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Results: 1-25 | 26-50 | 51-67
Results: 1-25/67
OBSERVATION OF OPTICALLY-ACTIVE METASTABLE DEFECTS IN UNDOPED GAN EPILAYERS
Authors: XU SJ CHUA SJ WANG XC WANG W
Citation: Sj. Xu et al., OBSERVATION OF OPTICALLY-ACTIVE METASTABLE DEFECTS IN UNDOPED GAN EPILAYERS, Applied physics letters, 72(19), 1998, pp. 2451-2453
INDIUM INCORPORATION COEFFICIENTS IN THE GROWTH OF ALINGAAS AL0.3GA0.7AS QUANTUM-WELLS BY MOLECULAR-BEAM EPITAXY/
Authors: CHUA SJ ZHANG ZH
Citation: Sj. Chua et Zh. Zhang, INDIUM INCORPORATION COEFFICIENTS IN THE GROWTH OF ALINGAAS AL0.3GA0.7AS QUANTUM-WELLS BY MOLECULAR-BEAM EPITAXY/, JPN J A P 1, 37(6A), 1998, pp. 3280-3281
SYNTHESIS OF OXADIAZOL-2-YL)-2,5-DIALKOXYBENZENE-OLIGOTHIOPHENE COPOLYMERS WITH DIFFERENT EMISSIVE COLORS - SYNTHETICALLY TUNING THE PHOTOLUMINESCENCE OF CONJUGATED POLYMERS
Authors: YU WL MENG H PEI J LAI YH CHUA SJ HUANG W
Citation: Wl. Yu et al., SYNTHESIS OF OXADIAZOL-2-YL)-2,5-DIALKOXYBENZENE-OLIGOTHIOPHENE COPOLYMERS WITH DIFFERENT EMISSIVE COLORS - SYNTHETICALLY TUNING THE PHOTOLUMINESCENCE OF CONJUGATED POLYMERS, Chemical communications, (18), 1998, pp. 1957-1958
FEATURES OF INGAALAS INP HETEROSTRUCTURES
Authors: RAMAM A CHUA SJ
Citation: A. Ramam et Sj. Chua, FEATURES OF INGAALAS INP HETEROSTRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 565-569
FIRST-PRINCIPLES CALCULATIONS OF GAAS1-XPX-AL0.3GA0.7AS(001) BAND OFFSETS
Authors: ZHANG XH CHUA SJ XU SJ FAN WJ
Citation: Xh. Zhang et al., FIRST-PRINCIPLES CALCULATIONS OF GAAS1-XPX-AL0.3GA0.7AS(001) BAND OFFSETS, Journal of physics. Condensed matter, 10(3), 1998, pp. 577-580
SUPPRESSION OF THERMAL-CONVECTION AND ITS EFFECT ON GROWTH OF GAN IN METAL-ORGANIC VAPOR-PHASE EPITAXY
Authors: LI G CHUA SJ WANG W
Citation: G. Li et al., SUPPRESSION OF THERMAL-CONVECTION AND ITS EFFECT ON GROWTH OF GAN IN METAL-ORGANIC VAPOR-PHASE EPITAXY, CHEMICAL VAPOR DEPOSITION, 4(5), 1998, pp. 186
INTEGRATION OF SALICIDE PROCESS FOR DEEP-SUBMICRON CMOS TECHNOLOGY - EFFECT OF NITROGEN ARGON-AMORPHIZED IMPLANT ON SALICIDE FORMATION/
Authors: HO CS PEY KL WONG H KARUNASIRI RPG CHUA SJ LEE KH CHAN LH
Citation: Cs. Ho et al., INTEGRATION OF SALICIDE PROCESS FOR DEEP-SUBMICRON CMOS TECHNOLOGY - EFFECT OF NITROGEN ARGON-AMORPHIZED IMPLANT ON SALICIDE FORMATION/, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 274-279
THE DESIGN OF A TWIN-RIB WAVE-GUIDE OPTICAL SWITCH BY THE DISCRETE SPECTRAL INDEX METHOD
Authors: NG WC CHUA SJ
Citation: Wc. Ng et Sj. Chua, THE DESIGN OF A TWIN-RIB WAVE-GUIDE OPTICAL SWITCH BY THE DISCRETE SPECTRAL INDEX METHOD, Microwave and optical technology letters, 18(5), 1998, pp. 337-339
