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Results: 1-17 |
Results: 17
X-RAY-ABSORPTION AT GE L-3 EDGES AS A TOOL TO INVESTIGATE GE SI(001) INTERFACES AND HETEROSTRUCTURES/
Authors: CASTRUCCI P GUNNELLA R DECRESCENZI M SACCHI M DUFOUR G ROCHET F
Citation: P. Castrucci et al., X-RAY-ABSORPTION AT GE L-3 EDGES AS A TOOL TO INVESTIGATE GE SI(001) INTERFACES AND HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1616-1620
LOCAL STRUCTURAL INVESTIGATION OF SILICON SURFACES BY ELECTRON-SCATTERING
Authors: DECRESCENZI M GUNNELLA R CASTRUCCI P DAVOLI I
Citation: M. Decrescenzi et al., LOCAL STRUCTURAL INVESTIGATION OF SILICON SURFACES BY ELECTRON-SCATTERING, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 20(7-8), 1998, pp. 991-998
SURFACTANT-MEDIATED GROWTH OF GE SI(001) INTERFACE STUDIED BY XPD/
Authors: GUNNELLA R CASTRUCCI P PINTO N CUCCULELLI P DAVOLI I SEBILLEAU D DECRESCENZI M
Citation: R. Gunnella et al., SURFACTANT-MEDIATED GROWTH OF GE SI(001) INTERFACE STUDIED BY XPD/, Surface review and letters, 5(1), 1998, pp. 157-161
EXCHANGE MECHANISMS AT THE GE SI(001) INTERFACE FROM A MULTIPLE-SCATTERING ANALYSIS OF THE GE L-3 ABSORPTION-EDGE/
Authors: CASTRUCCI P GUNNELLA R DECRESCENZI M SACCHI M DUFOUR G ROCHET F
Citation: P. Castrucci et al., EXCHANGE MECHANISMS AT THE GE SI(001) INTERFACE FROM A MULTIPLE-SCATTERING ANALYSIS OF THE GE L-3 ABSORPTION-EDGE/, Physical review. B, Condensed matter, 58(7), 1998, pp. 4095-4101
EVIDENCE OF ORDERED PHASE OF GE-SI HETEROSTRUCTURES BY X-RAY-ABSORPTION SPECTROSCOPY AT GE L-3 EDGE
Authors: CASTRUCCI P GUNNELLA R PINTO N DECRESCENZI M SACCHI M DUFOUR G ROCHET F
Citation: P. Castrucci et al., EVIDENCE OF ORDERED PHASE OF GE-SI HETEROSTRUCTURES BY X-RAY-ABSORPTION SPECTROSCOPY AT GE L-3 EDGE, Surface science, 416(3), 1998, pp. 466-471
LITHOGRAPHY AT AN INFLECTION POINT
Authors: CASTRUCCI P HENLEY W LIEBMANN W
Citation: P. Castrucci et al., LITHOGRAPHY AT AN INFLECTION POINT, Solid state technology, 40(11), 1997, pp. 127
X-RAY STANDING-WAVE STUDY OF SI GE SUPERLATTICES/
Authors: CASTRUCCI P LAGOMARSINO S CALICCHIA P CEDOLA A
Citation: P. Castrucci et al., X-RAY STANDING-WAVE STUDY OF SI GE SUPERLATTICES/, Applied surface science, 102, 1996, pp. 62-66
XPD STUDY OF ATOMIC INTERMIXING AT THE GE SI(001) INTERFACE/
Authors: DAVOLI I GUNNELLA R CASTRUCCI P PINTO N BERNARDINI R DECRESCENZI M
Citation: I. Davoli et al., XPD STUDY OF ATOMIC INTERMIXING AT THE GE SI(001) INTERFACE/, Applied surface science, 102, 1996, pp. 102-106
X-RAY PHOTOELECTRON-DIFFRACTION STUDY OF INTERMIXING AND MORPHOLOGY AT THE GE SI(001) AND GE/SB/SI(001) INTERFACE/
Authors: GUNNELLA R CASTRUCCI P PINTO N DAVOLI I SEBILLEAU D DECRESCENZI M
