Citation: I. Coulthard et Tk. Sham, MORPHOLOGY OF POROUS SILICON LAYERS - IMAGE OF ACTIVE-SITES FROM REDUCTIVE DEPOSITION OF COPPER ONTO THE SURFACE, Applied surface science, 126(3-4), 1998, pp. 287-291
Authors:
NAFTEL SJ
COULTHARD I
SHAM TK
DAS SR
XU DX
Citation: Sj. Naftel et al., STRUCTURAL AND ELECTRONIC PROPERTY EVOLUTION OF NICKEL AND NICKEL SILICIDE THIN-FILMS ON SI(100) FROM MULTICORE X-RAY-ABSORPTION FINE-STRUCTURE STUDIES, Physical review. B, Condensed matter, 57(15), 1998, pp. 9179-9185
Citation: I. Coulthard et Tk. Sham, NOVEL PREPARATION OF NOBLE-METAL NANOSTRUCTURES UTILIZING POROUS SILICON, Solid state communications, 105(12), 1998, pp. 751-754
Authors:
COULTHARD I
BZOWSKI A
SHAM TK
HEALD SM
KUHN M
Citation: I. Coulthard et al., M-3,M-2 AND L-3,L-2 XAFS OF AU AND PT NANOPARTICLES ON POROUS SILICON, Journal de physique. IV, 7(C2), 1997, pp. 1133-1134
Authors:
COULTHARD I
SHAM TK
SIMARDNORMANDIN M
SARAN M
GARRETT JD
Citation: I. Coulthard et al., XAFS STUDIES OF TISI2 AND COSI2 THIN-FILMS AT THE TI, CO AND SI K-EDGE, Journal de physique. IV, 7(C2), 1997, pp. 1135-1136
Authors:
COULTHARD I
SHAM TK
GARRETT JD
SMELYANSKY VI
TSE JS
Citation: I. Coulthard et al., XAFS OF EARLY 4-D TRANSITION-METAL SILICIDES - 4-D METAL L-3,L-2 EDGEAND SI K-EDGE STUDIES, Journal de physique. IV, 7(C2), 1997, pp. 497-498
Authors:
NAFTEL SJ
COULTHARD I
SHAM TK
XU DX
ERICKSON L
DAS SR
Citation: Sj. Naftel et al., SYNCHROTRON-RADIATION CHARACTERIZATION OF METAL SILICIDE THIN-FILMS -SOME OBSERVATIONS, Thin solid films, 308, 1997, pp. 580-584
Citation: I. Coulthard et al., VUV INDUCED LUMINESCENCE FROM POROUS SILICON, Journal of electron spectroscopy and related phenomena, 79, 1996, pp. 233-236
Citation: I. Coulthard et Tk. Sham, CHARGE REDISTRIBUTION IN PD-AG ALLOYS FROM A LOCAL PERSPECTIVE, Physical review letters, 77(23), 1996, pp. 4824-4827
Citation: Tk. Sham et al., M(3,2)-EDGE X-RAY-ABSORPTION NEAR-EDGE STRUCTURE SPECTROSCOPY - AN ALTERNATIVE PROBE TO THE L(3,2)-EDGE NEAR-EDGE STRUCTURE FOR THE UNOCCUPIED DENSITIES OF D-STATES OF 5D METALS, Journal of applied physics, 79(9), 1996, pp. 7134-7138
Authors:
RIBES AC
DAMASKINOS S
DIXON AE
CARVER GE
PENG C
FAUCHET PM
SHAM TK
COULTHARD I
Citation: Ac. Ribes et al., PHOTOLUMINESCENCE IMAGING OF POROUS SILICON USING A CONFOCAL SCANNINGLASER MACROSCOPE MICROSCOPE, Applied physics letters, 66(18), 1995, pp. 2321-2323
Authors:
SHAM TK
COULTHARD I
LORIMER JW
HIRAYA A
WATANABE M
Citation: Tk. Sham et al., REDUCTIVE DEPOSITION OF CU ON POROUS SILICON FROM AQUEOUS-SOLUTIONS -AN X-RAY-ABSORPTION STUDY AT THE CU L3,2-EDGE, Chemistry of materials, 6(11), 1994, pp. 2085-2091
Citation: I. Coulthard et al., REDUCTIVE DEPOSITION OF PD ON POROUS SILICON FROM AQUEOUS-SOLUTIONS OF PDCL2 - AN X-RAY-ABSORPTION FINE-STRUCTURE STUDY, Langmuir, 9(12), 1993, pp. 3441-3445
Authors:
SHAM TK
JIANG DT
COULTHARD I
LORIMER JW
FENG XH
TAN KH
FRIGO SP
ROSENBERG RA
HOUGHTON DC
BRYSKIEWICZ B
Citation: Tk. Sham et al., ORIGIN OF LUMINESCENCE FROM POROUS SILICON DEDUCED BY SYNCHROTRON-LIGHT-INDUCED OPTICAL LUMINESCENCE, Nature, 363(6427), 1993, pp. 331-334
Authors:
JIANG DT
COULTHARD I
SHAM TK
LORIMER JW
FRIGO SP
FENG XH
ROSENBERG RA
Citation: Dt. Jiang et al., OBSERVATIONS ON THE SURFACE AND BULK LUMINESCENCE OF POROUS SILICON, Journal of applied physics, 74(10), 1993, pp. 6335-6340