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Results: 1-11 |
Results: 11
Interface modification of ultrathin SiO2/Si(001) by nitric oxide treatments: a comparative electron paramagnetic resonance and nuclear reaction analysis study
Authors: Cantin, JL von Bardeleben, HJ Gosset, LG Ganem, JJ Trimaille, I
Citation: Jl. Cantin et al., Interface modification of ultrathin SiO2/Si(001) by nitric oxide treatments: a comparative electron paramagnetic resonance and nuclear reaction analysis study, J NON-CRYST, 280(1-3), 2001, pp. 143-149
Spins and microstructure of hydrogenated amorphous carbon: A multiple frequency electron paramagnetic resonance study
Authors: von Bardeleben, HJ Cantin, JL Zeinert, A Racine, B Zellama, K Hai, PN
Citation: Hj. Von Bardeleben et al., Spins and microstructure of hydrogenated amorphous carbon: A multiple frequency electron paramagnetic resonance study, APPL PHYS L, 78(19), 2001, pp. 2843-2845
Pore propagation directions in p(+) porous silicon
Authors: Vazsonyi, E Battistig, G Horvath, ZE Fried, M Kadar, G Paszti, F Cantin, JL Vanhaeren, D Stalmans, L Poortmans, J
Citation: E. Vazsonyi et al., Pore propagation directions in p(+) porous silicon, J POROUS MA, 7(1-3), 2000, pp. 57-61
SB7: the new bending-magnet double-headed dragon beamline at SuperACO
Authors: Sirotti, F Polack, F Cantin, JL Sacchi, M Delaunay, R Meyer, M Liberati, M
Citation: F. Sirotti et al., SB7: the new bending-magnet double-headed dragon beamline at SuperACO, J SYNCHROTR, 7, 2000, pp. 5-11
Vacancy defects in p-type 6H-SiC created by low-energy electron irradiation
Authors: von Bardeleben, HJ Cantin, JL Henry, L Barthe, MF
Citation: Hj. Von Bardeleben et al., Vacancy defects in p-type 6H-SiC created by low-energy electron irradiation, PHYS REV B, 62(16), 2000, pp. 10841-10846
Proton-implantation-induced defects in n-type 6H- and 4H-SiC: An electron paramagnetic resonance study
Authors: von Bardeleben, HJ Cantin, JL Vickridge, I Battistig, G
Citation: Hj. Von Bardeleben et al., Proton-implantation-induced defects in n-type 6H- and 4H-SiC: An electron paramagnetic resonance study, PHYS REV B, 62(15), 2000, pp. 10126-10134
Defect studies in epitaxial SiC-6H layers on insulator (SiCOI)
Authors: Hugonnard-Bruyere, E Cantin, JL von Bardeleben, HJ Letertre, F DiCioccio, L Ouisse, T
Citation: E. Hugonnard-bruyere et al., Defect studies in epitaxial SiC-6H layers on insulator (SiCOI), MICROEL ENG, 48(1-4), 1999, pp. 277-280
Electron-paramagnetic-resonance study of the (100)Si/Si3N4 interface
Authors: Aubert, P von Bardeleben, HJ Delmotte, F Cantin, JL Hugon, MC
Citation: P. Aubert et al., Electron-paramagnetic-resonance study of the (100)Si/Si3N4 interface, PHYS REV B, 59(16), 1999, pp. 10677-10684
Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2
Authors: von Bardeleben, HJ Cantin, JL Gosset, LG Ganem, JJ Trimaille, I Rigo, S
Citation: Hj. Von Bardeleben et al., Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2, J NON-CRYST, 245, 1999, pp. 169-174
Temperature effects on the Si/SiO2 interface defects and suboxide distribution
Authors: Jolly, F Cantin, JL Rochet, F Dufour, G von Bardeleben, HJ
Citation: F. Jolly et al., Temperature effects on the Si/SiO2 interface defects and suboxide distribution, J NON-CRYST, 245, 1999, pp. 217-223
Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations
Authors: Gosset, LG Ganem, JJ von Bardeleben, HJ Rigo, S Trimaille, I Cantin, JL Akermark, T Vickridge, IC
Citation: Lg. Gosset et al., Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations, J APPL PHYS, 85(7), 1999, pp. 3661-3665
Risultati: 1-11 |