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Results: 1-25 | 26-29
Results: 1-25/29
IN-SITU DIRECT MEASUREMENT OF ACTIVATION-ENERGIES FOR THE GENERATION OF MISFIT DISLOCATIONS IN THE INGAAS GAAS(001) SYSTEM/
Authors: LACEY G WHITEHOUSE CR PARBROOK PJ CULLIS AG KEIR AM MOCK P JOHNSON AD SMITH GW CLARK GF TANNER BK MARTIN T LUNN B HOGG JHC EMENY MT MURPHY B BENNETT S
Citation: G. Lacey et al., IN-SITU DIRECT MEASUREMENT OF ACTIVATION-ENERGIES FOR THE GENERATION OF MISFIT DISLOCATIONS IN THE INGAAS GAAS(001) SYSTEM/, Applied surface science, 123, 1998, pp. 718-724
PAPERS PRESENTED AT THE 1997 ICAM E-MRS SPRING CONFERENCE, SYMPOSIUM-C - RECENT DEVELOPMENTS IN ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION OF THIN-FILM STRUCTURES, STRASBOURG, FRANCE, JUNE 16-20, 1997 - PREFACE/
Authors: ROCHER AM CULLIS AG KURODA K RANGANATHAN S
Citation: Am. Rocher et al., PAPERS PRESENTED AT THE 1997 ICAM E-MRS SPRING CONFERENCE, SYMPOSIUM-C - RECENT DEVELOPMENTS IN ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION OF THIN-FILM STRUCTURES, STRASBOURG, FRANCE, JUNE 16-20, 1997 - PREFACE/, Thin solid films, 319(1-2), 1998, pp. 9-9
MEASUREMENTS BY X-RAY TOPOGRAPHY OF THE CRITICAL THICKNESS OF ZNSE GROWN ON GAAS
Authors: ODONNELL CB LACEY G HORSBURGH G CULLIS AG WHITEHOUSE CR PARBROOK PJ MEREDITH W GALBRAITH I MOCK P PRIOR KA CAVENETT BC
Citation: Cb. Odonnell et al., MEASUREMENTS BY X-RAY TOPOGRAPHY OF THE CRITICAL THICKNESS OF ZNSE GROWN ON GAAS, Journal of crystal growth, 185, 1998, pp. 95-99
TOPOGRAPHY MEASUREMENTS OF THE CRITICAL THICKNESS OF ZNSE GROWN ON GAAS
Authors: HORSBURGH G PRIOR KA MEREDITH W GALBRAITH I CAVENETT BC WHITEHOUSE CR LACEY G CULLIS AG PARBROOK PJ MOCK P MIZUNO K
Citation: G. Horsburgh et al., TOPOGRAPHY MEASUREMENTS OF THE CRITICAL THICKNESS OF ZNSE GROWN ON GAAS, Applied physics letters, 72(24), 1998, pp. 3148-3150
THE STRUCTURAL AND LUMINESCENCE PROPERTIES OF POROUS SILICON
Authors: CULLIS AG CANHAM LT CALCOTT PDJ
Citation: Ag. Cullis et al., THE STRUCTURAL AND LUMINESCENCE PROPERTIES OF POROUS SILICON, Journal of applied physics, 82(3), 1997, pp. 909-965
OBSERVATION OF VERTICAL AND LATERAL GE SEGREGATION IN THIN UNDULATINGSIGE LAYERS ON SI BY ELECTRON-ENERGY-LOSS SPECTROSCOPY
Authors: WALTHER T HUMPHREYS CJ CULLIS AG
Citation: T. Walther et al., OBSERVATION OF VERTICAL AND LATERAL GE SEGREGATION IN THIN UNDULATINGSIGE LAYERS ON SI BY ELECTRON-ENERGY-LOSS SPECTROSCOPY, Applied physics letters, 71(6), 1997, pp. 809-811
TRANSMISSION ELECTRON-MICROSCOPY OF MICROSTRUCTURE AND NANOSTRUCTURE IN SEMICONDUCTORS
Authors: CULLIS AG
Citation: Ag. Cullis, TRANSMISSION ELECTRON-MICROSCOPY OF MICROSTRUCTURE AND NANOSTRUCTURE IN SEMICONDUCTORS, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 354(1719), 1996, pp. 2635-2651
STRAIN-INDUCED MODULATIONS IN THE SURFACE-MORPHOLOGY OF HETEROEPITAXIAL LAYERS
Authors: CULLIS AG
Citation: Ag. Cullis, STRAIN-INDUCED MODULATIONS IN THE SURFACE-MORPHOLOGY OF HETEROEPITAXIAL LAYERS, MRS bulletin, 21(4), 1996, pp. 21-26
