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Results: 1-10 |
Results: 10

Authors: Wang, QM Li, C Cheng, BW Yang, QQ
Citation: Qm. Wang et al., Si-based resonant-cavity-enhanced photodetector, OPT ENG, 40(7), 2001, pp. 1192-1194

Authors: Huang, CJ Tang, Y Li, DZ Cheng, BW Luo, LP Yu, JZ Wang, QM
Citation: Cj. Huang et al., X-ray evidence for Ge/Si(001) island columns in multilayer structure, J CRYST GR, 223(1-2), 2001, pp. 99-103

Authors: Huang, CJ Zuo, YH Li, DZ Cheng, BW Luo, LP Yu, JZ Wang, QM
Citation: Cj. Huang et al., Shape evolution of Ge/Si(001) islands induced by strain-driven alloying, APPL PHYS L, 78(24), 2001, pp. 3881-3883

Authors: Huang, CJ Tang, Y Li, DZ Cheng, BW Luo, LP Yu, JZ Wang, QM
Citation: Cj. Huang et al., Different transfer paths for thermally activated electrons and holes in self-organized Ge/Si(001) islands in a multilayer structure, APPL PHYS L, 78(14), 2001, pp. 2006-2008

Authors: Li, C Yang, QQ Wang, HJ Cheng, BW Yu, JZ Wang, QM
Citation: C. Li et al., Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells, OPT MATER, 14(3), 2000, pp. 267-269

Authors: Yu, Z Li, DZ Cheng, BW Huang, CJ Lei, ZL Yu, JZ Wang, QM Liang, JW
Citation: Z. Yu et al., A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4, J CRYST GR, 218(2-4), 2000, pp. 245-249

Authors: Li, DZ Huang, CJ Cheng, BW Wang, HJ Yu, Z Zhang, CH Yu, JZ Wang, QM
Citation: Dz. Li et al., Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe, J CRYST GR, 213(3-4), 2000, pp. 308-311

Authors: Huang, CJ Li, DZ Yu, Z Cheng, BW Yu, JZ Wang, QM
Citation: Cj. Huang et al., Atomic-force-microscopy investigation of the formation and evolution of Geislands on GexSi1-x strained layers, APPL PHYS L, 77(3), 2000, pp. 391-393

Authors: Huang, CJ Li, DZ Cheng, BW Yu, JZ Wang, QM
Citation: Cj. Huang et al., Oblique alignment of columns of self-organized Ge/Si(001) islands in multilayer structure, APPL PHYS L, 77(18), 2000, pp. 2852-2854

Authors: Wang, QM Yang, QQ Zhu, YQ Si, JJ Liu, YL Lei, HB Cheng, BW Yu, JZ
Citation: Qm. Wang et al., Si-based optoelectronic devices and their attractive applications, CZEC J PHYS, 49(5), 1999, pp. 837-848
Risultati: 1-10 |