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Authors: BERTRU N BARANOV A CUMINAL Y ALMUNEAU G GENTY F JOULLIE A BRANDT O MAZUELAS A PLOOG KH
Citation: N. Bertru et al., LONG-WAVELENGTH (GA, IN)SB GASB STRAINED-QUANTUM-WELL LASERS GROWN BYMOLECULAR-BEAM EPITAXY/, Semiconductor science and technology, 13(8), 1998, pp. 936-940

Authors: NICOLAS JC BARANOV AN CUMINAL Y ROUILLARD Y ALIBERT C
Citation: Jc. Nicolas et al., TUNABLE DIODE-LASER ABSORPTION-SPECTROSCOPY OF CARBON-MONOXIDE AROUND2.35 MU-M, Applied optics, 37(33), 1998, pp. 7906-7911

Authors: BARANOV AN BERTRU N CUMINAL Y BOISSIER G ALIBERT C JOULLIE A
Citation: An. Baranov et al., OBSERVATION OF ROOM-TEMPERATURE LASER-EMISSION FROM TYPE-III INAS GASB MULTIPLE-QUANTUM-WELL STRUCTURES/, Applied physics letters, 71(6), 1997, pp. 735-737

Authors: BARANOV AN CUMINAL Y BOISSIER G NICOLAS JC LAZZARI JL ALIBERT C JOULLIE A
Citation: An. Baranov et al., ELECTROLUMINESCENCE OF GAINSB GASB STRAINED SINGLE-QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Semiconductor science and technology, 11(8), 1996, pp. 1185-1188

Authors: BARANOV AN CUMINAL Y BOISSIER G ALIBERT C JOULLIE A
Citation: An. Baranov et al., LOW-THRESHOLD LASER-DIODES BASED ON TYPE-II GAINASSB GASB QUANTUM-WELLS OPERATING AT 2.36 MU-M AT ROOM-TEMPERATURE/, Electronics Letters, 32(24), 1996, pp. 2279-2280
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