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Results: 1-8 |
Results: 8
Electrical characterization of Al/SiNx : H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques
Authors: Castan, H Duenas, S Barbolla, J Blanco, N Martil, I Gonzalez-Diaz, G
Citation: H. Castan et al., Electrical characterization of Al/SiNx : H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques, JPN J A P 1, 40(7), 2001, pp. 4479-4484
Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx : H/InP structures
Authors: Redondo, E Martil, I Gonzalez-Diaz, G Castan, H Duenas, S
Citation: E. Redondo et al., Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx : H/InP structures, J VAC SCI B, 19(1), 2001, pp. 186-191
C-V, DLTS and conductance transient characterization of SiNx : H/InP interface improved by N-2 remote plasma cleaning of the InP surface
Authors: Castan, H Duenas, S Barbolla, J Redondo, E Martil, I Gonzalez-Diaz, G
Citation: H. Castan et al., C-V, DLTS and conductance transient characterization of SiNx : H/InP interface improved by N-2 remote plasma cleaning of the InP surface, J MAT S-M E, 12(4-6), 2001, pp. 263-267
DLTS and conductance transient investigation on defects in anodic tantalumpentoxide thin films
Authors: Duenas, S Castan, H Barbolla, J Kola, RR Sullivan, PA
Citation: S. Duenas et al., DLTS and conductance transient investigation on defects in anodic tantalumpentoxide thin films, J MAT S-M E, 12(4-6), 2001, pp. 317-321
Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx : H/InP metal-insulator-semiconductor structures
Authors: Castan, H Duenas, S Barbolla, J Redondo, E Martil, I Gonzalez-Diaz, G
Citation: H. Castan et al., Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx : H/InP metal-insulator-semiconductor structures, JPN J A P 1, 39(11), 2000, pp. 6212-6215
Electrical characteristics of anodic tantalum pentoxide thin films under thermal stress
Authors: Duenas, S Castan, H Barbolla, J Kola, RR Sullivan, PA
Citation: S. Duenas et al., Electrical characteristics of anodic tantalum pentoxide thin films under thermal stress, MICROEL REL, 40(4-5), 2000, pp. 659-662
Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx : H/InP and Al/SiNx : H/In0.53Ga0.47As structures by DLTSand conductance transient techniques
Authors: Castan, H Duenas, S Barbolla, J Redondo, E Blanco, N Martil, I Gonzalez-Diaz, G
Citation: H. Castan et al., Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx : H/InP and Al/SiNx : H/In0.53Ga0.47As structures by DLTSand conductance transient techniques, MICROEL REL, 40(4-5), 2000, pp. 845-848
Thermally induced improvements on SiNx : H/InP devices
Authors: Redondo, E Blanco, N Martil, I Gonzalez-Diaz, G Pelaez, R Deunas, S Castan, H
Citation: E. Redondo et al., Thermally induced improvements on SiNx : H/InP devices, J VAC SCI A, 17(4), 1999, pp. 2178-2182
Risultati: 1-8 |