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Results: 1-25 | 26-46
Results: 1-25/46
THICK PURE GE FILMS FOR PHOTODETECTORS
Authors: SCARINCI F FIORDELISI M CALARCO R LAGOMARSINO S COLACE L MASINI G BARUCCA G COFFA S SPINELLA S
Citation: F. Scarinci et al., THICK PURE GE FILMS FOR PHOTODETECTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1754-1756
SILICON-BASED OPTOELECTRONICS
Authors: COFFA S TSYBESKOV L
Citation: S. Coffa et L. Tsybeskov, SILICON-BASED OPTOELECTRONICS, MRS bulletin, 23(4), 1998, pp. 16-17
LIGHT-EMISSION FROM ER-DOPED SI - MATERIALS PROPERTIES, MECHANISMS, AND DEVICE PERFORMANCE
Authors: COFFA S FRANZO G PRIOLO F
Citation: S. Coffa et al., LIGHT-EMISSION FROM ER-DOPED SI - MATERIALS PROPERTIES, MECHANISMS, AND DEVICE PERFORMANCE, MRS bulletin, 23(4), 1998, pp. 25-32
MIGRATION AND INTERACTION OF POINT-DEFECTS AT ROOM-TEMPERATURE IN CRYSTALLINE SILICON
Authors: PRIVITERA V COFFA S PRIOLO F RIMINI E
Citation: V. Privitera et al., MIGRATION AND INTERACTION OF POINT-DEFECTS AT ROOM-TEMPERATURE IN CRYSTALLINE SILICON, La rivista del nuovo cimento della Societa italiana di fisica, 21(8), 1998, pp. 1-52
ERBIUM IMPLANTATION IN SILICON - FROM MATERIALS PROPERTIES TO LIGHT-EMITTING DEVICES
Authors: PRIOLO F FRANZO G COFFA S CARNERA A
Citation: F. Priolo et al., ERBIUM IMPLANTATION IN SILICON - FROM MATERIALS PROPERTIES TO LIGHT-EMITTING DEVICES, Materials chemistry and physics, 54(1-3), 1998, pp. 273-279
EXCITATION AND NONRADIATIVE DEEXCITATION PROCESSES OF ER3+ IN CRYSTALLINE SI
Authors: PRIOLO F FRANZO G COFFA S CARNERA A
Citation: F. Priolo et al., EXCITATION AND NONRADIATIVE DEEXCITATION PROCESSES OF ER3+ IN CRYSTALLINE SI, Physical review. B, Condensed matter, 57(8), 1998, pp. 4443-4455
MATERIALS AND TECHNOLOGY CHALLENGES IN SEMICONDUCTOR PROCESSING
Authors: COFFA S MEYYAPPAN M NISHI H
Citation: S. Coffa et al., MATERIALS AND TECHNOLOGY CHALLENGES IN SEMICONDUCTOR PROCESSING, Solid-state electronics, 42(5), 1998, pp. 1-4
SURFACE, STRESS, AND IMPURITY EFFECTS ON ROOM-TEMPERATURE MIGRATION OF ION-BEAM-GENERATED POINT-DEFECTS
Authors: COFFA S LAMAGNA A PRIVITERA V MANNINO G
Citation: S. Coffa et al., SURFACE, STRESS, AND IMPURITY EFFECTS ON ROOM-TEMPERATURE MIGRATION OF ION-BEAM-GENERATED POINT-DEFECTS, Applied physics letters, 73(11), 1998, pp. 1571-1573
DIRECT EVIDENCE OF IMPACT EXCITATION AND SPATIAL PROFILING OF EXCITEDER IN LIGHT-EMITTING SI DIODES
Authors: COFFA S FRANZO G PRIOLO F PACELLI A LACAITA A
Citation: S. Coffa et al., DIRECT EVIDENCE OF IMPACT EXCITATION AND SPATIAL PROFILING OF EXCITEDER IN LIGHT-EMITTING SI DIODES, Applied physics letters, 73(1), 1998, pp. 93-95
