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Results: 1-25 | 26-39 |
Results: 26-39/39
THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS
Authors: LIN YH LEE CL LEI TF CHAO TS
Citation: Yh. Lin et al., THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS, IEEE electron device letters, 16(5), 1995, pp. 164-165
POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDE
Authors: LAI CS LEI TF LEE CL CHAO TS
Citation: Cs. Lai et al., POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDE, IEEE electron device letters, 16(11), 1995, pp. 470-472
INHIBITION OF BIRDS BEAK IN LOCOS BY NEW BUFFER N2O OXIDE
Authors: CHAO TS CHENG JY LEI TF
Citation: Ts. Chao et al., INHIBITION OF BIRDS BEAK IN LOCOS BY NEW BUFFER N2O OXIDE, Electronics Letters, 31(4), 1995, pp. 323-324
PARTICLE CONTAMINATIONS IN LPCVD POLYSILICON
Authors: CHEN WH CHAO TS LIU YN CHOU KS LEI TF
Citation: Wh. Chen et al., PARTICLE CONTAMINATIONS IN LPCVD POLYSILICON, Electronics Letters, 31(3), 1995, pp. 239-241
CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O
Authors: CHAO TS LEI TF
Citation: Ts. Chao et Tf. Lei, CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O, Journal of the Electrochemical Society, 142(3), 1995, pp. 34-35
A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH
Authors: CHENG JY LEI TF CHAO TS
Citation: Jy. Cheng et al., A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH, Journal of the Electrochemical Society, 142(10), 1995, pp. 187-188
MEASUREMENT OF THIN OXIDE-FILMS ON IMPLANTED SI-SUBSTRATE BY ELLIPSOMETRY
Authors: CHAO TS LEI TF CHANG CY LEE CL
Citation: Ts. Chao et al., MEASUREMENT OF THIN OXIDE-FILMS ON IMPLANTED SI-SUBSTRATE BY ELLIPSOMETRY, JPN J A P 1, 33(4A), 1994, pp. 2031-2034
SUPERIOR DAMAGE-IMMUNITY OF THIN OXIDES THERMALLY GROWN ON REACTIVE-ION-ETCHED SILICON SURFACE IN N2O AMBIENT
Authors: UENG SY CHAO TS WANG PJ CHEN WH CHANG DC CHENG HC
Citation: Sy. Ueng et al., SUPERIOR DAMAGE-IMMUNITY OF THIN OXIDES THERMALLY GROWN ON REACTIVE-ION-ETCHED SILICON SURFACE IN N2O AMBIENT, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 850-851
MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICON
Authors: CHAO TS LEE CL LEI TF
Citation: Ts. Chao et al., MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICON, Journal of the Electrochemical Society, 141(8), 1994, pp. 2146-2151
THE REFRACTIVE-INDEX OF INP AND ITS OXIDE MEASURED BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY
Authors: CHAO TS LEE CL LEI TF
Citation: Ts. Chao et al., THE REFRACTIVE-INDEX OF INP AND ITS OXIDE MEASURED BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY, Journal of materials science letters, 12(10), 1993, pp. 721-723
THICKNESS DETERMINATION OF POLY-SI POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER/
Authors: CHAO TS LEE CL LEI TF
Citation: Ts. Chao et al., THICKNESS DETERMINATION OF POLY-SI POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER/, Electronics Letters, 29(13), 1993, pp. 1157-1159
CHARACTERIZATION OF SEMIINSULATING POLYCRYSTALLINE SILICON PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
Authors: CHAO TS LEE CL LEI TF
Citation: Ts. Chao et al., CHARACTERIZATION OF SEMIINSULATING POLYCRYSTALLINE SILICON PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 140(9), 1993, pp. 2645-2648
AN EXOTHERMIC PHENOMENON OF SILICON OXIDATION BY N2O
Authors: CHAO TS CHEN WH SUN SC CHANG HY
Citation: Ts. Chao et al., AN EXOTHERMIC PHENOMENON OF SILICON OXIDATION BY N2O, Journal of the Electrochemical Society, 140(11), 1993, pp. 120000160-120000161
CHARACTERIZATIONS OF OXIDE GROWN BY N2O
Authors: CHAO TS CHEN WH SUN SC CHANG HY
Citation: Ts. Chao et al., CHARACTERIZATIONS OF OXIDE GROWN BY N2O, Journal of the Electrochemical Society, 140(10), 1993, pp. 2905-2907
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