AAAAAA
Results:
1-15
|
Results: 15
Authors:
CHANGLIAO KS
CHEN CH
Citation: Ks. Changliao et Ch. Chen, IMPROVED BLOCKING VOLTAGE IN DIODE WITH NEUTRON-TRANSMUTATION-DOPED SILICON BY FIELD OXIDE ANNEALED IN N2O, JPN J A P 1, 37(6A), 1998, pp. 3278-3279
EFFECTS OF ARSENIC CONCENTRATION IN GATE OXIDE ON ELECTRICAL-PROPERTIES OF METAL-OXIDE-SI CAPACITORS
Authors:
CHANGLIAO KS
CHEN CH
Citation: Ks. Changliao et Ch. Chen, EFFECTS OF ARSENIC CONCENTRATION IN GATE OXIDE ON ELECTRICAL-PROPERTIES OF METAL-OXIDE-SI CAPACITORS, JPN J A P 2, 37(10B), 1998, pp. 1224-1226
Authors:
CHANGLIAO KS
LAI HC
Citation: Ks. Changliao et Hc. Lai, EXISTENCE OF OPTIMAL N2O NITRIDATION TEMPERATURE AND TIME FOR HOT-ELECTRON HARDNESS ENHANCEMENT IN METAL-OXIDE-SI CAPACITORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 250-252
Authors:
CHANGLIAO KS
TZENG PJ
Citation: Ks. Changliao et Pj. Tzeng, BORON PENETRATION REDUCTION AND FN STRESS HARDNESS IMPROVEMENT IN MOSCAPACITORS BY GATE OXIDES RAPID-THERMAL-ANNEALED IN N2O, Solid-state electronics, 42(3), 1998, pp. 425-427
Authors:
CHANGLIAO KS
FENG KH
Citation: Ks. Changliao et Kh. Feng, RADIATION HARDNESS OF STATIC RANDOM-ACCESS-MEMORY TESTED USING DOSE-TO-FAILURE AND GAMMA-RAY EXPOSURE, IEEE transactions on reliability, 47(2), 1998, pp. 155-158
Authors:
CHANGLIAO KS
LAI HC
Citation: Ks. Changliao et Hc. Lai, CORRELATION BETWEEN NITROGEN CONCENTRATION PROFILE AND INFRARED-SPECTROSCOPY IN SILICON DIOXIDE, Applied physics letters, 72(18), 1998, pp. 2280-2282
Authors:
CHANGLIAO KS
CHEN LC
Citation: Ks. Changliao et Lc. Chen, METAL-OXIDE-SI CAPACITORS HOT-ELECTRON AND RADIATION HARDNESS IMPROVEMENT BY GATE ELECTRODES DEPOSITED USING AMORPHOUS SI AND GATE OXIDES RAPID THERMAL ANNEALED IN N2O, JPN J A P 2, 36(5B), 1997, pp. 604-606
Authors:
CHANGLIAO KS
TZENG PJ
Citation: Ks. Changliao et Pj. Tzeng, REDUCTION OF PLASMA-ETCHING INDUCED ELECTRICAL DEGRADATION IN METAL-OXIDE-SI CAPACITORS BY FURNACE GROWN OXIDES RAPID THERMAL ANNEALED IN N2O, JPN J A P 2, 36(12A), 1997, pp. 1580-1582
Authors:
CHANGLIAO KS
CHEN LC
Citation: Ks. Changliao et Lc. Chen, PHYSICAL AND ELECTRICAL-PROPERTIES IN METAL-OXIDE-SI CAPACITORS WITH VARIOUS GATE ELECTRODES AND GATE OXIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 942-947
Authors:
CHANGLIAO KS
CHEN LC
Citation: Ks. Changliao et Lc. Chen, SILICON DIOXIDE SILICON INTERFACIAL STRAIN ANALYZED BY INFRARED-SPECTROSCOPY, Surface & coatings technology, 94-5(1-3), 1997, pp. 379-382
Authors:
CHANGLIAO KS
WU TL
Citation: Ks. Changliao et Tl. Wu, RADIATION DOSIMETERS FOR HIGH-DOSE BY COMMERCIAL PMOS TRANSISTORS USING NORMALIZED DRAIN CURRENT AS DOSIMETRIC PARAMETER, Journal of Nuclear Science and Technology, 34(10), 1997, pp. 992-995
Authors:
CHANGLIAO KS
LAN TY
Citation: Ks. Changliao et Ty. Lan, IMPROVEMENT OF HOT-ELECTRON HARDNESS IN METAL-OXIDE-SEMICONDUCTOR DEVICES BY COMBINATION OF GATE ELECTRODE DEPOSITED USING AMORPHOUS SI ANDGATE OXIDE GROWN IN N2O, JPN J A P 2, 35(8A), 1996, pp. 968-970
Authors:
CHANGLIAO KS
HUANG CJ
Citation: Ks. Changliao et Cj. Huang, ANNEAL TECHNIQUE TO RECOVER THE ELECTRICAL CHARACTERISTICS OF THE PACKAGED BIPOLAR JUNCTION TRANSISTORS DAMAGED BY CO-60 RADIATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1377-1383
Authors:
CHANGLIAO KS
HWU JG
Citation: Ks. Changliao et Jg. Hwu, IMPROVEMENT OF HOT-CARRIER AND RADIATION HARDNESSES IN METAL-OXIDE-NITRIDE-OXIDE SEMICONDUCTOR-DEVICES BY IRRADIATION-THEN-ANNEAL TREATMENTS, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 612-614
Authors:
CHANGLIAO KS
CHUANG CC
Citation: Ks. Changliao et Cc. Chuang, IMPROVEMENT OF RADIATION HARDNESS IN POLY-SI GATE MOS CAPACITOR BY USE OF AMORPHOUS-SI, Electronics Letters, 30(18), 1994, pp. 1540-1542
Risultati:
1-15
|