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Results:
1-13
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Results: 13
Authors:
HENRY F
ARMAS B
BERJOAN R
COMBESCURE C
DUPUY C
Citation: F. Henry et al., LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF ALN-SI3N4 CODEPOSITS, Journal of the European Ceramic Society, 17(15-16), 1997, pp. 1803-1806
Authors:
HENRY F
ARMAS B
COMBESCURE C
FIGUERAS A
GARELIK S
Citation: F. Henry et al., BETA-SIC DEPOSITION BY HOT-WALL MOCVD USING TETRAMETHYLSILANE, Surface & coatings technology, 80(1-2), 1996, pp. 134-138
Authors:
HENRY F
ARMAS B
COMBESCURE C
THENEGAL D
FLAMAND R
Citation: F. Henry et al., CHEMICAL-VAPOR-DEPOSITION OF ALN-SI3N4 CODEPOSITS, Journal de physique. IV, 5(C5), 1995, pp. 785-792
Authors:
MADIGOU V
VEINTEMILLAS S
RODRIGUEZCLEMENTE R
FIGUERAS A
ARMAS B
COMBESCURE C
Citation: V. Madigou et al., THERMODYNAMIC ANALYSIS OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF SIC USING TETRAMETHYLSILANE AS PRECURSOR .2. INFLUENCE OF THE MINORITARY TETRAMETHYLSILANE PYROLYSIS BY-PRODUCTS IN THE PREFERRED CRYSTALLIZATION OF SIC LAYERS, Journal of crystal growth, 148(4), 1995, pp. 390-395
Authors:
DORIGNAC D
MAZEL A
KIHN Y
SEVELY J
ASPAR B
ARMAS B
COMBESCURE C
Citation: D. Dorignac et al., TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF ALN DEPOSITS, Journal of the European Ceramic Society, 13(4), 1994, pp. 345-353
Authors:
MADIGOU V
VEINTEMILLAS S
RODRIGUEZCLEMENTE R
FIGUERAS A
COMBESCURE C
ARMAS B
Citation: V. Madigou et al., PREFERRED ORIENTATION OF SIC COATINGS OBTAINED BY MOCVD AND ITS CORRELATION WITH THE PYROLYSIS BY-PRODUCTS OF SI(CH3)(4), Vacuum, 45(10-11), 1994, pp. 1119-1120
Authors:
CHEHOUANI H
BENET S
ARMAS B
COMBESCURE C
FIGUERAS A
GARELIK S
Citation: H. Chehouani et al., TRANSPORT PHENOMENA IN A COLD-WALL VERTICAL REACTOR FOR METALORGANIC VAPOR-PHASE GROWTH OF BETA-SIC LAYERS, Journal de physique. IV, 3(C3), 1993, pp. 131-138
Authors:
HENRY F
MARTI P
CASAUX Y
COMBESCURE C
FIGUERAS A
MADIGOU V
RODRIGUEZCLEMENTE R
MAZEL A
SEVELY J
ARMAS B
Citation: F. Henry et al., LPCVD OF SIC LAYERS IN A HOT-WALL REACTOR USING TMS PRECURSOR, Journal de physique. IV, 3(C3), 1993, pp. 329-336
Authors:
HENRY F
ARMAS B
BALAT M
BERJOAN R
COMBESCURE C
Citation: F. Henry et al., A STUDY OF ALN-SI3N4 CODEPOSITS USING THE LPCVD TECHNIQUE, Journal de physique. IV, 3(C3), 1993, pp. 519-526
Authors:
LABATUT C
COMBESCURE C
ARMAS B
Citation: C. Labatut et al., LPCVD OF AL2O3 LAYERS USING A HOT-WALL REACTOR, Journal de physique. IV, 3(C3), 1993, pp. 589-596
Authors:
CHEHOUANI H
BENET S
BRUNET S
ARMAS B
COMBESCURE C
Citation: H. Chehouani et al., NUMERICAL-SIMULATION OF HYDRODYNAMICS AND HEAT-TRANSFER IN A HOT-WALLCVD REACTOR, Revue Internationale des Hautes Temperatures et des Refractaires, 28(3), 1993, pp. 71-80
Authors:
ASPAR B
ARMAS B
COMBESCURE C
FIGUERAS A
RODRIGUEZCLEMENTE R
MAZEL A
KIHN Y
SEVELY J
Citation: B. Aspar et al., OXYGEN AND HYDROGEN EFFECTS ON THE CHEMICAL-VAPOR DEPOSITION OF ALUMINUM NITRIDE FILMS, Materials research bulletin, 28(6), 1993, pp. 531-539
Authors:
RODRIGUEZCLEMENTE R
ASPAR B
AZEMA N
ARMAS B
COMBESCURE C
DURAND J
FIGUERAS A
Citation: R. Rodriguezclemente et al., MORPHOLOGICAL PROPERTIES OF CHEMICAL-VAPOR-DEPOSITED ALN FILMS, Journal of crystal growth, 133(1-2), 1993, pp. 59-70
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