ELECTRONIC-ENERGY LEVELS AND ENERGY RELAXATION MECHANISMS IN SELF-ORGANIZED INAS GAAS QUANTUM DOTS/
Authors: STEER MJ MOWBRAY DJ TRIBE WR SKOLNICK MS STURGE MD HOPKINSON M CULLIS AG WHITEHOUSE CR MURRAY R
Citation: Mj. Steer et al., ELECTRONIC-ENERGY LEVELS AND ENERGY RELAXATION MECHANISMS IN SELF-ORGANIZED INAS GAAS QUANTUM DOTS/, Physical review. B, Condensed matter, 54(24), 1996, pp. 17738-17744
GROWTH-MORPHOLOGY EVOLUTION AND DISLOCATION INTRODUCTION IN THE INGAAS GAAS HETEROEPITAXIAL SYSTEM/
Authors: CULLIS AG PIDDUCK AJ EMENY MT
Citation: Ag. Cullis et al., GROWTH-MORPHOLOGY EVOLUTION AND DISLOCATION INTRODUCTION IN THE INGAAS GAAS HETEROEPITAXIAL SYSTEM/, Journal of crystal growth, 158(1-2), 1996, pp. 15-27
CHEMICAL-BEAM-EPITAXY GROWTH OF INDIUM-CONTAINING III-V COMPOUNDS USING TRIISOPROPYLINDIUM
Authors: FREER RW LANE PA MARTIN T WHITEHOUSE CR WHITAKER TJ WILLIAMS GM CULLIS AG CALCOTT PDJ NASH KD BUCHANNAN H
Citation: Rw. Freer et al., CHEMICAL-BEAM-EPITAXY GROWTH OF INDIUM-CONTAINING III-V COMPOUNDS USING TRIISOPROPYLINDIUM, Journal of applied physics, 79(2), 1996, pp. 917-922
MOLECULAR-DYNAMICS SIMULATIONS OF IMPLANTATION DAMAGE AND RECOVERY INSEMICONDUCTORS
Authors: SAYED M JEFFERSON JH WALKER AB CULLIS AG
Citation: M. Sayed et al., MOLECULAR-DYNAMICS SIMULATIONS OF IMPLANTATION DAMAGE AND RECOVERY INSEMICONDUCTORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 218-222
COMPUTER-SIMULATION OF ATOMIC DISPLACEMENTS IN SI, GAAS, AND ALAS
Authors: SAYED M JEFFERSON JH WALKER AB CULLIS AG
Citation: M. Sayed et al., COMPUTER-SIMULATION OF ATOMIC DISPLACEMENTS IN SI, GAAS, AND ALAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 102(1-4), 1995, pp. 232-235
MISFIT DISLOCATION SOURCES AT SURFACE RIPPLE TROUGHS IN CONTINUOUS HETEROEPITAXIAL LAYERS
Authors: CULLIS AG PIDDUCK AJ EMENY MT
Citation: Ag. Cullis et al., MISFIT DISLOCATION SOURCES AT SURFACE RIPPLE TROUGHS IN CONTINUOUS HETEROEPITAXIAL LAYERS, Physical review letters, 75(12), 1995, pp. 2368-2371
IN-SITU X-RAY TOPOGRAPHY STUDIES DURING THE MOLECULAR-BEAM EPITAXY GROWTH OF INGAAS ON (001) GAAS - EFFECTS OF SUBSTRATE DISLOCATION DISTRIBUTION ON STRAIN RELAXATION
Authors: BARNETT SJ KEIR AM CULLIS AG JOHNSON AD JEFFERSON J SMITH GW MARTIN T WHITEHOUSE CR LACEY G CLARK GF TANNER BK SPIRKL W LUNN B HOGG JCH ASHU P HAGSTON WE CASTELLI CM
Citation: Sj. Barnett et al., IN-SITU X-RAY TOPOGRAPHY STUDIES DURING THE MOLECULAR-BEAM EPITAXY GROWTH OF INGAAS ON (001) GAAS - EFFECTS OF SUBSTRATE DISLOCATION DISTRIBUTION ON STRAIN RELAXATION, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 17-22
IN-SITU X-RAY-IMAGING OF III-V STRAINED-LAYER RELAXATION PROCESSES
Authors: WHITEHOUSE CR CULLIS AG BARNETT SJ USHER BF CLARK GF KEIR AM TANNER BK LUNN B HOGG JCH JOHNSON AD LACEY G SPIRKL W HAGSTON WE JEFFERSON JH ASHU P SMITH GW
Citation: Cr. Whitehouse et al., IN-SITU X-RAY-IMAGING OF III-V STRAINED-LAYER RELAXATION PROCESSES, Journal of crystal growth, 150(1-4), 1995, pp. 85-91
MOLECULAR-DYNAMICS SIMULATION OF (100)INGAAS GAAS STRAINED-LAYER RELAXATION PROCESSES/
Authors: ASHU PA JEFFERSON JH CULLIS AG HAGSTON WE WHITEHOUSE CR
