Authors: CLAISSE PR JIANG W KIELY PA GABLE B KOONSE B

Citation: Pr. Claisse et al., SINGLE HIGH-ORDER MODE VCSEL, Electronics Letters, 34(7), 1998, pp. 681-682

Authors: JIANG W GAW C KIELY P LAWRENCE B LEBBY M CLAISSE PR

Citation: W. Jiang et al., EFFECT OF PROTON IMPLANTATION ON THE DEGRADATION OF GAAS ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS/, Electronics Letters, 33(2), 1997, pp. 137-139

Authors: KIELY PA DOCTER DP VANG TA TAYLOR GW EVALDSSON PA CLAISSE PR TELL B BROWNGOEBELER KF

Citation: Pa. Kiely et al., AC CHARACTERIZATION OF THE P-INVERTED BURIED-CHANNEL HETEROSTRUCTURE FET AND ITS SUITABILITY FOR COMPLEMENTARY ELECTRONICS, IEE proceedings. Circuits, devices and systems, 142(2), 1995, pp. 105-108

Authors: TAYLOR GW CLAISSE PR

Citation: Gw. Taylor et Pr. Claisse, TRANSPORT SOLUTIONS FOR THE SCH QUANTUM-WELL LASER-DIODE, IEEE journal of quantum electronics, 31(12), 1995, pp. 2133-2141

Authors: KIELY PA VANG TA MICOVIC M LEPORE A TAYLOR GW MALIK R DOCTER DP EVALDSSON PA CLAISSE PR BROWNGOEBELER KF STORZ F

Citation: Pa. Kiely et al., SUBMICROMETER GATE LENGTH SCALING OF INVERSION CHANNEL HETEROJUNCTIONFIELD-EFFECT TRANSISTOR, Electronics Letters, 30(6), 1994, pp. 529-531