Authors: CLOITRE T SANCHEZ S CHERGUI A HONERLAGUE B AULOMBARD RL

Citation: T. Cloitre et al., ZNCDSE-ZNSE HETEROSTRUCTURES GROWN BY MOVPE, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 16-20

Authors: MANAR A CHERGUI A GUENNANI D OHLMANN D CLOITRE T AULOMBARD RL

Citation: A. Manar et al., CHARACTERISTIC EXCITON PROPERTIES OF ZNS AND ZNSE FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 121-125

Authors: ROBINO M CHERGUI A DEISS JL LOISON JL VOLA JP

Citation: M. Robino et al., STRUCTURAL AND MORPHOLOGICAL CHARACTERIZA TION OF THIN EPITAXIAL LAYERS OF ZNSE DEPOSITED ON GAAS, Journal de physique. IV, 6(C4), 1996, pp. 441-449

Authors: CHERGUI A DEISS JL GRUN JB LOISON JL ROBINO M BESERMAN R

Citation: A. Chergui et al., STRUCTURAL AND OPTICAL CHARACTERISTICS OF PULSED-LASER DEPOSITED ZNSEEPILAYERS, Applied surface science, 96-8, 1996, pp. 874-880

Authors: DEISS JL CHERGUI A KOUTTI L LOISON JL ROBINO M GRUN JB

Citation: Jl. Deiss et al., PULSED-LASER DEPOSITION OF EPITAXIAL LAYERS OF ZNSE, Applied surface science, 86(1-4), 1995, pp. 149-153

Authors: CHERGUI A VALENTA J LOISON JL ROBINO M PELANT I GRUN JB LEVY R BRIOT O AULOMBARD RL

Citation: A. Chergui et al., OPTICAL CHARACTERIZATION OF PURE ZNSE EPILAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Semiconductor science and technology, 9(11), 1994, pp. 2073-2079