ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

Oxidation of ion implanted silicon carbide

Authors: Makhtari, A Raineri, V La Via, F Franzo, G Frisina, F Calcagno, L

Citation: A. Makhtari et al., Oxidation of ion implanted silicon carbide, MAT SC S PR, 4(4), 2001, pp. 345-349

Carrier concentration profiles in 6H-SiC by scanning capacitance microscopy

Authors: Giannazzo, F Musumeci, P Calcagno, L Makhtari, A Raineri, V

Citation: F. Giannazzo et al., Carrier concentration profiles in 6H-SiC by scanning capacitance microscopy, MAT SC S PR, 4(1-3), 2001, pp. 195-199

Infrared spectroscopy and transmission electron microscopy of polycrystalline silicon carbide

Authors: Dkaki, M Calcagno, L Makthari, AM Raineri, V

Citation: M. Dkaki et al., Infrared spectroscopy and transmission electron microscopy of polycrystalline silicon carbide, MAT SC S PR, 4(1-3), 2001, pp. 201-204

Structural characterisation of titanium silicon carbide reaction

Authors: Makhtari, A La Via, F Raineri, V Calcagno, L Frisina, F

Citation: A. Makhtari et al., Structural characterisation of titanium silicon carbide reaction, MICROEL ENG, 55(1-4), 2001, pp. 375-381

Growth and characterization of SiC layers obtained by microwave-CVD

Authors: Mandracci, P Ferrero, S Cicero, G Giorgis, F Pirri, CF Barucca, G Reitano, R Musumeci, P Calcagno, L Foti, G

Citation: P. Mandracci et al., Growth and characterization of SiC layers obtained by microwave-CVD, THIN SOL FI, 383(1-2), 2001, pp. 169-171

Quantitative carrier profiling in ion-implanted 6H-SiC

Authors: Giannazzo, F Calcagno, L Raineri, V Ciampolini, L Ciappa, M Napolitani, E

Citation: F. Giannazzo et al., Quantitative carrier profiling in ion-implanted 6H-SiC, APPL PHYS L, 79(8), 2001, pp. 1211-1213

Ion-beam processing of hydrogenated amorphous silicon carbide grown by plasma-enhanced chemical vapour deposition

Authors: Calcagno, L Giorgis, F Makhtari, A Musumeci, P Reitano, R

Citation: L. Calcagno et al., Ion-beam processing of hydrogenated amorphous silicon carbide grown by plasma-enhanced chemical vapour deposition, PHIL MAG B, 80(4), 2000, pp. 539-546

Enhanced oxidation of ion-damaged 6H-SiC

Authors: Makhtari, A Raineri, V Calcagno, L La Via, F Frisina, F Foti, G

Citation: A. Makhtari et al., Enhanced oxidation of ion-damaged 6H-SiC, PHIL MAG B, 80(4), 2000, pp. 661-667

Ion beam effects on the hydrogenated bonds of amorphous silicon carbide

Authors: Musumeci, P Calcagno, L Makhtari, A Baeri, P Compagnini, G Pirri, CF

Citation: P. Musumeci et al., Ion beam effects on the hydrogenated bonds of amorphous silicon carbide, NUCL INST B, 166, 2000, pp. 404-409

Compositional and structural properties of deuterated plasma enhanced chemical vapour deposited silicon-carbon alloys

Authors: Calcagno, L Giorgis, F Makthari, A Musumeci, P Pirri, F

Citation: L. Calcagno et al., Compositional and structural properties of deuterated plasma enhanced chemical vapour deposited silicon-carbon alloys, PHIL MAG B, 79(10), 1999, pp. 1685-1694

Ion beam irradiation of relaxed amorphous silicon carbide

Authors: Calcagno, L Musumeci, P Grimaldi, MG

Citation: L. Calcagno et al., Ion beam irradiation of relaxed amorphous silicon carbide, NUCL INST B, 148(1-4), 1999, pp. 583-588

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