Citation: R. Gunnella et al., X-RAY PHOTOELECTRON-DIFFRACTION STUDY OF INTERMIXING AND MORPHOLOGY AT THE GE SI(001) AND GE/SB/SI(001) INTERFACE/, Physical review. B, Condensed matter, 54(12), 1996, pp. 8882-8891
INCIDENT BEAM EFFECTS IN AED (AUGER-ELECTRON DIFFRACTION) - THE CASE OF CU(001)
Authors: DAVOLI I GUNNELLA R CASTRUCCI P BERNARDINI R DECRESCENZI M
Citation: I. Davoli et al., INCIDENT BEAM EFFECTS IN AED (AUGER-ELECTRON DIFFRACTION) - THE CASE OF CU(001), Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 493-497
SURFACE CRYSTAL-FIELD AT THE ER SI(111) INTERFACE STUDIED BY SOFT-X-RAY LINEAR DICHROISM/
Authors: CASTRUCCI P YUBERO F VICENTIN FC VOGEL J SACCHI M
Citation: P. Castrucci et al., SURFACE CRYSTAL-FIELD AT THE ER SI(111) INTERFACE STUDIED BY SOFT-X-RAY LINEAR DICHROISM/, Physical review. B, Condensed matter, 52(19), 1995, pp. 14035-14039
RB ADSORPTION ON THE SI(001)2X1 SURFACE - AN X-RAY-STANDING-WAVES STUDY
Authors: CASTRUCCI P LAGOMARSINO S SCARINCI F FRANKLIN GE
Citation: P. Castrucci et al., RB ADSORPTION ON THE SI(001)2X1 SURFACE - AN X-RAY-STANDING-WAVES STUDY, Physical review. B, Condensed matter, 51(8), 1995, pp. 5043-5047
THE FUTURE LAB - CHANGING THE PARADIGM
Authors: CASTRUCCI P
Citation: P. Castrucci, THE FUTURE LAB - CHANGING THE PARADIGM, Solid state technology, 38(1), 1995, pp. 49
X-RAY STANDING WAVES - A POWERFUL TOOL FOR INTERFACE STUDIES
Authors: LAGOMARSINO S SCARINCI F CASTRUCCI P GIANNINI C
Citation: S. Lagomarsino et al., X-RAY STANDING WAVES - A POWERFUL TOOL FOR INTERFACE STUDIES, Acta Physica Polonica. A, 86(4), 1994, pp. 553-566
ANGULAR-DEPENDENCE OF THE EXFAS (EXTENDED FINE AUGER STRUCTURE) IN MGO(100) SURFACES - SHORT-RANGE ORDER VERSUS DIFFRACTION EFFECTS
Authors: DAVOLI I BERNARDINI R BATTISTONI C CASTRUCCI P GUNNELLA R DECRESCENZI M
Citation: I. Davoli et al., ANGULAR-DEPENDENCE OF THE EXFAS (EXTENDED FINE AUGER STRUCTURE) IN MGO(100) SURFACES - SHORT-RANGE ORDER VERSUS DIFFRACTION EFFECTS, Surface science, 306(1-2), 1994, pp. 144-154
MULTISITE OCCUPANCY AT THE ALKALI SILICON(111) INTERFACE STUDIED WITHXSW
Authors: CASTRUCCI P LAGOMARSINO S SCARINCI F GIANNINI C
Citation: P. Castrucci et al., MULTISITE OCCUPANCY AT THE ALKALI SILICON(111) INTERFACE STUDIED WITHXSW, Journal of physics. D, Applied physics, 26(4A), 1993, pp. 192-196
APPLICATION OF THE BORRMANN EFFECT TO X-RAY MONOCHROMATIZATION AND TOTHE OVERLAYER VERSUS SUBSTRATE SIGNAL-RATIO ENHANCEMENT
Authors: LAGOMARSINO S STEFANI G CASTRUCCI P LETARDI P SCARINCI F SAVELLI G TEBANO A
Citation: S. Lagomarsino et al., APPLICATION OF THE BORRMANN EFFECT TO X-RAY MONOCHROMATIZATION AND TOTHE OVERLAYER VERSUS SUBSTRATE SIGNAL-RATIO ENHANCEMENT, Physical review. B, Condensed matter, 45(12), 1992, pp. 6953-6956
Risultati: 1-17 |