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Results: 1-7 |
Results: 7
POWER MOS DEVICES - STRUCTURE EVOLUTIONS AND MODELING APPROACHES
Authors: ROSSEL P TRANDUC H CHARITAT G
Citation: P. Rossel et al., POWER MOS DEVICES - STRUCTURE EVOLUTIONS AND MODELING APPROACHES, Microelectronics and reliability, 37(9), 1997, pp. 1375-1388
SPIRAL JUNCTION TERMINATION
Authors: KRIZAJ D AMON S MINGUES C CHARITAT G
Citation: D. Krizaj et al., SPIRAL JUNCTION TERMINATION, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2002-2010
A NEW ANALYTICAL MODEL FOR DETERMINATION OF BREAKDOWN VOLTAGE OF RESURF STRUCTURES
Authors: KRIZAJ D CHARITAT G AMON S
Citation: D. Krizaj et al., A NEW ANALYTICAL MODEL FOR DETERMINATION OF BREAKDOWN VOLTAGE OF RESURF STRUCTURES, Solid-state electronics, 39(9), 1996, pp. 1353-1358
MODELING AND IMPROVING THE ON-RESISTANCE OF LDMOS RESURF DEVICES
Authors: CHARITAT G BOUANANE MA AUSTIN P ROSSEL P
Citation: G. Charitat et al., MODELING AND IMPROVING THE ON-RESISTANCE OF LDMOS RESURF DEVICES, Microelectronics, 27(2-3), 1996, pp. 181-190
SUBTHRESHOLD LATCH-UP IN MOS THYRISTOR AN D MCT DEVICES
Authors: SANCHEZ JL TRANDUC H ROSSEL P CHARITAT G BEHRENS FH
Citation: Jl. Sanchez et al., SUBTHRESHOLD LATCH-UP IN MOS THYRISTOR AN D MCT DEVICES, Journal de physique. III, 5(1), 1995, pp. 11-32
PERFORMANCE OF SIC POWER MOSFETS - ON RES ISTANCE VERSUS VOLTAGE CAPABILITY AND SWITCHING SPEED
Authors: BEYDOUN B ROSSEL P TRANDUC H CHARITAT G
Citation: B. Beydoun et al., PERFORMANCE OF SIC POWER MOSFETS - ON RES ISTANCE VERSUS VOLTAGE CAPABILITY AND SWITCHING SPEED, Journal de physique. III, 4(8), 1994, pp. 1383-1396
POWER 2D - A DEDICATED TOOL FOR 2-DIMENSIONAL SIMULATIONS OF OFF-STATE POWER STRUCTURES
Authors: NOLHIER N STEFANOV E CHARITAT G ROSSEL P
Citation: N. Nolhier et al., POWER 2D - A DEDICATED TOOL FOR 2-DIMENSIONAL SIMULATIONS OF OFF-STATE POWER STRUCTURES, Compel, 13(4), 1994, pp. 771-783
Risultati: 1-7 |