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Results: 1-15 |
Results: 15
Bulk Bridgman growth of cadmium mercury telluride for IR applications
Authors: Capper, P
Citation: P. Capper, Bulk Bridgman growth of cadmium mercury telluride for IR applications, J MAT S-M E, 12(8), 2001, pp. 423-428
Editorial comments for MEL BACG 2000 Proceedings
Authors: Capper, P
Citation: P. Capper, Editorial comments for MEL BACG 2000 Proceedings, J MAT S-M E, 12(8), 2001, pp. III-III
Growth of long wavelength infrared MCT emitters on conductive substrates
Authors: Maxey, CD Ahmed, MU Jones, CL Catchpole, RA Capper, P Gordon, NT Houlton, M Ashley, T
Citation: Cd. Maxey et al., Growth of long wavelength infrared MCT emitters on conductive substrates, J ELEC MAT, 30(6), 2001, pp. 723-727
Proceedings of the First Asian Conference on Crystal Growth and Crystal Technology Sendai, Japan, 29 August-1 September 2000 - Editors' preface
Authors: Nakajima, K Durbin, SD Capper, P Hiyamizu, S
Citation: K. Nakajima et al., Proceedings of the First Asian Conference on Crystal Growth and Crystal Technology Sendai, Japan, 29 August-1 September 2000 - Editors' preface, J CRYST GR, 229(1), 2001, pp. XIII-XIII
Investigation of parameters to obtain reduced Shockley-Read traps and nearradiatively limited lifetimes in MOVPE-grown MCT
Authors: Maxey, CD Ahmed, MU Capper, P Jones, CL Gordon, NT White, M
Citation: Cd. Maxey et al., Investigation of parameters to obtain reduced Shockley-Read traps and nearradiatively limited lifetimes in MOVPE-grown MCT, J MAT S-M E, 11(7), 2000, pp. 565-568
Editorial comments for Mel Bacg 1999 Proceedings
Authors: Capper, P
Citation: P. Capper, Editorial comments for Mel Bacg 1999 Proceedings, J MAT S-M E, 11(7), 2000, pp. III-III
Conductivity type conversion in Hg1-xCdxTe
Authors: Shaw, D Capper, P
Citation: D. Shaw et P. Capper, Conductivity type conversion in Hg1-xCdxTe, J MAT S-M E, 11(2), 2000, pp. 169-177
Use of near-infrared as a screening technique for CdZnTe substrates
Authors: Gower, JE Maxey, CD Capper, P O'Keefe, ES Skauli, T
Citation: Je. Gower et al., Use of near-infrared as a screening technique for CdZnTe substrates, J MAT S-M E, 10(8), 1999, pp. 589-593
Editorial comments for MEL BACG 1998 Proceedings
Authors: Capper, P
Citation: P. Capper, Editorial comments for MEL BACG 1998 Proceedings, J MAT S-M E, 10(8), 1999, pp. III-III
Minority carrier diffusion length in undoped p-type epitaxially grown CdxHg1-xTe
Authors: Barton, SC Hastings, M Jones, CL Capper, P Metcalfe, N
Citation: Sc. Barton et al., Minority carrier diffusion length in undoped p-type epitaxially grown CdxHg1-xTe, J MAT S-M E, 10(2), 1999, pp. 155-159
Diode R(0)A in p-type epitaxially grown undoped CdxHg1-xTe
Authors: Barton, SC Hastings, M Jones, CL Capper, P Metcalfe, N
Citation: Sc. Barton et al., Diode R(0)A in p-type epitaxially grown undoped CdxHg1-xTe, J MAT S-M E, 10(2), 1999, pp. 161-166
Low temperature thermal annealing effects in bulk and epitaxial CdxHg1-xTe
Authors: Capper, P Maxey, CD Jones, CL Gower, JE O'Keefe, ES Shaw, D
Citation: P. Capper et al., Low temperature thermal annealing effects in bulk and epitaxial CdxHg1-xTe, J ELEC MAT, 28(6), 1999, pp. 637-648
Zn concentration determination in CdZnTe by NIR spectroscopy
Authors: Maxey, CD Gower, JE Capper, P O'Keefe, ES Skauli, T Ard, CK
Citation: Cd. Maxey et al., Zn concentration determination in CdZnTe by NIR spectroscopy, J CRYST GR, 197(3), 1999, pp. 427-434
Sulphur diffusion in CdTe and the phase diagram of the CdS-CdTe pseudo-binary alloy
Authors: Lane, DW Conibeer, GJ Wood, DA Rogers, KD Capper, P Romani, S Hearne, S
Citation: Dw. Lane et al., Sulphur diffusion in CdTe and the phase diagram of the CdS-CdTe pseudo-binary alloy, J CRYST GR, 197(3), 1999, pp. 743-748
Characterization of CdTe, Cd0.96Zn0.04 and Zn-diffused CdTe by defect etching
Authors: Clark, JC Jones, ED Capper, P Mullin, JB
Citation: Jc. Clark et al., Characterization of CdTe, Cd0.96Zn0.04 and Zn-diffused CdTe by defect etching, J MAT S-M E, 9(5), 1998, pp. 397-401
Risultati: 1-15 |