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Results: 1-25/33
Authors:
GIRGINOUDI D
THANAILAKIS A
GEORGOULAS N
KASABYAN V
CHRISTOU A
Citation: D. Girginoudi et al., 2-DIMENSIONAL CLUSTERS IN SIGE SI HETEROSTRUCTURES AND THEIR EFFECT ON FIELD-EFFECT TRANSISTOR TRANSPORT CHARACTERISTICS/, Superlattices and microstructures, 23(2), 1998, pp. 407-411
Authors:
SANDLER A
FOX S
MEYERS T
CHRISTOU A
WEBER G
GONIN R
LOEHRER PJ
EINHORN LH
DREICER R
Citation: A. Sandler et al., PACLITAXEL PLUS GALLIUM NITRATE AND FILGRASTIM IN PATIENTS WITH REFRACTORY MALIGNANCIES - A PHASE-I TRIAL, American journal of clinical oncology, 21(2), 1998, pp. 180-184
Authors:
CHRISTOU A
MANTRANGOU C
YUPSANIS T
Citation: A. Christou et al., SIMILARITIES AND DIFFERENCES IN THE PROPERTIES OF ALFALFA ENDONUCLEASES, Journal of plant physiology, 153(1-2), 1998, pp. 16-24
Authors:
LAGADAS M
CALAMIOTOU M
ANDROULIDAKI M
HATZOPOULOS Z
CHRISTOU A
Citation: M. Lagadas et al., LATTICE MISMATCH AND CONDUCTIVITY IN LTALGAAS LAYERS, Microelectronic engineering, 43-4, 1998, pp. 575-580
Authors:
STRIFAS N
PANAYOTATOS P
CHRISTOU A
Citation: N. Strifas et al., OPTICAL INTERCONNECT RELIABILITY, Optical engineering, 37(8), 1998, pp. 2416-2418
Authors:
FENG T
DIMOULAS A
CHRISTOU A
LAGADAS M
HATZOPOULO Z
Citation: T. Feng et al., ENHANCEMENT OF 2D GROWTH OF MBE HETEROSTRUCTURES USING LASER-ASSISTEDMBE TECHNIQUES, Thin solid films, 318(1-2), 1998, pp. 22-28
Authors:
FENG T
STRIFAS N
CHRISTOU A
Citation: T. Feng et al., DEGRADATION OF PERFORMANCE IN MESFETS AND HEMTS - SIMULATION AND MEASUREMENT OF RELIABILITY, Microelectronics and reliability, 38(6-8), 1998, pp. 1239-1244
Authors:
ESSER RH
DIMOULAS A
STRIFAS N
CHRISTOU A
PAPANICOLAU N
Citation: Rh. Esser et al., MATERIALS INTERFACES IN FLIP-CHIP INTERCONNECTS FOR OPTICAL-COMPONENTS - PERFORMANCE AND DEGRADATION MECHANISMS, Microelectronics and reliability, 38(6-8), 1998, pp. 1307-1312
Authors:
KRISHNAN MS
GOLDSMAN N
CHRISTOU A
Citation: Ms. Krishnan et al., TRANSPORT SIMULATION OF BULK ALXGA1-XN AND THE 2-DIMENSIONAL ELECTRON-GAS AT THE ALXGA1-XN GAN INTERFACE/, Journal of applied physics, 83(11), 1998, pp. 5896-5903
Authors:
LAGADAS M
HATZOPOULOS Z
KORNILIOS N
ANDROULIDAKI M
CHRISTOU A
PANAYOTATOS P
Citation: M. Lagadas et al., ELECTRICAL-PROPERTIES OF N-GAAS EPILAYERS, FET AND HEMT STRUCTURES GROWN ON LT-GAAS BY MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 355-358
Authors:
FENG T
DIMOULAS A
CHRISTOU A
CONSTANTINIDIS G
HATZOPOULOS Z
Citation: T. Feng et al., FAILURE MECHANISMS OF GAAS-MESFETS WITH CU REFRACTORY METALLIZED GATES/, Microelectronics and reliability, 37(10-11), 1997, pp. 1699-1702
Authors:
PAPASTAMATIOU M
ARPATZANIS N
PAPAIOANNOU GJ
PAPASTERGIOU C
CHRISTOU A
Citation: M. Papastamatiou et al., NEUTRON RADIATION EFFECTS IN HIGH-ELECTRON-MOBILITY TRANSISTORS, I.E.E.E. transactions on electron devices, 44(3), 1997, pp. 364-372
Authors:
YOUNG D
CHRISTOU A
RAMESH R
FORK DK
KRUSOR B
