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Results: 1-25 | 26-37 |
Results: 26-37/37
MICROELECTRONICS EDUCATION IN BELGIUM
Authors: COLINGE JP
Citation: Jp. Colinge, MICROELECTRONICS EDUCATION IN BELGIUM, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 199(1), 1995, pp. 39-43
THE DEVELOPMENT OF CMOS SIMOX TECHNOLOGY
Authors: COLINGE JP
Citation: Jp. Colinge, THE DEVELOPMENT OF CMOS SIMOX TECHNOLOGY, Microelectronic engineering, 28(1-4), 1995, pp. 423-430
THE ESD PROTECTION MECHANISMS AND THE RELATED FAILURE MODES AND MECHANISMS OBSERVED IN SOI SNAPBACK NMOSFETS
Authors: VERHAEGE K GROESENEKEN G COLINGE JP MAES HE
Citation: K. Verhaege et al., THE ESD PROTECTION MECHANISMS AND THE RELATED FAILURE MODES AND MECHANISMS OBSERVED IN SOI SNAPBACK NMOSFETS, Microelectronics and reliability, 35(3), 1995, pp. 555-566
TEMPORAL ANALYSIS OF SEU IN SOI GAA SRAMS
Authors: FRANCIS P COLINGE JP BERGER G
Citation: P. Francis et al., TEMPORAL ANALYSIS OF SEU IN SOI GAA SRAMS, IEEE transactions on nuclear science, 42(6), 1995, pp. 2127-2137
THEORETICAL CONSIDERATIONS FOR SRAM TOTAL-DOSE HARDENING
Authors: FRANCIS P FLANDRE D COLINGE JP
Citation: P. Francis et al., THEORETICAL CONSIDERATIONS FOR SRAM TOTAL-DOSE HARDENING, IEEE transactions on nuclear science, 42(2), 1995, pp. 83-91
PERFORMANCES OF SOI CMOS OTA COMBINING ZTC AND GAIN-BOOSTING TECHNIQUES
Authors: GENTINNE B EGGERMONT JP COLINGE JP
Citation: B. Gentinne et al., PERFORMANCES OF SOI CMOS OTA COMBINING ZTC AND GAIN-BOOSTING TECHNIQUES, Electronics Letters, 31(24), 1995, pp. 2092-2093
EVIDENCE OF 2-DIMENSIONAL CARRIER CONFINEMENT IN THIN N-CHANNEL SOI GATE-ALL-AROUND (GAA) DEVICES
Authors: COLINGE JP BAIE X BAYOT V
Citation: Jp. Colinge et al., EVIDENCE OF 2-DIMENSIONAL CARRIER CONFINEMENT IN THIN N-CHANNEL SOI GATE-ALL-AROUND (GAA) DEVICES, IEEE electron device letters, 15(6), 1994, pp. 193-195
SUBTHRESHOLD SLOPE OF LONG-CHANNEL, ACCUMULATION-MODE P-CHANNEL SOI MOSFETS
Authors: COLINGE JP FLANDRE D VANDEWIELE F
Citation: Jp. Colinge et al., SUBTHRESHOLD SLOPE OF LONG-CHANNEL, ACCUMULATION-MODE P-CHANNEL SOI MOSFETS, Solid-state electronics, 37(2), 1994, pp. 289-294
RADIATION-HARD DESIGN FOR SOI MOS INVERTERS
Authors: FRANCIS P MICHEL C FLANDRE D COLINGE JP
Citation: P. Francis et al., RADIATION-HARD DESIGN FOR SOI MOS INVERTERS, IEEE transactions on nuclear science, 41(2), 1994, pp. 402-407
P+-P-P+ PSEUDO-BIPOLAR LATERAL SOI TRANSISTOR
Authors: COLINGE JP FLANDRE D DECEUSTER D
Citation: Jp. Colinge et al., P+-P-P+ PSEUDO-BIPOLAR LATERAL SOI TRANSISTOR, Electronics Letters, 30(18), 1994, pp. 1543-1545
DOUBLE SNAPBACK IN SOI NMOSFETS AND ITS APPLICATION FOR SOI ESD PROTECTION
Authors: VERHAEGE K GROESENEKEN G COLINGE JP MAES HE
Citation: K. Verhaege et al., DOUBLE SNAPBACK IN SOI NMOSFETS AND ITS APPLICATION FOR SOI ESD PROTECTION, IEEE electron device letters, 14(7), 1993, pp. 326-328
EFFECTS OF TOTAL-DOSE IRRADIATION ON GATE-ALL-AROUND (GAA) DEVICES
Authors: COLINGE JP TERAO A
Citation: Jp. Colinge et A. Terao, EFFECTS OF TOTAL-DOSE IRRADIATION ON GATE-ALL-AROUND (GAA) DEVICES, IEEE transactions on nuclear science, 40(2), 1993, pp. 78-82
Risultati: 1-25 | 26-37 |