OMLING P
CARLSSON SB
Citation: Y. Khanin et al., GAMMA-X TUNNELING IN GAAS ALAS/GAAS HETEROSTRUCTURE/, JPN J A P 1, 37(6A), 1998, pp. 3245-3247
Authors:
CARLSSON SB
DEPPERT K
JUNNO T
MAGNUSSON MH
MONTELIUS L
SAMUELSON L
Citation: Sb. Carlsson et al., ANGSTROM-LEVEL, REAL-TIME CONTROL OF THE FORMATION OF QUANTUM DEVICES, Semiconductor science and technology, 13(8A), 1998, pp. 119-123
Authors:
MONTELIUS L
JUNNO T
CARLSSON SB
MAGNUSSON MH
DEPPERT K
XU H
SAMUELSON L
Citation: L. Montelius et al., ASSEMBLY AND ANALYSIS OF QUANTUM DEVICES USING SPM BASED METHODS, Microelectronics and reliability, 38(6-8), 1998, pp. 943-950
Authors:
JUNNO T
CARLSSON SB
XU HQ
MONTELIUS L
SAMUELSON L
Citation: T. Junno et al., FABRICATION OF QUANTUM DEVICES BY ANGSTROM-LEVEL MANIPULATION OF NANOPARTICLES WITH AN ATOMIC-FORCE MICROSCOPE, Applied physics letters, 72(5), 1998, pp. 548-550
Authors:
MONTELIUS L
JUNNO T
CARLSSON SB
SAMUELSON L
Citation: L. Montelius et al., AFM-BASED FABRICATION OF LATERAL SINGLE-ELECTRON TUNNELING STRUCTURESFOR ELEVATED-TEMPERATURE OPERATION, Microelectronic engineering, 35(1-4), 1997, pp. 281-284
Authors:
CARLSSON N
ANAND S
CARLSSON SB
GUSTAFSON B
OMLING P
RAMVALL P
SAMUELSON L
SEIFERT W
WANG Q
Citation: N. Carlsson et al., MOVPE GROWTH OF INP GAINAS AND GAAS/GAINP HETEROSTRUCTURES FOR ELECTRONIC TRANSPORT APPLICATIONS/, Journal of crystal growth, 170(1-4), 1997, pp. 127-131
Authors:
ANAND S
CARLSSON SB
DEPPERT K
MONTELIUS L
SAMUELSON L
Citation: S. Anand et al., ELECTRON-TRANSPORT AT AU INP INTERFACE WITH NANOSCOPIC EXCLUSIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2794-2798
Risultati:
1-7
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