OXYGEN-IMPURITY INTERACTIONS IN CRYSTALLINE SILICON - THE CASES OF ALUMINUM AND ERBIUM
Authors: RIMINI E LAFERLA A GALVAGNO G COFFA S FRANZO G PRIOLO F
Citation: E. Rimini et al., OXYGEN-IMPURITY INTERACTIONS IN CRYSTALLINE SILICON - THE CASES OF ALUMINUM AND ERBIUM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 18-23
DYNAMIC-MODEL OF SILICON DEVICES WITH ENERGY-LOCALIZED TRAP CENTERS
Authors: VALDINOCI M COLALONGO L RUDAN M COFFA S
Citation: M. Valdinoci et al., DYNAMIC-MODEL OF SILICON DEVICES WITH ENERGY-LOCALIZED TRAP CENTERS, Microelectronics, 28(1), 1997, pp. 93-100
EVOLUTION FROM POINT TO EXTENDED DEFECTS IN ION-IMPLANTED SILICON
Authors: BENTON JL LIBERTINO S KRINGHOJ P EAGLESHAM DJ POATE JM COFFA S
Citation: Jl. Benton et al., EVOLUTION FROM POINT TO EXTENDED DEFECTS IN ION-IMPLANTED SILICON, Journal of applied physics, 82(1), 1997, pp. 120-125
MECHANISM AND PERFORMANCE OF FORWARD AND REVERSE BIAS ELECTROLUMINESCENCE AT 1.54 MU-M FROM ER-DOPED SI DIODES
Authors: FRANZO G COFFA S PRIOLO F SPINELLA C
Citation: G. Franzo et al., MECHANISM AND PERFORMANCE OF FORWARD AND REVERSE BIAS ELECTROLUMINESCENCE AT 1.54 MU-M FROM ER-DOPED SI DIODES, Journal of applied physics, 81(6), 1997, pp. 2784-2793
DEPTH PROFILES OF VACANCY-TYPE AND INTERSTITIAL-TYPE DEFECTS IN MEV IMPLANTED SI
Authors: COFFA S PRIVITERA V PRIOLO F LIBERTINO S MANNINO G
Citation: S. Coffa et al., DEPTH PROFILES OF VACANCY-TYPE AND INTERSTITIAL-TYPE DEFECTS IN MEV IMPLANTED SI, Journal of applied physics, 81(4), 1997, pp. 1639-1644
EVOLUTION OF INTERSTITIAL-TYPE AND VACANCY-TYPE DEFECTS UPON THERMAL ANNEALING IN ION-IMPLANTED SI
Authors: LIBERTINO S BENTON JL JACOBSON DC EAGLESHAM DJ POATE JM COFFA S KRINGHOJ P FUOCHI PG LAVALLE M
Citation: S. Libertino et al., EVOLUTION OF INTERSTITIAL-TYPE AND VACANCY-TYPE DEFECTS UPON THERMAL ANNEALING IN ION-IMPLANTED SI, Applied physics letters, 71(3), 1997, pp. 389-391
THE EFFECT OF IMPURITY CONTENT ON POINT-DEFECT EVOLUTION IN ION-IMPLANTED AND ELECTRON-IRRADIATED SI
Authors: LIBERTINO S BENTON JL JACOBSON DC EAGLESHAM DJ POATE JM COFFA S FUOCHI PG LAVALLE M
Citation: S. Libertino et al., THE EFFECT OF IMPURITY CONTENT ON POINT-DEFECT EVOLUTION IN ION-IMPLANTED AND ELECTRON-IRRADIATED SI, Applied physics letters, 70(22), 1997, pp. 3002-3004
EVOLUTION OF THE LOCAL ENVIRONMENT AROUND ER UPON THERMAL ANNEALING IN ER AND O CO-IMPLANTED SI
Authors: TERRASI A FRANZO G COFFA S PRIOLO F DACAPITO F MOBILIO S
Citation: A. Terrasi et al., EVOLUTION OF THE LOCAL ENVIRONMENT AROUND ER UPON THERMAL ANNEALING IN ER AND O CO-IMPLANTED SI, Applied physics letters, 70(13), 1997, pp. 1712-1714
