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Results:
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Results: 22
Authors:
Zeuner, M
Scholze, F
Neumann, H
Chasse, T
Otto, G
Roth, D
Hellmich, A
Ocker, B
Citation: M. Zeuner et al., A unique ECR broad beam source for thin film processing, SURF COAT, 142, 2001, pp. 11-20
Authors:
Hecht, JD
Frost, F
Chasse, T
Hirsch, D
Neumann, H
Schindler, A
Bigl, F
Citation: Jd. Hecht et al., In situ characterization of the nitridation of AIII-BV semiconductor surfaces by means of X-ray photoelectron spectroscopy, APPL SURF S, 179(1-4), 2001, pp. 196-202
Authors:
Otte, K
Lippold, G
Hirsch, D
Gebhardt, RK
Chasse, T
Citation: K. Otte et al., Conductivity type conversion of p-type CuInSe2 due to hydrogenation, APPL SURF S, 179(1-4), 2001, pp. 203-208
Authors:
Otte, K
Lippold, G
Hirsch, D
Chasse, T
Schindler, A
Yakushev, MV
Martin, RW
Bigl, F
Citation: K. Otte et al., In situ XPS investigations of ion beam hydrogenation of CuInSe2, THIN SOL FI, 387(1-2), 2001, pp. 185-188
Authors:
Molodtsov, SL
Schneider, W
Preobrajenski, AB
Boysen, J
Richter, M
Chasse, T
Laubschat, C
Citation: Sl. Molodtsov et al., Electronic structure and surface reconstruction of DyNi films grown on W(110), SURF SCI, 482, 2001, pp. 746-751
Authors:
Preobrajenski, AB
Gebhardt, RK
Uhlig, I
Chasse, T
Citation: Ab. Preobrajenski et al., Two types of sulfur-induced (2 x 1) reconstructions on InP(001), SURF SCI, 481(1-3), 2001, pp. 1-12
Authors:
Hecht, JD
Frost, F
Hirsch, D
Neumann, H
Schindler, A
Preobrajenski, AB
Chasse, T
Citation: Jd. Hecht et al., Interstitial nitrogen induced by low-energy ion beam nitridation of AIII-BV semiconductor surfaces, J APPL PHYS, 90(12), 2001, pp. 6066-6069
Authors:
Gebhardt, RK
Preobrajenski, AB
Chasse, T
Citation: Rk. Gebhardt et al., Core and valence-level photoemission study of the InP(001)-(2x1)S surface:Surface structure and electronic states, PHYS REV B, 61(15), 2000, pp. 9997-10000
Authors:
Preobrajenski, AB
Schomann, S
Gebhardt, RK
Chasse, T
Citation: Ab. Preobrajenski et al., Passivation of the Ge/InP(110) interface by As interlayers: Interface reactions and band offsets, J VAC SCI B, 18(4), 2000, pp. 1973-1979
Authors:
Preobrajenski, AB
Chasse, T
Citation: Ab. Preobrajenski et T. Chasse, Atomic and electronic structure of epitaxial PbS on InP(110) and InP(001), APPL SURF S, 166(1-4), 2000, pp. 201-208
Exploiting the difference in lattice structures for formation of self-assembled PbS dots on InP(110)
Authors:
Preobrajenski, AB
Barucki, K
Chasse, T
Citation: Ab. Preobrajenski et al., Exploiting the difference in lattice structures for formation of self-assembled PbS dots on InP(110), PHYS REV L, 85(20), 2000, pp. 4337-4340
Authors:
Dittmar, J
Engler, C
Chasse, T
Citation: J. Dittmar et al., Quantumchemical ab initio investigation of the atomic and electronic structure for sulfur chemisorption on InP(001), Z PHYS CHEM, 209, 1999, pp. 47-65
Authors:
Hesse, R
Chasse, T
Szargan, R
Citation: R. Hesse et al., Peak shape analysis of core level photoelectron spectra using UNIFIT for WINDOWS, FRESEN J AN, 365(1-3), 1999, pp. 48-54
Authors:
Zerulla, D
Chasse, T
Citation: D. Zerulla et T. Chasse, X-ray induced damage of self-assembled alkanethiols on gold and indium phosphide, LANGMUIR, 15(16), 1999, pp. 5285-5294
Authors:
Chasse, T
Zerulla, D
Hallmeier, KH
Citation: T. Chasse et al., Angular resolved X-ray absorption near edge structure investigation of adsorbed alkanethiol monolayers on III-V(110) surfaces, SURF REV L, 6(6), 1999, pp. 1179-1186
Authors:
Chasse, A
Niebergall, L
Rennert, P
Uhlig, I
Chasse, T
Citation: A. Chasse et al., Breakdown of the forward scattering model in MgO(001), SURF REV L, 6(6), 1999, pp. 1207-1214
Authors:
Gebhardt, RK
Sloboshanin, S
Schaefer, JA
Chasse, T
Citation: Rk. Gebhardt et al., Arsenic interlayers at the Sn/InP(001) interface, APPL SURF S, 142(1-4), 1999, pp. 94-98
Authors:
Preobrajenski, AB
Chasse, T
Citation: Ab. Preobrajenski et T. Chasse, Epitaxial growth and interface structure of PbS on InP(110), APPL SURF S, 142(1-4), 1999, pp. 394-399
Authors:
Sloboshanin, S
Gebhardt, RK
Schaefer, JA
Chasse, T
Citation: S. Sloboshanin et al., Photoemission study of the interface reaction between Ag and H2S treated InP(001), SURF SCI, 431(1-3), 1999, pp. 252-259
Authors:
Chasse, T
Wu, CI
Hill, IG
Kahn, A
Citation: T. Chasse et al., Band alignment at organic-inorganic semiconductor interfaces: alpha-NPD and CuPc on InP(110), J APPL PHYS, 85(9), 1999, pp. 6589-6592
Authors:
Zerulla, D
Mayer, D
Hallmeier, KH
Chasse, T
Citation: D. Zerulla et al., Angular-resolved XANES measurements of the polar and azimuthal orientationof alkanethiols on InP(110), CHEM P LETT, 311(1-2), 1999, pp. 8-12
Authors:
Chasse, T
Chasse, A
Schomann, S
Citation: T. Chasse et al., High-temperature arsenic adsorption on InP(110) - surface bonding and surface structure, J ELEC SPEC, 96(1-3), 1998, pp. 1-9
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