MONITORING OF TISI2 FORMATION ON NARROW POLYCRYSTALLINE SILICON LINESUSING RAMAN-SPECTROSCOPY
Authors: LIM EH KARUNASIRI G CHUA SJ WONG H PEY KL LEE KH
Citation: Eh. Lim et al., MONITORING OF TISI2 FORMATION ON NARROW POLYCRYSTALLINE SILICON LINESUSING RAMAN-SPECTROSCOPY, IEEE electron device letters, 19(5), 1998, pp. 171-173
IN0.2GA0.8AS GAAS QUANTUM-WELL LASER WITH C-DOPED CLADDING AND OHMIC CONTACT LAYERS/
Authors: LI G YUAN S TAN HH LIU XQ CHUA SJ JAGADISH C
Citation: G. Li et al., IN0.2GA0.8AS GAAS QUANTUM-WELL LASER WITH C-DOPED CLADDING AND OHMIC CONTACT LAYERS/, Journal of electronic materials, 27(9), 1998, pp. 61-63
CARRIER CAPTURE IN INAS MONOLAYER QUANTUM-WELLS GROWN ON GAAS SUBSTRATES
Authors: CHUA SJ XU SJ ZHANG XH ZHANG X
Citation: Sj. Chua et al., CARRIER CAPTURE IN INAS MONOLAYER QUANTUM-WELLS GROWN ON GAAS SUBSTRATES, Microelectronic engineering, 43-4, 1998, pp. 287-293
ATOM DIFFUSION DURING MBE GROWTH ON PATTERNED SUBSTRATE
Authors: JIAN J ZHOU JX ZHONG ZT CHUA SJ
Citation: J. Jian et al., ATOM DIFFUSION DURING MBE GROWTH ON PATTERNED SUBSTRATE, Microelectronic engineering, 43-4, 1998, pp. 409-414
CHARACTERIZATION OF TITANIUM SILICIDE BY RAMAN-SPECTROSCOPY FOR SUBMICRON IC PROCESSING
Authors: LIM EH KARUNASIRI G CHUA SJ SHEN ZX WONG H PEY KL LEE KH CHAN L
Citation: Eh. Lim et al., CHARACTERIZATION OF TITANIUM SILICIDE BY RAMAN-SPECTROSCOPY FOR SUBMICRON IC PROCESSING, Microelectronic engineering, 43-4, 1998, pp. 611-617
DETERMINING SUBSTRATE ORIENTATION USING A HIGH-RESOLUTION DIFFRACTOMETER
Authors: HALLIWELL MAG CHUA SJ
Citation: Mag. Halliwell et Sj. Chua, DETERMINING SUBSTRATE ORIENTATION USING A HIGH-RESOLUTION DIFFRACTOMETER, Journal of crystal growth, 192(3-4), 1998, pp. 456-461
SUBSTRATE ORIENTATION EFFECT ON ZN DELTA-DOPING IN GAAS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
Authors: LI G PRINCE KE PETRAVIC M CHUA SJ JAGADISH C
Citation: G. Li et al., SUBSTRATE ORIENTATION EFFECT ON ZN DELTA-DOPING IN GAAS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 191(3), 1998, pp. 357-360
THE STUDY OF PIEZOELECTRIC EFFECT IN WURTZITE GAN INGAN/ALGAN MULTILAYER STRUCTURES/
Authors: LIU W TEO KL LI MF CHUA SJ UCHIDA K TOKUNAGA H AKUTSU N MATSUMOTO K
Citation: W. Liu et al., THE STUDY OF PIEZOELECTRIC EFFECT IN WURTZITE GAN INGAN/ALGAN MULTILAYER STRUCTURES/, Journal of crystal growth, 190, 1998, pp. 648-651
PHOTOREFLECTANCE STUDY OF BAND-GAP RENORMALIZATION IN SI-DOPED GAN
Authors: ZHANG X CHUA SJ LIU W CHONG KB
Citation: X. Zhang et al., PHOTOREFLECTANCE STUDY OF BAND-GAP RENORMALIZATION IN SI-DOPED GAN, Journal of crystal growth, 190, 1998, pp. 687-691
