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Results:
1-7
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Results: 7
Authors:
GUO JC
CHANG MC
LU CY
HSU CCH
CHUNG SSS
Citation: Jc. Guo et al., TRANSCONDUCTANCE ENHANCEMENT DUE TO BACK BIAS FOR SUBMICRON NMOSFET, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 288-294
Authors:
GUO JC
HSU CCH
CHUNG SSS
Citation: Jc. Guo et al., DIRECT OBSERVATION OF CHANNEL-DOPING-DEPENDENT REVERSE SHORT-CHANNEL EFFECT USING DECOUPLED C-V TECHNIQUE, JPN J A P 1, 33(1B), 1994, pp. 630-634
Authors:
WANG TH
HUANG CM
CHOU PC
CHUNG SSS
CHANG TE
Citation: Th. Wang et al., EFFECTS OF HOT-CARRIER-INDUCED INTERFACE STATE GENERATION IN SUBMICRON LDD MOSFETS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1618-1622
Authors:
GUO JC
LU CY
HSU CCH
LIN PS
CHUNG SSS
Citation: Jc. Guo et al., PERFORMANCE AND RELIABILITY EVALUATION OF HIGH DIELECTRIC LDD SPACER ON DEEP-SUBMICROMETER LDD MOSFET, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1239-1248
Authors:
GUO JC
CHUNG SSS
HSU CCH
Citation: Jc. Guo et al., A NEW APPROACH TO DETERMINE THE EFFECTIVE CHANNEL-LENGTH AND THE DRAIN-AND-SOURCE SERIES RESISTANCE OF MINIATURIZED MOSFETS, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1811-1818
Authors:
YANG JJ
CHUNG SSS
CHANG CH
LEE GH
Citation: Jj. Yang et al., A UNIFIED 3-D MOBILITY MODEL FOR THE SIMULATION OF SUBMICRON MOS DEVICES, JPN J A P 1, 32(4), 1993, pp. 1583-1589
Authors:
CHUNG SSS
LEE JS
Citation: Sss. Chung et Js. Lee, A NEW APPROACH TO DETERMINE THE DRAIN-AND-SOURCE SERIES RESISTANCE OFLDD MOSFETS, I.E.E.E. transactions on electron devices, 40(9), 1993, pp. 1709-1711
Risultati:
1-7
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