Authors:
MCATEE CP
LIM MY
FUNG K
VELLIGAN M
FRY K
CHOW TP
BERG DE
Citation: Cp. Mcatee et al., CHARACTERIZATION OF A HELICOBACTER-PYLORI VACCINE CANDIDATE BY PROTEOME TECHNIQUES, Journal of chromatography B. Biomedical sciences and applications, 714(2), 1998, pp. 325-333
Citation: V. Khemka et al., EFFECT OF REACTIVE ION ETCH-INDUCED DAMAGE ON THE PERFORMANCE OF 4H-SIC SCHOTTKY-BARRIER DIODES, Journal of electronic materials, 27(10), 1998, pp. 1128-1135
Authors:
RAMUNGUL N
KHEMKA V
TYAGI R
CHOW TP
GHEZZO M
NEUDECK PG
KRETCHMER J
HENNESSY W
BROWN DM
Citation: N. Ramungul et al., COMPARISON OF ALUMINUM-IMPLANTED AND BORON-IMPLANTED VERTICAL 6H-SIC P+N JUNCTION DIODES, Solid-state electronics, 42(1), 1998, pp. 17-22
Citation: Yz. Hu et al., SILICON-NITRIDE CHEMICAL-MECHANICAL POLISHING MECHANISMS, Journal of the Electrochemical Society, 145(11), 1998, pp. 3919-3925
Authors:
HU YZ
GUTMANN RJ
CHOW TP
BUSSMANN K
CHENG SF
PRINZ GA
Citation: Yz. Hu et al., CHEMICAL-MECHANICAL POLISHING AS AN ENABLING TECHNOLOGY FOR GIANT MAGNETORESISTANCE DEVICES, Thin solid films, 308, 1997, pp. 555-561
Citation: V. Khemka et Tp. Chow, THERMAL-OXIDATION OF (100)SILICON IN O-2 AND CO2 AND IN EFFECT ON THESIO2-SI METAL-OXIDE-SEMICONDUCTOR PARAMETERS, Journal of the Electrochemical Society, 144(3), 1997, pp. 1137-1143
Citation: V. Parthasarathy et al., 500-V, N-CHANNEL ATOMIC LATTICE LAYOUT (ALL) IGBT WITH SUPERIOR LATCHING IMMUNITY, IEEE electron device letters, 16(7), 1995, pp. 325-327
Citation: V. Parthasarathy et al., A 550-V ISOLATED CHANNEL BASE RESISTANCE CONTROLLED THYRISTOR (ICBRT), IEEE electron device letters, 16(6), 1995, pp. 283-285
Authors:
GUTMANN RJ
CHOW TP
LAKSHMINARAYANAN S
PRICE DT
STEIGERWALD JM
YOU L
MURARKA SP
Citation: Rj. Gutmann et al., INTEGRATION OF COPPER MULTILEVEL INTERCONNECTS WITH OXIDE AND POLYMERINTERLEVEL DIELECTRICS, Thin solid films, 270(1-2), 1995, pp. 472-479
Citation: Rc. Demeo et Tp. Chow, THERMAL-OXIDATION KINETICS OF (100)SILICON AND (111)SILICON IN NITROUS-OXIDE, Applied physics letters, 67(4), 1995, pp. 500-502
Authors:
LAKSHMINARAYANAN S
STEIGERWALD J
PRICE DT
BOURGEOIS M
CHOW TP
GUTMANN RJ
MURARKA SP
Citation: S. Lakshminarayanan et al., CONTACT AND VIA STRUCTURES WITH COPPER INTERCONNECTS FABRICATED USINGDUAL DAMASCENE TECHNOLOGY, IEEE electron device letters, 15(8), 1994, pp. 307-309
Citation: A. Bhalla et Tp. Chow, 550-V, N-CHANNEL EMITTER SWITCHED THYRISTORS WITH AN ATOMIC-LATTICE-LAYOUT (ALL) GEOMETRY, IEEE electron device letters, 15(11), 1994, pp. 452-454
Citation: Tp. Chow et R. Tyagi, WIDE BANDGAP COMPOUND SEMICONDUCTORS FOR SUPERIOR HIGH-VOLTAGE UNIPOLAR POWER DEVICES, I.E.E.E. transactions on electron devices, 41(8), 1994, pp. 1481-1483
Citation: R. Tyagi et al., AN ISOPLANAR ISOLATION TECHNOLOGY FOR SIC DEVICES USING LOCAL OXIDATION, Journal of the Electrochemical Society, 141(8), 1994, pp. 2188-2191