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Results:
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Results: 5
Improved high-voltage lateral RESURF MOSFETs in 4H-SiC
Authors:
Banerjee, S Chatty, K Chow, TP Gutmann, RJ
Citation:
S. Banerjee et al., Improved high-voltage lateral RESURF MOSFETs in 4H-SiC, IEEE ELEC D, 22(5), 2001, pp. 209-211
Accumulation-layer electron mobility in n-channel 4H-SiC MOSFETs
Authors:
Chatty, K Chow, TP Gutmann, RJ Arnold, E Alok, D
Citation:
K. Chatty et al., Accumulation-layer electron mobility in n-channel 4H-SiC MOSFETs, IEEE ELEC D, 22(5), 2001, pp. 212-214
Effect of processing conditions on inversion layer mobility and interface state density in 4H-SiC MOSFETs
Authors:
Banerjee, S Chatty, K Chow, TP Gutmann, RJ
Citation:
S. Banerjee et al., Effect of processing conditions on inversion layer mobility and interface state density in 4H-SiC MOSFETs, J ELEC MAT, 30(3), 2001, pp. 253-259
High-voltage lateral RESURF MOSFET's on 4H-SiC
Authors:
Chatty, K Banerjee, S Chow, TP Gutmann, RJ
Citation:
K. Chatty et al., High-voltage lateral RESURF MOSFET's on 4H-SiC, IEEE ELEC D, 21(7), 2000, pp. 356-358
Re-oxidation characteristics of oxynitrides on 3C- and 4H-SiC
Authors:
Chatty, K Khemka, V Chow, TP Gutmann, RJ
Citation:
K. Chatty et al., Re-oxidation characteristics of oxynitrides on 3C- and 4H-SiC, J ELEC MAT, 28(3), 1999, pp. 161-166
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