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Results: 1-9 |
Results: 9
Quantitative measurement of the surface silicon interstitial boundary condition and silicon interstitial injection into silicon during oxidation - art. no. 085316
Authors: Carroll, MS Sturm, JC Buyuklimanli, T
Citation: Ms. Carroll et al., Quantitative measurement of the surface silicon interstitial boundary condition and silicon interstitial injection into silicon during oxidation - art. no. 085316, PHYS REV B, 6408(8), 2001, pp. 5316
Diffusion enhanced carbon loss from SiGeC layers due to oxidation - art. no. 073308
Authors: Carroll, MS Sturm, JC Napolitani, E De Salvador, D Berti, M Stangl, J Bauer, G Tweet, DJ
Citation: Ms. Carroll et al., Diffusion enhanced carbon loss from SiGeC layers due to oxidation - art. no. 073308, PHYS REV B, 6407(7), 2001, pp. 3308
Social complexity and the management of small-diameter stands
Authors: Findley, AJ Carroll, MS Blatner, KA
Citation: Aj. Findley et al., Social complexity and the management of small-diameter stands, J FORESTRY, 99(12), 2001, pp. 18
Adaptation strategies of displaced Idaho woods workers: Results of a longitudinal panel study
Authors: Carroll, MS Blatner, KA Alt, FJ Schuster, EG Findley, AJ
Citation: Ms. Carroll et al., Adaptation strategies of displaced Idaho woods workers: Results of a longitudinal panel study, SOC NATUR R, 13(2), 2000, pp. 95-113
Employment and displacement among northwestern forest products workers
Authors: Carroll, MS Daniels, SE Kusel, J
Citation: Ms. Carroll et al., Employment and displacement among northwestern forest products workers, SOC NATUR R, 13(2), 2000, pp. 151-156
High performance sub-0.25 mu m devices using ultrathin oxide-nitride-oxidegate dielectric formed with low pressure oxidation and chemical vapor deposition
Authors: Ma, Y Lee, JL Carroll, MS Lee, KH
Citation: Y. Ma et al., High performance sub-0.25 mu m devices using ultrathin oxide-nitride-oxidegate dielectric formed with low pressure oxidation and chemical vapor deposition, IEEE ELEC D, 21(6), 2000, pp. 316-318
Untrammeled by whom?
Authors: Carroll, MS
Citation: Ms. Carroll, Untrammeled by whom?, J FORESTRY, 98(10), 2000, pp. 1
Low-temperature preparation of oxygen- and carbon-free silicon and silicon-germanium surfaces for silicon and silicon-germanium epitaxial growth by rapid thermal chemical vapor deposition
Authors: Carroll, MS Sturm, JC Yang, M
Citation: Ms. Carroll et al., Low-temperature preparation of oxygen- and carbon-free silicon and silicon-germanium surfaces for silicon and silicon-germanium epitaxial growth by rapid thermal chemical vapor deposition, J ELCHEM SO, 147(12), 2000, pp. 4652-4659
Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation
Authors: Carroll, MS Chang, CL Sturm, JC Buyuklimanli, T
Citation: Ms. Carroll et al., Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation, APPL PHYS L, 73(25), 1998, pp. 3695-3697
Risultati: 1-9 |