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Results: 1-12 |
Results: 12
LOW-ENERGY BORON IMPLANTATION IN SILICON AND ROOM-TEMPERATURE DIFFUSION
Authors: COLLART EJH WEEMERS K COWERN NEB POLITIEK J BANCKEN PHL VANBERKUM JGM GRAVESTEIJN DJ
Citation: Ejh. Collart et al., LOW-ENERGY BORON IMPLANTATION IN SILICON AND ROOM-TEMPERATURE DIFFUSION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 139(1-4), 1998, pp. 98-107
IS THERE AN EFFECT OF THE PROXIMITY OF A FREE-SURFACE ON THE FORMATION OF END-OF-RANGE DEFECTS
Authors: OMRI M BONAFOS C CLAVERIE A NEJIM A CRISTIANO F ALQUIER D MARTINEZ A COWERN NEB
Citation: M. Omri et al., IS THERE AN EFFECT OF THE PROXIMITY OF A FREE-SURFACE ON THE FORMATION OF END-OF-RANGE DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 5-8
TIME SCALES OF TRANSIENT ENHANCED DIFFUSION - FREE AND CLUSTERED INTERSTITIALS
Authors: COWERN NEB HUIZING HGA STOLK PA VISSER CCG DEKRUIF RCM LARSEN KK PRIVITERA V NANVER LK CRANS W
Citation: Neb. Cowern et al., TIME SCALES OF TRANSIENT ENHANCED DIFFUSION - FREE AND CLUSTERED INTERSTITIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 14-18
DISLOCATION FORMATION AND B TRANSIENT DIFFUSION IN C COIMPLANTED SI
Authors: CACCIATO A KLAPPE JGE COWERN NEB VANDERVOST W BIRO LP CUSTER JS SARIS FW
Citation: A. Cacciato et al., DISLOCATION FORMATION AND B TRANSIENT DIFFUSION IN C COIMPLANTED SI, Journal of applied physics, 79(5), 1996, pp. 2314-2325
ON THE OPTIMIZATION OF SIGE-BASE BIPOLAR-TRANSISTORS
Authors: HUETING RJE SLOTBOOM JW PRUIJMBOOM A DEBOER WB TIMMERING CE COWERN NEB
Citation: Rje. Hueting et al., ON THE OPTIMIZATION OF SIGE-BASE BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1518-1524
ULTRAFAST INTERSTITIAL INJECTION DURING TRANSIENT ENHANCED DIFFUSION OF BORON IN SILICON
Authors: HUIZING HGA VISSER CCG COWERN NEB STOLK PA DEKRUIF RCM
Citation: Hga. Huizing et al., ULTRAFAST INTERSTITIAL INJECTION DURING TRANSIENT ENHANCED DIFFUSION OF BORON IN SILICON, Applied physics letters, 69(9), 1996, pp. 1211-1213
ROLE OF C-CLUSTER AND B-CLUSTER IN TRANSIENT DIFFUSION OF B IN SILICON
Authors: COWERN NEB CACCIATO A CUSTER JS SARIS FW VANDERVORST W
Citation: Neb. Cowern et al., ROLE OF C-CLUSTER AND B-CLUSTER IN TRANSIENT DIFFUSION OF B IN SILICON, Applied physics letters, 68(8), 1996, pp. 1150-1152
DIFFUSION IN STRAINED SI(GE)
Authors: COWERN NEB ZALM PC VANDERSLUIS P GRAVESTEIJN DJ DEBOER WB
Citation: Neb. Cowern et al., DIFFUSION IN STRAINED SI(GE), Physical review letters, 72(16), 1994, pp. 2585-2588
MECHANISMS OF IMPLANT DAMAGE ANNEALING AND TRANSIENT ENHANCED DIFFUSION IN SI
Authors: COWERN NEB VANDEWALLE GFA ZALM PC VANDENHOUDT DWE
Citation: Neb. Cowern et al., MECHANISMS OF IMPLANT DAMAGE ANNEALING AND TRANSIENT ENHANCED DIFFUSION IN SI, Applied physics letters, 65(23), 1994, pp. 2981-2983
INTERSTITIAL TRAPS AND DIFFUSION IN EPITAXIAL SILICON FILMS
Authors: COWERN NEB
Citation: Neb. Cowern, INTERSTITIAL TRAPS AND DIFFUSION IN EPITAXIAL SILICON FILMS, Applied physics letters, 64(20), 1994, pp. 2646-2648
NEW TECHNIQUE FOR MEASURING 2-DIMENSIONAL OXIDATION-ENHANCED DIFFUSION IN SILICON AT LOW-TEMPERATURES
Authors: VANDORT MJ LIFKA H ZALM PC DEBOER WB WOERLEE PH SLOTBOOM JW COWERN NEB
Citation: Mj. Vandort et al., NEW TECHNIQUE FOR MEASURING 2-DIMENSIONAL OXIDATION-ENHANCED DIFFUSION IN SILICON AT LOW-TEMPERATURES, Applied physics letters, 64(16), 1994, pp. 2130-2132
SHALLOW BORON JUNCTIONS AND PREAMORPHIZATION FOR DEEP SUBMICRON SILICON TECHNOLOGY
Authors: WALKER AJ WOERLEE PH POMP HG COWERN NEB
Citation: Aj. Walker et al., SHALLOW BORON JUNCTIONS AND PREAMORPHIZATION FOR DEEP SUBMICRON SILICON TECHNOLOGY, Journal of applied physics, 73(8), 1993, pp. 4048-4053
Risultati: 1-12 |