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Results: 1-9 |
Results: 9

Authors: WANG TH CHIANG LP ZOUS NK CHANG TE HUANG C
Citation: Th. Wang et al., CHARACTERIZATION OF VARIOUS STRESS-INDUCED OXIDE TRAPS IN MOSFETS BY USING A SUBTHRESHOLD TRANSIENT CURRENT TECHNIQUE, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1791-1796

Authors: WANG TH CHANG TE CHIANG LP WANG CH ZOUS NK HUANG CM
Citation: Th. Wang et al., INVESTIGATION OF OXIDE CHARGE TRAPPING AND DETRAPPING IN A MOSFET BY USING A GIDL CURRENT TECHNIQUE, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1511-1517

Authors: CHIANG LP ZOUS NK WANG TH CHANG TE SHEN KY HUANG C
Citation: Lp. Chiang et al., FIELD AND TEMPERATURE EFFECTS ON OXIDE CHARGE DETRAPPING IN A METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BY MEASURING A SUBTHRESHOLDCURRENT TRANSIENT, Applied physics letters, 71(8), 1997, pp. 1068-1070

Authors: WANG TH CHANG TE CHIANG LP HUANG C
Citation: Th. Wang et al., A NEW TECHNIQUE TO EXTRACT OXIDE TRAP TIME CONSTANTS IN MOSFETS, IEEE electron device letters, 17(8), 1996, pp. 398-400

Authors: WANG TH CHANG TE HUANG CM YANG JY CHANG KM CHIANG LP
Citation: Th. Wang et al., STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETS, IEEE electron device letters, 16(12), 1995, pp. 566-568

Authors: KRISHNASAMY S CHANG TE WANG WY MAKAROFF CA
Citation: S. Krishnasamy et al., ISOLATION AND CHARACTERIZATION OF A NUCLEAR GENE ENCODING MITOCHONDRIAL MALATE-DEHYDROGENASE FROM A UNICELLULAR ALGA CHLAMYDOMONAS-REINHARDTII, Plant physiology, 108(2), 1995, pp. 75-75

Authors: CHANG TE HUANG CM WANG TH
Citation: Te. Chang et al., MECHANISMS OF INTERFACE TRAP-INDUCED DRAIN LEAKAGE CURRENT IN OFF-STATE N-MOSFETS, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 738-743

Authors: WANG TH HUANG CM CHOU PC CHUNG SSS CHANG TE
Citation: Th. Wang et al., EFFECTS OF HOT-CARRIER-INDUCED INTERFACE STATE GENERATION IN SUBMICRON LDD MOSFETS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1618-1622

Authors: WANG TH HUANG CM CHANG TE CHOU JW CHANG CY
Citation: Th. Wang et al., INTERFACE-TRAP EFFECT ON GATE INDUCED DRAIN LEAKAGE CURRENT IN SUBMICRON N-MOSFETS, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2475-2477
Risultati: 1-9 |