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Results: 1-19 |
Results: 19
GROWTH AND PROPERTIES OF W-SI-N DIFFUSION-BARRIERS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION
Authors: FLEMING JG ROHERTYOSMUN E SMITH PM CUSTER JS KIM YD KACSICH T NICOLET MA GALEWSKI CJ
Citation: Jg. Fleming et al., GROWTH AND PROPERTIES OF W-SI-N DIFFUSION-BARRIERS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 320(1), 1998, pp. 10-14
UZHOROD, BALAMAND, AND BEYOND - A UNIATE LOOKS TO THE MILLENNIUM( RUTHENIAN BYZANTINE CATHOLICS FACING THE CHALLENGE OF INCULTURATION AND EVANGELIZATION )
Authors: CUSTER JS
Citation: Js. Custer, UZHOROD, BALAMAND, AND BEYOND - A UNIATE LOOKS TO THE MILLENNIUM( RUTHENIAN BYZANTINE CATHOLICS FACING THE CHALLENGE OF INCULTURATION AND EVANGELIZATION ), Journal of ecumenical studies, 34(2), 1997, pp. 190-201
SEGREGATION AND TRAPPING OF ERBIUM AT A MOVING CRYSTAL-AMORPHOUS SI INTERFACE
Authors: POLMAN A CUSTER JS ZAGWIJN PM MOLENBROEK AM ALKEMADE PFA
Citation: A. Polman et al., SEGREGATION AND TRAPPING OF ERBIUM AT A MOVING CRYSTAL-AMORPHOUS SI INTERFACE, Journal of applied physics, 81(1), 1997, pp. 150-153
CHEMICAL-VAPOR-DEPOSITION OF TITANIUM-SILICON-NITRIDE FILMS
Authors: SMITH PM CUSTER JS
Citation: Pm. Smith et Js. Custer, CHEMICAL-VAPOR-DEPOSITION OF TITANIUM-SILICON-NITRIDE FILMS, Applied physics letters, 70(23), 1997, pp. 3116-3118
DISLOCATION FORMATION AND B TRANSIENT DIFFUSION IN C COIMPLANTED SI
Authors: CACCIATO A KLAPPE JGE COWERN NEB VANDERVOST W BIRO LP CUSTER JS SARIS FW
Citation: A. Cacciato et al., DISLOCATION FORMATION AND B TRANSIENT DIFFUSION IN C COIMPLANTED SI, Journal of applied physics, 79(5), 1996, pp. 2314-2325
ROLE OF C-CLUSTER AND B-CLUSTER IN TRANSIENT DIFFUSION OF B IN SILICON
Authors: COWERN NEB CACCIATO A CUSTER JS SARIS FW VANDERVORST W
Citation: Neb. Cowern et al., ROLE OF C-CLUSTER AND B-CLUSTER IN TRANSIENT DIFFUSION OF B IN SILICON, Applied physics letters, 68(8), 1996, pp. 1150-1152
AVOIDING END-OF-RANGE DISLOCATIONS IN ION-IMPLANTED SILICON
Authors: ACCO S CUSTER JS SARIS FW
Citation: S. Acco et al., AVOIDING END-OF-RANGE DISLOCATIONS IN ION-IMPLANTED SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 34(2-3), 1995, pp. 168-174
ERBIUM IN CRYSTAL SILICON - OPTICAL ACTIVATION, EXCITATION, AND CONCENTRATION LIMITS
Authors: POLMAN A VANDENHOVEN GN CUSTER JS SHIN JH SERNA R ALKEMADE PFA
Citation: A. Polman et al., ERBIUM IN CRYSTAL SILICON - OPTICAL ACTIVATION, EXCITATION, AND CONCENTRATION LIMITS, Journal of applied physics, 77(3), 1995, pp. 1256-1262
TIME EVOLUTION OF DISLOCATION FORMATION IN ION-IMPLANTED SILICON
Authors: LIEFTING JR CUSTER JS SARIS FW
Citation: Jr. Liefting et al., TIME EVOLUTION OF DISLOCATION FORMATION IN ION-IMPLANTED SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 25(1), 1994, pp. 60-67
SIMILAR POINT-DEFECTS IN CRYSTALLINE AND AMORPHOUS-SILICON
Authors: LIANG ZN NIESEN L VANDENHOVEN GN CUSTER JS