ERBIUM DOPING OF CRYSTALLINE AND AMORPHOUS-SILICON FOR OPTOELECTRONICAPPLICATIONS
Authors: COFFA S LOMBARDO S PRIOLO F FRANZO G CAMPISANO SU POLMAN A VANDENHOVEN GN
Citation: S. Coffa et al., ERBIUM DOPING OF CRYSTALLINE AND AMORPHOUS-SILICON FOR OPTOELECTRONICAPPLICATIONS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(10), 1996, pp. 1131-1148
ROOM-TEMPERATURE MIGRATION OF ION-BEAM INJECTED POINT-DEFECTS IN CRYSTALLINE SILICON
Authors: PRIVITERA V COFFA S PRIOLO F LARSEN KK LIBERTINO S CARNERA A
Citation: V. Privitera et al., ROOM-TEMPERATURE MIGRATION OF ION-BEAM INJECTED POINT-DEFECTS IN CRYSTALLINE SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 9-13
ION-IMPLANTATION DOPING OF SI FOR OPTOELECTRONIC APPLICATIONS
Authors: COFFA S FRANZO G PRIOLO F LIBERTINO S MOSCA R GOMBIA E SPINELLA C
Citation: S. Coffa et al., ION-IMPLANTATION DOPING OF SI FOR OPTOELECTRONIC APPLICATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 74-80
OPTICAL DOPING OF MATERIALS BY ERBIUM ION-IMPLANTATION
Authors: PRIOLO F FRANZO G COFFA S POLMAN A SNOEKS E VANDENHOVEN GN LIBERTINO S LOMBARDO S CAMPISANO SU CARNERA A
Citation: F. Priolo et al., OPTICAL DOPING OF MATERIALS BY ERBIUM ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 77-84
THE DAMAGE RECOVERY AND ELECTRICAL ACTIVATION OF SHALLOW BORON IMPLANTS IN SILICON - THE EFFECTS OF HIGH-ENERGY IMPLANTS
Authors: LARSEN KK PRIVITERA V COFFA S PRIOLO F SPINELLA C SAGGIO M CAMPISANO SU
Citation: Kk. Larsen et al., THE DAMAGE RECOVERY AND ELECTRICAL ACTIVATION OF SHALLOW BORON IMPLANTS IN SILICON - THE EFFECTS OF HIGH-ENERGY IMPLANTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 139-143
TRAP-LIMITED MIGRATION OF SI SELF-INTERSTITIALS AT ROOM-TEMPERATURE
Authors: LARSEN KK PRIVITERA V COFFA S PRIOLO F CAMPISANO SU CARNERA A
Citation: Kk. Larsen et al., TRAP-LIMITED MIGRATION OF SI SELF-INTERSTITIALS AT ROOM-TEMPERATURE, Physical review letters, 76(9), 1996, pp. 1493-1496
EFFICIENCY AND THERMAL-STABILITY OF PT GETTERING IN CRYSTALLINE SI
Authors: CACCIATO A CAMALLERI CM FRANCO G RAINERI V COFFA S
Citation: A. Cacciato et al., EFFICIENCY AND THERMAL-STABILITY OF PT GETTERING IN CRYSTALLINE SI, Journal of applied physics, 80(8), 1996, pp. 4322-4327
KINETICS AND THERMODYNAMICS CONSTRAINTS IN PT GETTERING BY P DIFFUSION IN SI
Authors: COFFA S FRANCO G CAMALLERI CM GIRAFFA A
Citation: S. Coffa et al., KINETICS AND THERMODYNAMICS CONSTRAINTS IN PT GETTERING BY P DIFFUSION IN SI, Journal of applied physics, 80(1), 1996, pp. 161-166
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