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Results: 1-18 |
Results: 18

Authors: COVA P SINGH A MEDINA A MASUT RA
Citation: P. Cova et al., EFFECT OF DOPING ON THE FORWARD CURRENT-TRANSPORT MECHANISMS IN A METAL-INSULATOR-SEMICONDUCTOR CONTACT TO INP-ZN GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Solid-state electronics, 42(4), 1998, pp. 477-485

Authors: SALVIATI G ZANOTTIFREGONARA C BORGARINO M LAZZARINI L CATTANI L COVA P MAZZER M
Citation: G. Salviati et al., STUDY OF DEGRADATION MECHANISMS IN COMPOUND SEMICONDUCTOR-BASED DEVICES BY SEM-CATHODOLUMINESCENCE, Microelectronics and reliability, 38(6-8), 1998, pp. 1199-1210

Authors: COVA P FANTINI F
Citation: P. Cova et F. Fantini, ON THE EFFECT OF POWER CYCLING STRESS ON IGBT MODULES, Microelectronics and reliability, 38(6-8), 1998, pp. 1347-1352

Authors: COVA P FANTINI F MANFREDI M
Citation: P. Cova et al., CORRELATION BETWEEN LIGHT-EMISSION AND CURRENTS IN PSEUDOMORPHIC HEMTS, Microelectronics and reliability, 38(4), 1998, pp. 507-510

Authors: COVA P MENOZZI R PAVESI M PAVESI S MANFREDI M FANTINI F
Citation: P. Cova et al., ON THE CORRELATION BETWEEN DRAIN AND GATE CURRENTS AND LIGHT-EMISSIONIN GAAS PHEMTS BIASED IN THE IMPACT IONIZATION REGIME, Journal of physics. D, Applied physics, 31(3), 1998, pp. 276-281

Authors: BORGARINO M MENOZZI R BAEYENS Y COVA P FANTINI F
Citation: M. Borgarino et al., HOT-ELECTRON DEGRADATION OF THE DC AND RF CHARACTERISTICS OF ALGAAS INGAAS/GAAS PHEMTS/, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 366-372

Authors: COVA P MENOZZI R FANTINI F PAVESI M MENEGHESSO G
Citation: P. Cova et al., A STUDY OF HOT-ELECTRON DEGRADATION EFFECTS IN PSEUDOMORPHIC HEMTS, Microelectronics and reliability, 37(7), 1997, pp. 1131-1135

Authors: LABAT N SAYSSET N TOUBOUL A DANTO Y COVA P FANTINI F
Citation: N. Labat et al., ANALYSIS OF HOT-ELECTRON DEGRADATIONS IN PSEUDOMORPHIC HEMTS BY DCTS AND LF NOISE CHARACTERIZATION, Microelectronics and reliability, 37(10-11), 1997, pp. 1675-1678

Authors: COVA P CIAPPA M FRANCESCHINI G MALBERTI P FANTINI F
Citation: P. Cova et al., THERMAL CHARACTERIZATION OF IGBT POWER MODULES, Microelectronics and reliability, 37(10-11), 1997, pp. 1731-1734

Authors: COVA P SINGH A MASUT RA
Citation: P. Cova et al., A SELF-CONSISTENT TECHNIQUE FOR THE ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF A TUNNEL METAL-INSULATOR-SEMICONDUCTOR STRUCTURE, Journal of applied physics, 82(10), 1997, pp. 5217-5226

Authors: MENEGHESSO G CANALI C COVA P DEBORTOLI E ZANONI E
Citation: G. Meneghesso et al., TRAPPED CHARGE MODULATION - A NEW CAUSE OF INSTABILITY IN ALGAAS INGAAS PSEUDOMORPHIC HEMTS/, IEEE electron device letters, 17(5), 1996, pp. 232-234

Authors: MENOZZI R BORGARINO M COVA P BAEYENS Y FANTINI F
Citation: R. Menozzi et al., THE EFFECT OF HOT-ELECTRON STRESS ON THE DC AND MICROWAVE CHARACTERISTICS OF ALGAAS INGAAS/GAAS PHEMTS/, Microelectronics and reliability, 36(11-12), 1996, pp. 1899-1902

Authors: MENOZZI R COVA P
Citation: R. Menozzi et P. Cova, BREAKDOWN WALKOUT IN PSEUDOMORPHIC HEMTS, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 543-546

Authors: SINGH A COVA P MASUT RA
Citation: A. Singh et al., REVERSE IV AND C-V CHARACTERISTICS OF SCHOTTKY-BARRIER TYPE DIODES ONZN DOPED INP EPILAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 76(4), 1994, pp. 2336-2342

Authors: COVA P MASUT RA TRAN CA BENSAADA A CURRIE JF
Citation: P. Cova et al., COMBUSTION OF EFFLUENT GASES FROM A METAL-ORGANIC VAPOR-PHASE EPITAXYSYSTEM, Combustion science and technology, 97(1-3), 1994, pp. 1-11

Authors: MENOZZI R COVA P SELMI L
Citation: R. Menozzi et al., EXPERIMENTAL APPLICATION OF A NOVEL TECHNIQUE TO EXTRACT GATE BIAS DEPENDENT SOURCE AND DRAIN PARASITIC RESISTANCES OF GAAS-MESFETS, Solid-state electronics, 36(7), 1993, pp. 1083-1084

Authors: SINGH A COVA P MASUT RA
Citation: A. Singh et al., ENERGY DENSITY DISTRIBUTION OF INTERFACE STATES IN AU SCHOTTKY CONTACTS TO EPITAXIAL IN0.21GA0.79ASZN LAYERS GROWN ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 74(11), 1993, pp. 6714-6719

Authors: COVA P MASUT RA LACOURSIERE R BENSAADA A TRAN CA CURRIE JF
Citation: P. Cova et al., REMOVAL OF METALLIC HYDRIDES FROM GASEOUS WASTES OF AN LP-MOVPE (LOW-PRESSURE METALLOORGANIC VAPOR-PRESSURE EPITAXY) REACTOR FOR THE GROWTHOF (IN, GA) (AS, P) COMPOUNDS, Canadian journal of physics, 71(7-8), 1993, pp. 307-315
Risultati: 1-18 |