Citation: Zn. Liang et al., SIMILAR POINT-DEFECTS IN CRYSTALLINE AND AMORPHOUS-SILICON, Physical review. B, Condensed matter, 49(23), 1994, pp. 16331-16337
THERMODYNAMIC STABILITY OF IRON NITRIDES AT TEMPERATURES BELOW 350-DEGREES-C
Authors: DEWIT L WEBER T CUSTER JS SARIS FW
Citation: L. Dewit et al., THERMODYNAMIC STABILITY OF IRON NITRIDES AT TEMPERATURES BELOW 350-DEGREES-C, Physical review letters, 72(24), 1994, pp. 3835-3838
ERBIUM IN CRYSTAL SILICON - SEGREGATION AND TRAPPING DURING SOLID-PHASE EPITAXY OF AMORPHOUS-SILICON
Authors: CUSTER JS POLMAN A VANPINXTEREN HM
Citation: Js. Custer et al., ERBIUM IN CRYSTAL SILICON - SEGREGATION AND TRAPPING DURING SOLID-PHASE EPITAXY OF AMORPHOUS-SILICON, Journal of applied physics, 75(6), 1994, pp. 2809-2817
IMPROVED DEVICE PERFORMANCE BY MULTISTEP OR CARBON CO-IMPLANTS
Authors: LIEFTING R WIJBURG RCM CUSTER JS WALLINGA H SARIS FW
Citation: R. Liefting et al., IMPROVED DEVICE PERFORMANCE BY MULTISTEP OR CARBON CO-IMPLANTS, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 50-55
DENSITY OF AMORPHOUS SI
Authors: CUSTER JS THOMPSON MO JACOBSON DC POATE JM ROORDA S SINKE WC SPAEPEN F
Citation: Js. Custer et al., DENSITY OF AMORPHOUS SI, Applied physics letters, 64(4), 1994, pp. 437-439
INTERFACE ROUGHNESS DURING THERMAL AND ION-INDUCED REGROWTH OF AMORPHOUS LAYERS ON SI(001)
Authors: LOHMEIER M DEVRIES S CUSTER JS VLIEG E FINNEY MS PRIOLO F BATTAGLIA A
Citation: M. Lohmeier et al., INTERFACE ROUGHNESS DURING THERMAL AND ION-INDUCED REGROWTH OF AMORPHOUS LAYERS ON SI(001), Applied physics letters, 64(14), 1994, pp. 1803-1805
CARBIDE AND NITRIDE CARBIDE LAYERS IN IRON SYNTHESIZED BY ION-IMPLANTATION
Authors: PEREZMARTIN AMC VREDENBERG AM DEWIT L CUSTER JS
Citation: Amc. Perezmartin et al., CARBIDE AND NITRIDE CARBIDE LAYERS IN IRON SYNTHESIZED BY ION-IMPLANTATION, Materials science & engineering. B, Solid-state materials for advanced technology, 19(3), 1993, pp. 281-284
INTERFACE STRUCTURE DURING ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATIONOF SILICON
Authors: CUSTER JS BATTAGLIA A SAGGIO M PRIOLO F
Citation: Js. Custer et al., INTERFACE STRUCTURE DURING ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATIONOF SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 881-885
OPTICAL DOPING OF SILICON WITH ERBIUM BY ION-IMPLANTATION
Authors: POLMAN A CUSTER JS SNOEKS E VANDENHOVEN GN
Citation: A. Polman et al., OPTICAL DOPING OF SILICON WITH ERBIUM BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 653-658
ELECTRICALLY ACTIVE, ION-IMPLANTED BORON AT THE SOLUBILITY LIMIT IN SILICON
Authors: LIEFTING JR SCHREUTELKAMP RJ VANHELLEMONT J VANDERVORST W MAEX K CUSTER JS SARIS FW
Citation: Jr. Liefting et al., ELECTRICALLY ACTIVE, ION-IMPLANTED BORON AT THE SOLUBILITY LIMIT IN SILICON, Applied physics letters, 63(8), 1993, pp. 1134-1136
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