Citation: D. Young et al., GROWTH OF (001) ORIENTED LA-SR-CO-O PB-LA-ZR-TI-O/LA-SR-CO-O FERROELECTRIC CAPACITORS ON (001)GAAS WITH A MGO BUFFER LAYER/, Integrated ferroelectrics, 12(1), 1996, pp. 63-69
Authors:
PUSARLA C
LIN L
CHRISTOU A
Citation: C. Pusarla et al., RELIABILITY ISSUES IN HYBRID OPTOELECTRONIC INTERCONNECT SYSTEMS, Quality and reliability engineering international, 12(4), 1996, pp. 329-334
Authors:
SHU LH
CHRISTOU A
BARBE DF
Citation: Lh. Shu et al., HIGH-TEMPERATURE DEVICE SIMULATION AND THERMAL-CHARACTERISTICS OF GAAS-MESFETS ON CVD DIAMOND SUBSTRATES, Microelectronics and reliability, 36(9), 1996, pp. 1177-1189
Authors:
LAGADAS M
HATZOPOULOS Z
TSAGARAKI K
CALAMIOTOU M
LIOUTAS C
CHRISTOU A
Citation: M. Lagadas et al., THE EFFECT OF ARSENIC OVERPRESSURE ON THE STRUCTURAL-PROPERTIES GAAS GROWN AT LOW-TEMPERATURE, Journal of applied physics, 80(8), 1996, pp. 4377-4383
Authors:
HUANG CP
CHRISTOU A
Citation: Cp. Huang et A. Christou, DIFFUSION-CONTROLLED DEGRADATION ANALYSIS OF HIGH-TEMPERATURE (BI,SB)(2)(TE,SE)(3) SEMICONDUCTOR THERMOELECTRIC-POWER MODULES, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 233-236
Authors:
PAPAIOANNOU GJ
PAPASTAMATIOU MJ
CHRISTOU A
Citation: Gj. Papaioannou et al., HE ION RADIATION EFFECTS IN HIGH-ELECTRON-MOBILITY TRANSISTORS, Journal of applied physics, 78(5), 1995, pp. 3066-3076
Authors:
GUAN L
CHRISTOU A
HALKIAS G
BARBE DF
Citation: L. Guan et al., MODELING OF CURRENT-VOLTAGE CHARACTERISTICS FOR STRAINED AND LATTICE-MATCHED HEMTS ON INP SUBSTRATE USING A VARIATIONAL CHARGE CONTROL MODEL, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 612-617
Authors:
PEIRO F
CORNET A
MORANTE JR
GEORGAKILAS A
WOOD C
CHRISTOU A
Citation: F. Peiro et al., QUANTUM WIRE-LIKE INDUCED MORPHOLOGY IN INGAAS WELLS GROWN ON INYAL1-YAS TENSILE BUFFER LAYERS OVER (100)INP VICINAL SURFACES, Applied physics letters, 66(18), 1995, pp. 2391-2393
Authors:
YALAMANCHILI P
CHRISTOU A
MARTELL S
RUST C
Citation: P. Yalamanchili et al., C-SAM SOUNDS THE WARNING FOR IC PACKAGING DEFECTS, IEEE circuits and devices magazine, 10(4), 1994, pp. 36-41
Authors:
PEIRO F
CORNET A
MORANTE JR
GEORGAKILAS A
CHRISTOU A
Citation: F. Peiro et al., CONTRAST MODULATIONS IN INALAS INP, Journal of electronic materials, 23(9), 1994, pp. 969-974
Authors:
GEORGAKILAS A
CHRISTOU A
ZEKENTES K
MERCY JM
KONCZEWICZ LK
VILA A
CORNET A
Citation: A. Georgakilas et al., ELECTRICAL-TRANSPORT QUANTUM EFFECTS IN THE IN0.53GA0.47AS IN0.52AL0.48AS HETEROSTRUCTURE ON SILICON/, Journal of applied physics, 76(3), 1994, pp. 1948-1952
Authors:
GEORGAKILAS A
CHRISTOU A
Citation: A. Georgakilas et A. Christou, EFFECTS OF INGAAS GAAS STRAINED-LAYER SUPERLATTICES IN OPTIMIZED MOLECULAR-BEAM-EPITAXY GAAS AN SI WITH SI BUFFER LAYERS/, Journal of applied physics, 76(11), 1994, pp. 7332-7338
Authors:
ALSHEIKHLY M
CHRISTOU A
Citation: M. Alsheikhly et A. Christou, HOW RADIATION AFFECTS POLYMERIC MATERIALS, IEEE transactions on reliability, 43(4), 1994, pp. 551-556