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Results: 1-11 |
Results: 11
GROWTH AND CHARACTERIZATION OF N-TYPE GAAS ALGAAS QUANTUM-WELL INFRARED PHOTODETECTOR ON GAAS-ON-SI SUBSTRATE/
Authors: SENGUPTA DK WEISMAN MB FENG M CHUANG SL CHANG YC COOPER L ADESIDA I BLOOM I HSIEH KC FANG W MALIN JI CURTIS AP HORTON T STILLMAN GE GUNAPALA SD BANDARA SV POOL F LIU JK MCKELVEY M LUONG E HONG W MUMOLO J LIU HC WANG WI
Citation: Dk. Sengupta et al., GROWTH AND CHARACTERIZATION OF N-TYPE GAAS ALGAAS QUANTUM-WELL INFRARED PHOTODETECTOR ON GAAS-ON-SI SUBSTRATE/, Journal of electronic materials, 27(7), 1998, pp. 858-865
LOW-TEMPERATURE PHOTOLUMINESCENCE STUDY ON ER-DOPED GAP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: FUJIWARA Y CURTIS AP STILLMAN GE MATSUBARA N TAKEDA Y
Citation: Y. Fujiwara et al., LOW-TEMPERATURE PHOTOLUMINESCENCE STUDY ON ER-DOPED GAP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of applied physics, 83(9), 1998, pp. 4902-4908
GROWTH AND CHARACTERIZATION OF N-TYPE INP INGAAS QUANTUM-WELL INFRARED PHOTODETECTORS FOR RESPONSE AT 8.93 MU-M/
Authors: SENGUPTA DK JACKSON SL CURTIS AP FANG W MALIN JI HORTON TU HARTMAN Q KUO HC THOMAS S MILLER J HSIEH KC ADESIDA I CHUANG SL FENG M STILLMAN GE CHANG YC WU W TUCKER J CHEN H GIBSON JM MAZUMDER J LI L LIU HC
Citation: Dk. Sengupta et al., GROWTH AND CHARACTERIZATION OF N-TYPE INP INGAAS QUANTUM-WELL INFRARED PHOTODETECTORS FOR RESPONSE AT 8.93 MU-M/, Journal of electronic materials, 26(12), 1997, pp. 1376-1381
GROWTH AND CHARACTERIZATION OF INGAAS INP P-QUANTUM-WELL INFRARED PHOTODETECTORS WITH EXTREMELY THIN QUANTUM-WELLS/
Authors: SENGUPTA DK JACKSON SL CURTIS AP FANG W MALIN JI HORTON TU KUO HC MOY A MILLER J HSIEH KC CHENG KY CHEN H ADESIDA I CHUANG SL FENG M STILLMAN GE WU W TUCKER J CHANG YC LI L LIU HC
Citation: Dk. Sengupta et al., GROWTH AND CHARACTERIZATION OF INGAAS INP P-QUANTUM-WELL INFRARED PHOTODETECTORS WITH EXTREMELY THIN QUANTUM-WELLS/, Journal of electronic materials, 26(12), 1997, pp. 1382-1388
EFFECTS OF RAPID THERMAL ANNEALING ON THE DEVICE CHARACTERISTICS OF QUANTUM-WELL INFRARED PHOTODETECTORS
Authors: SENGUPTA DK FANG W MALIN JI CURTIS AP HORTON T KUO HC TURNBULL D LIN CH LI J HSIEH KC CHUANG SL ADESIDA I FENG M BISHOP SG STILLMAN GE GIBSON JM CHEN H MAZUMDER J LIU HC
Citation: Dk. Sengupta et al., EFFECTS OF RAPID THERMAL ANNEALING ON THE DEVICE CHARACTERISTICS OF QUANTUM-WELL INFRARED PHOTODETECTORS, Journal of electronic materials, 26(1), 1997, pp. 43-51
LUMINESCENCE CHARACTERISTICS OF INALP-INGAP HETEROSTRUCTURES HAVING NATIVE-OXIDE WINDOWS
Authors: ISLAM MR DUPUIS RD HOLMES AL CURTIS AP GARDNER NF STILLMAN GE BAKER JE HULL R
Citation: Mr. Islam et al., LUMINESCENCE CHARACTERISTICS OF INALP-INGAP HETEROSTRUCTURES HAVING NATIVE-OXIDE WINDOWS, Journal of crystal growth, 170(1-4), 1997, pp. 413-417
GAAS ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORS ON GAAS-ON-SI SUBSTRATES/
Authors: SENGUPTA DK FANG W MALIN JI LI J HORTON T CURTIS AP HSIEH KC CHUANG SL CHEN H FENG M STILLMAN GE LI L LIU HC BANDARA KMSV GUNAPALA SD WANG WI
Citation: Dk. Sengupta et al., GAAS ALGAAS QUANTUM-WELL INFRARED PHOTODETECTORS ON GAAS-ON-SI SUBSTRATES/, Applied physics letters, 71(1), 1997, pp. 78-80
SEMIINSULATING IN0.49GA0.51P GROWN AT REDUCED SUBSTRATE-TEMPERATURE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: HARTMANN QJ GARDNER NF HORTON TU CURTIS AP AHMARI DA FRESINA MT BAKER JE STILLMAN GE
Citation: Qj. Hartmann et al., SEMIINSULATING IN0.49GA0.51P GROWN AT REDUCED SUBSTRATE-TEMPERATURE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 70(14), 1997, pp. 1822-1824
ENHANCED LUMINESCENCE FROM INALP-INGAP QUANTUM-WELLS WITH NATIVE-OXIDE WINDOWS
Authors: ISLAM MR DUPUIS RD HOLMES AL GARDNER NF CURTIS AP STILLMAN GE BAKER JE
Citation: Mr. Islam et al., ENHANCED LUMINESCENCE FROM INALP-INGAP QUANTUM-WELLS WITH NATIVE-OXIDE WINDOWS, Electronics Letters, 32(4), 1996, pp. 401-402
EFFECTS OF THERMALLY GROWN NATIVE OXIDES ON THE LUMINESCENCE PROPERTIES OF COMPOUND SEMICONDUCTORS
Authors: ISLAM MR DUPUIS RD CURTIS AP STILLMAN GE
Citation: Mr. Islam et al., EFFECTS OF THERMALLY GROWN NATIVE OXIDES ON THE LUMINESCENCE PROPERTIES OF COMPOUND SEMICONDUCTORS, Applied physics letters, 69(7), 1996, pp. 946-948
ZERO-FIELD TIME-OF-FLIGHT CHARACTERIZATION OF MINORITY-CARRIER TRANSPORT IN HEAVILY CARBON-DOPED GAAS
Authors: COLOMB CM STOCKMAN SA GARDNER NF CURTIS AP STILLMAN GE LOW TS MARS DE DAVITO DB
Citation: Cm. Colomb et al., ZERO-FIELD TIME-OF-FLIGHT CHARACTERIZATION OF MINORITY-CARRIER TRANSPORT IN HEAVILY CARBON-DOPED GAAS, Journal of applied physics, 73(11), 1993, pp. 7471-7477
Risultati: 1-11 |