BLUESHIFT OF EFFECTIVE BAND-GAP IN N-I-P-I DOPING SUPERLATTICES AS A FUNCTION OF OPTICAL-EXCITATION INTENSITY
Authors: BASTOLA S CHUA SJ XU SJ
Citation: S. Bastola et al., BLUESHIFT OF EFFECTIVE BAND-GAP IN N-I-P-I DOPING SUPERLATTICES AS A FUNCTION OF OPTICAL-EXCITATION INTENSITY, Journal of applied physics, 83(3), 1998, pp. 1476-1480
BAND OFFSETS AT THE INALGAAS INALAS(001) HETEROSTRUCTURES LATTICE-MATCHED TO AN INP SUBSTRATE/
Authors: ZHANG XH CHUA SJ XU SJ FAN WJ
Citation: Xh. Zhang et al., BAND OFFSETS AT THE INALGAAS INALAS(001) HETEROSTRUCTURES LATTICE-MATCHED TO AN INP SUBSTRATE/, Journal of applied physics, 83(11), 1998, pp. 5852-5854
BAND OFFSETS AT GAINP ALGAINP(001) HETEROSTRUCTURES LATTICE-MATCHED TO GAAS/
Authors: ZHANG XH CHUA SJ FAN WJ
Citation: Xh. Zhang et al., BAND OFFSETS AT GAINP ALGAINP(001) HETEROSTRUCTURES LATTICE-MATCHED TO GAAS/, Applied physics letters, 73(8), 1998, pp. 1098-1100
LUMINESCENCE CHARACTERISTICS OF IMPURITIES-ACTIVATED ZNS NANOCRYSTALSPREPARED IN MICROEMULSION WITH HYDROTHERMAL TREATMENT
Authors: XU SJ CHUA SJ LIU B GAN LM CHEW CH XU GQ
Citation: Sj. Xu et al., LUMINESCENCE CHARACTERISTICS OF IMPURITIES-ACTIVATED ZNS NANOCRYSTALSPREPARED IN MICROEMULSION WITH HYDROTHERMAL TREATMENT, Applied physics letters, 73(4), 1998, pp. 478-480
CHARACTERISTICS OF INGAAS QUANTUM-DOT INFRARED PHOTODETECTORS
Authors: XU SJ CHUA SJ MEI T WANG XC ZHANG XH KARUNASIRI G FAN WJ WANG CH JIANG J WANG S XIE XG
Citation: Sj. Xu et al., CHARACTERISTICS OF INGAAS QUANTUM-DOT INFRARED PHOTODETECTORS, Applied physics letters, 73(21), 1998, pp. 3153-3155
PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM COPPER-DOPED ZINC-SULFIDE NANOCRYSTALS POLYMER COMPOSITE
Authors: QUE WX ZHOU Y LAM YL CHAN YC KAM CH LIU B GAN LM CHEW CH XU GQ CHUA SJ XU SJ MENDIS FVC
Citation: Wx. Que et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM COPPER-DOPED ZINC-SULFIDE NANOCRYSTALS POLYMER COMPOSITE, Applied physics letters, 73(19), 1998, pp. 2727-2729
POLARIZATION DEPENDENCE OF INTRABAND ABSORPTION IN SELF-ORGANIZED QUANTUM DOTS
Authors: CHUA SJ XU SJ ZHANG XH WANG XC MEI T FAN WJ WANG CH JIANG J XIE XG
Citation: Sj. Chua et al., POLARIZATION DEPENDENCE OF INTRABAND ABSORPTION IN SELF-ORGANIZED QUANTUM DOTS, Applied physics letters, 73(14), 1998, pp. 1997-1999
IMPROVED MG-DOPED GAN FILMS GROWN OVER A MULTILAYERED BUFFER
Authors: ZHANG X CHUA SJ LI P CHONG KB WANG W
Citation: X. Zhang et al., IMPROVED MG-DOPED GAN FILMS GROWN OVER A MULTILAYERED BUFFER, Applied physics letters, 73(13), 1998, pp. 1772-1774
Risultati: 1-25 | 26-50 | 51-67