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Results: 1-12 |
Results: 12
Electron holography studies of the charge on dislocations in GaN - art. no. 205504
Authors: Cherns, D Jiao, CG
Citation: D. Cherns et Cg. Jiao, Electron holography studies of the charge on dislocations in GaN - art. no. 205504, PHYS REV L, 8720(20), 2001, pp. 5504
Profiling band structure in GaN devices by electron holography
Authors: Cherns, D Mokhtari, H Jiao, CG Averbeck, R Riechert, H
Citation: D. Cherns et al., Profiling band structure in GaN devices by electron holography, J CRYST GR, 230(3-4), 2001, pp. 410-414
Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells
Authors: Henley, SJ Bewick, A Cherns, D Ponce, FA
Citation: Sj. Henley et al., Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells, J CRYST GR, 230(3-4), 2001, pp. 481-486
Microstructure of laterally overgrown GaN layers
Authors: Liliental-Weber, Z Cherns, D
Citation: Z. Liliental-weber et D. Cherns, Microstructure of laterally overgrown GaN layers, J APPL PHYS, 89(12), 2001, pp. 7833-7840
Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
Authors: Cherns, D Henley, SJ Ponce, FA
Citation: D. Cherns et al., Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence, APPL PHYS L, 78(18), 2001, pp. 2691-2693
Amorphous GaN grown by room temperature molecular beam epitaxy
Authors: Kuball, M Mokhtari, H Cherns, D Lu, J Westwood, DI
Citation: M. Kuball et al., Amorphous GaN grown by room temperature molecular beam epitaxy, JPN J A P 1, 39(8), 2000, pp. 4753-4754
The structure and optoelectronic properties of dislocations in GaN
Authors: Cherns, D
Citation: D. Cherns, The structure and optoelectronic properties of dislocations in GaN, J PHYS-COND, 12(49), 2000, pp. 10205-10212
Preface to recent developments in the electron microscopy of semiconductors
Authors: Takeda, S Cherns, D
Citation: S. Takeda et D. Cherns, Preface to recent developments in the electron microscopy of semiconductors, J ELEC MICR, 49(2), 2000, pp. 209-209
Direct observation of piezoelectric fields in GaN/InGaN/GaN strained quantum wells
Authors: Barnard, JS Cherns, D
Citation: Js. Barnard et D. Cherns, Direct observation of piezoelectric fields in GaN/InGaN/GaN strained quantum wells, J ELEC MICR, 49(2), 2000, pp. 281-291
Analysis of ultrathin Ge layers in Si by large angle convergent beam electron diffraction
Authors: Hovsepian, A Cherns, D Jaeger, W
Citation: A. Hovsepian et al., Analysis of ultrathin Ge layers in Si by large angle convergent beam electron diffraction, PHIL MAG A, 79(6), 1999, pp. 1395-1410
Characterisation of defects and piezoelectric fields in InGaN/GaN layers by transmission electron microscopy
Authors: Cherns, D Barnard, J Mokhtari, H
Citation: D. Cherns et al., Characterisation of defects and piezoelectric fields in InGaN/GaN layers by transmission electron microscopy, MAT SCI E B, 66(1-3), 1999, pp. 33-38
Measurement of the piezoelectric field across strained InGaN GaN layers byelectron holography
Authors: Cherns, D Barnard, J Ponce, FA
Citation: D. Cherns et al., Measurement of the piezoelectric field across strained InGaN GaN layers byelectron holography, SOL ST COMM, 111(5), 1999, pp. 281-285
Risultati: 1-12 |