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Results:
1-7
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Results: 7
Authors:
Biefeld, RM
Cederberg, JG
Peake, GM
Kurtz, SR
Citation: Rm. Biefeld et al., The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition, J CRYST GR, 225(2-4), 2001, pp. 384-390
Authors:
Cederberg, JG
Bieg, B
Huang, JW
Stockman, SA
Peanasky, MJ
Kuech, TF
Citation: Jg. Cederberg et al., Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE, J ELEC MAT, 29(4), 2000, pp. 426-429
Authors:
Bieg, B
Cederberg, JG
Kuech, TF
Citation: B. Bieg et al., High-temperature hysteretic electronic effects of (AlxGa1-x)(0.5)In0.5P (x> 0.65), J ELEC MAT, 29(2), 2000, pp. 231-236
Authors:
Cederberg, JG
Culp, TD
Bieg, B
Pfeiffer, D
Winter, CH
Bray, KL
Kuech, TF
Citation: Jg. Cederberg et al., Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium, J APPL PHYS, 85(3), 1999, pp. 1825-1831
Authors:
Moran, PD
Hansen, DM
Matyi, RJ
Cederberg, JG
Mawst, LJ
Kuech, TF
Citation: Pd. Moran et al., InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality, APPL PHYS L, 75(11), 1999, pp. 1559-1561
Authors:
Cederberg, JG
Bieg, B
Huang, JW
Stockman, SA
Peanasky, MJ
Kuech, TF
Citation: Jg. Cederberg et al., Intrinsic and oxygen-related deep level defects in In-0.5(AlxGa1-x)(0.5)P grown by metal-organic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 63-68
Authors:
Cederberg, JG
Culp, TD
Bieg, B
Pfeiffer, D
Winter, CH
Bray, KL
Kuech, TF
Citation: Jg. Cederberg et al., Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium, J CRYST GR, 195(1-4), 1998, pp. 105-111
Risultati:
1-7
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