Citation: Pa. Ashu et al., MOLECULAR-DYNAMICS SIMULATION OF (100)INGAAS GAAS STRAINED-LAYER RELAXATION PROCESSES/, Journal of crystal growth, 150(1-4), 1995, pp. 176-179
THE MORPHOLOGY AND MISFIT DISLOCATION FORMATION CHARACTERISTICS OF STRAINED HETEROEPITAXIAL LAYERS - EX-SITU AND IN-SITU GROWTH-STUDIES
Authors: CULLIS AG
Citation: Ag. Cullis, THE MORPHOLOGY AND MISFIT DISLOCATION FORMATION CHARACTERISTICS OF STRAINED HETEROEPITAXIAL LAYERS - EX-SITU AND IN-SITU GROWTH-STUDIES, Scanning microscopy, 8(4), 1994, pp. 957-967
GROWTH RIPPLES UPON STRAINED SIGE EPITAXIAL LAYERS ON SI AND MISFIT DISLOCATION INTERACTIONS
Authors: CULLIS AG ROBBINS DJ BARNETT SJ PIDDUCK AJ
Citation: Ag. Cullis et al., GROWTH RIPPLES UPON STRAINED SIGE EPITAXIAL LAYERS ON SI AND MISFIT DISLOCATION INTERACTIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1924-1931
DISLOCATION CONTRAST IN X-RAY REFLECTION TOPOGRAPHY OF STRAINED HETEROSTRUCTURES
Authors: SPIRKL W TANNER BK WHITEHOUSE C BARNETT SJ CULLIS AG JOHNSON AD KEIR A USHER B CLARK GF HAGSTON W HOGG CR LUNN B
Citation: W. Spirkl et al., DISLOCATION CONTRAST IN X-RAY REFLECTION TOPOGRAPHY OF STRAINED HETEROSTRUCTURES, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 70(3), 1994, pp. 531-548
SIMULATION OF X-RAY REFLECTION TOPOGRAPHS FROM MISFIT DISLOCATIONS
Authors: SPIRKL W TANNER BK WHITEHOUSE C BARNETT SJ CULLIS AG JOHNSON AD KEIR A USHER B CLARK GE HAGSTON W HOGG CR LUNN B
Citation: W. Spirkl et al., SIMULATION OF X-RAY REFLECTION TOPOGRAPHS FROM MISFIT DISLOCATIONS, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 69(1), 1994, pp. 221-236
LUMINESCENT ANODIZED SILICON AEROCRYSTAL NETWORKS PREPARED BY SUPERCRITICAL DRYING
Authors: CANHAM LT CULLIS AG PICKERING C DOSSER OD COX TI LYNCH TP
Citation: Lt. Canham et al., LUMINESCENT ANODIZED SILICON AEROCRYSTAL NETWORKS PREPARED BY SUPERCRITICAL DRYING, Nature, 368(6467), 1994, pp. 133-135
LASER-INDUCED DOPING PROFILES IN MOLECULAR-BEAM EPITAXY-GROWN ZNSE DOPED WITH IODINE
Authors: MULLINS JT HORSBURGH G SIMPSON J THOMPSON P TAGHIZADEH MR HAUKSSON I WANG SY PRIOR KA CAVENETT BC WILLIAMS GM CULLIS AG
Citation: Jt. Mullins et al., LASER-INDUCED DOPING PROFILES IN MOLECULAR-BEAM EPITAXY-GROWN ZNSE DOPED WITH IODINE, Journal of crystal growth, 138(1-4), 1994, pp. 357-361
SOLID-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAINP AND GAINP-CONTAINING QUANTUM-WELLS
Authors: MOWBRAY DJ KOWALSKI OP SKOLNICK MS DELONG MC HOPKINSON M DAVID JPR CULLIS AG
Citation: Dj. Mowbray et al., SOLID-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAINP AND GAINP-CONTAINING QUANTUM-WELLS, Journal of applied physics, 75(4), 1994, pp. 2029-2034
ATOMIC ORDERING AND DOMAIN-STRUCTURES IN METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN INGAAS (001) LAYERS
Authors: SEONG TY NORMAN AG BOOKER GR CULLIS AG
Citation: Ty. Seong et al., ATOMIC ORDERING AND DOMAIN-STRUCTURES IN METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN INGAAS (001) LAYERS, Journal of applied physics, 75(12), 1994, pp. 7852-7868
Risultati: 1-25 | 26-29