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Results: 1-8 |
Results: 8
MARKED ELEVATION OF MYOCARDIAL TRACE-ELEMENTS IN IDIOPATHIC DILATED CARDIOMYOPATHY COMPARED TO SECONDARY CARDIAC DYSFUNCTION
Authors: FRUSTACI A MAGNAVITA N CHIMENTI C CALDARULO M SABBIONI E PIETRA R CELLINI C SANTORO T POSSATI GF
Citation: A. Frustaci et al., MARKED ELEVATION OF MYOCARDIAL TRACE-ELEMENTS IN IDIOPATHIC DILATED CARDIOMYOPATHY COMPARED TO SECONDARY CARDIAC DYSFUNCTION, Circulation, 98(17), 1998, pp. 2664-2664
RBS-CHANNELING DETERMINATION OF DAMAGE PROFILES IN FULLY RELAXED SI0.76GE0.24 IMPLANTED WITH 2 MEV SI IONS
Authors: BIANCONI M LULLI G SPALLACCI F ALBERTAZZI E NIPOTI R CARNERA A CELLINI C
Citation: M. Bianconi et al., RBS-CHANNELING DETERMINATION OF DAMAGE PROFILES IN FULLY RELAXED SI0.76GE0.24 IMPLANTED WITH 2 MEV SI IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(4), 1997, pp. 689-695
THE HYDROPHOBIC TRAM PROTEIN OF PKM101 IS REQUIRED FOR CONJUGAL TRANSFER AND SENSITIVITY TO DONOR-SPECIFIC BACTERIOPHAGE
Authors: CELLINI C KALOGERAKI VS WINANS SC
Citation: C. Cellini et al., THE HYDROPHOBIC TRAM PROTEIN OF PKM101 IS REQUIRED FOR CONJUGAL TRANSFER AND SENSITIVITY TO DONOR-SPECIFIC BACTERIOPHAGE, Plasmid, 37(3), 1997, pp. 181-188
STOPPING AND DAMAGE PARAMETERS FOR MONTE-CARLO SIMULATION OF MEV IMPLANTS IN CRYSTALLINE SI
Authors: LULLI G ALBERTAZZI E BIANCONI M NIPOTI R CERVERA M CAMERA A CELLINI C
Citation: G. Lulli et al., STOPPING AND DAMAGE PARAMETERS FOR MONTE-CARLO SIMULATION OF MEV IMPLANTS IN CRYSTALLINE SI, Journal of applied physics, 82(12), 1997, pp. 5958-5964
DAMAGE PROFILES IN AS-IMPLANTED SILICON - FLUENCE DEPENDENCE
Authors: NIPOTI R LULLI G MILITA S SERVIDORI M CELLINI C CARNERA A
Citation: R. Nipoti et al., DAMAGE PROFILES IN AS-IMPLANTED SILICON - FLUENCE DEPENDENCE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 148-151
DYNAMIC MONTE-CARLO SIMULATION OF NONLINEAR DAMAGE GROWTH DURING ION-IMPLANTATION OF CRYSTALLINE SILICON
Authors: ALBERTAZZI E BIANCONI M LULLI G NIPOTI R CARNERA A CELLINI C
Citation: E. Albertazzi et al., DYNAMIC MONTE-CARLO SIMULATION OF NONLINEAR DAMAGE GROWTH DURING ION-IMPLANTATION OF CRYSTALLINE SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 152-155
HIGH-TEMPERATURE ANNEALINGS OF SB AND SB B HEAVILY IMPLANTED SILICON-WAFERS STUDIED BY NEAR GRAZING-INCIDENCE FLUORESCENCE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE/
Authors: REVENANTBRIZARD C REGNARD JR SOLMI S ARMIGLIATO A VALMORRI S CELLINI C ROMANATO F
Citation: C. Revenantbrizard et al., HIGH-TEMPERATURE ANNEALINGS OF SB AND SB B HEAVILY IMPLANTED SILICON-WAFERS STUDIED BY NEAR GRAZING-INCIDENCE FLUORESCENCE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE/, Journal of applied physics, 79(12), 1996, pp. 9037-9042
PRE-AMORPHIZATION DAMAGE STUDY IN AS-IMPLANTED SILICON
Authors: CELLINI C CARNERA A BERTI M GASPAROTTO A STEER D SERVIDORI M MILITA S
Citation: C. Cellini et al., PRE-AMORPHIZATION DAMAGE STUDY IN AS-IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 227-231
Risultati: 1-8 |