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Results: 1-12 |
Results: 12
COMBINATORIAL RULE EXPLOSION ELIMINATED BY A FUZZY RULE CONFIGURATION
Authors: COMBS WE ANDREWS JE
Citation: We. Combs et Je. Andrews, COMBINATORIAL RULE EXPLOSION ELIMINATED BY A FUZZY RULE CONFIGURATION, IEEE transactions on fuzzy systems, 6(1), 1998, pp. 1-11
ACCELERATED TESTS FOR SIMULATING LOW-DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS
Authors: WITCZAK SC SCHRIMPF RD GALLOWAY KF FLEETWOOD DM PEASE RL PUHL JM SCHMIDT DM COMBS WE SUEHLE JS
Citation: Sc. Witczak et al., ACCELERATED TESTS FOR SIMULATING LOW-DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3151-3160
COMPARISON OF IONIZING-RADIATION-INDUCED GAIN DEGRADATION IN LATERAL,SUBSTRATE, AND VERTICAL PNP BJTS
Authors: SCHMIDT DM FLEETWOOD DM SCHRIMPF RD PEASE RL GRAVES RJ JOHNSON GH GALLOWAY KF COMBS WE
Citation: Dm. Schmidt et al., COMPARISON OF IONIZING-RADIATION-INDUCED GAIN DEGRADATION IN LATERAL,SUBSTRATE, AND VERTICAL PNP BJTS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1541-1549
HARDNESS-ASSURANCE ISSUES FOR LATERAL PNP BIPOLAR JUNCTION TRANSISTORS
Authors: SCHRIMPF RD GRAVES RJ SCHMIDT DM FLEETWOOD DM PEASE RL COMBS WE DELAUS M
Citation: Rd. Schrimpf et al., HARDNESS-ASSURANCE ISSUES FOR LATERAL PNP BIPOLAR JUNCTION TRANSISTORS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1641-1649
EXCESS COLLECTOR CURRENT DUE TO AN OXIDE-TRAPPED-CHARGE-INDUCED EMITTER IN IRRADIATED NPN BJTS
Authors: WEI A KOSIER SL SCHRIMPF RD COMBS WE DELAUS M
Citation: A. Wei et al., EXCESS COLLECTOR CURRENT DUE TO AN OXIDE-TRAPPED-CHARGE-INDUCED EMITTER IN IRRADIATED NPN BJTS, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 923-927
PHYSICALLY-BASED COMPARISON OF HOT-CARRIER-INDUCED AND IONIZING-RADIATION-INDUCED DEGRADATION IN BJTS
Authors: KOSIER SL WEI A SCHRIMPF RD FLEETWOOD DM DELAUS MD COMBS WE
Citation: Sl. Kosier et al., PHYSICALLY-BASED COMPARISON OF HOT-CARRIER-INDUCED AND IONIZING-RADIATION-INDUCED DEGRADATION IN BJTS, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 436-444
BOUNDING THE TOTAL-DOSE RESPONSE OF MODERN BIPOLAR-TRANSISTORS
Authors: KOSIER SL COMBS WE WEI A SCHRIMPF RD FLEETWOOD DM DELAUS M PEASE RL
Citation: Sl. Kosier et al., BOUNDING THE TOTAL-DOSE RESPONSE OF MODERN BIPOLAR-TRANSISTORS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1864-1870
PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN DEGRADATIONAT LOW-DOSE RATES
Authors: FLEETWOOD DM KOSIER SL NOWLIN RN SCHRIMPF RD REBER RA DELAUS M WINOKUR PS WEI A COMBS WE PEASE RL
Citation: Dm. Fleetwood et al., PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN DEGRADATIONAT LOW-DOSE RATES, IEEE transactions on nuclear science, 41(6), 1994, pp. 1871-1883
COMPARISON OF HOT-CARRIER AND RADIATION-INDUCED INCREASES IN BASE CURRENT IN BIPOLAR-TRANSISTORS
Authors: PEASE RL KOSIER SL SCHRIMPF RD COMBS WE DAVEY M DELAUS M FLEETWOOD DM
Citation: Rl. Pease et al., COMPARISON OF HOT-CARRIER AND RADIATION-INDUCED INCREASES IN BASE CURRENT IN BIPOLAR-TRANSISTORS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2567-2573
DOSE-RATE EFFECTS ON RADIATION-INDUCED BIPOLAR JUNCTION TRANSISTOR GAIN DEGRADATION
Authors: WEI A KOSIER SL SCHRIMPF RD FLEETWOOD DM COMBS WE
Citation: A. Wei et al., DOSE-RATE EFFECTS ON RADIATION-INDUCED BIPOLAR JUNCTION TRANSISTOR GAIN DEGRADATION, Applied physics letters, 65(15), 1994, pp. 1918-1920
CHARGE SEPARATION FOR BIPOLAR-TRANSISTORS
Authors: KOSIER SL SCHRIMPF RD NOWLIN RN FLEETWOOD DM DELAUS M PEASE RL COMBS WE WEI A CHAI F
Citation: Sl. Kosier et al., CHARGE SEPARATION FOR BIPOLAR-TRANSISTORS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1276-1285
HARDNESS-ASSURANCE AND TESTING ISSUES FOR BIPOLAR BICMOS DEVICES/
Authors: NOWLIN RN FLEETWOOD DM SCHRIMPF RD PEASE RL COMBS WE
Citation: Rn. Nowlin et al., HARDNESS-ASSURANCE AND TESTING ISSUES FOR BIPOLAR BICMOS DEVICES/, IEEE transactions on nuclear science, 40(6), 1993, pp. 1686-1693
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