Authors:
Chernyak, L
Ghabboun, J
Lyahovitskaya, V
Cahen, D
Citation: L. Chernyak et al., Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 mu m IR electroluminescence, MAT SCI E B, 81(1-3), 2001, pp. 113-115
Citation: L. Chernyak et M. Klimov, Nanoscale p-n junction fabrication in silicon due to controlled dopant electromigration, APPL PHYS L, 78(11), 2001, pp. 1613-1615
Authors:
Lyahovitskaya, V
Chernyak, L
Greenberg, J
Kaplan, L
Cahen, D
Citation: V. Lyahovitskaya et al., Low temperature, postgrowth self-doping of CdTe single crystals due to controlled deviation from stoichiometry, J APPL PHYS, 88(7), 2000, pp. 3976-3981
Authors:
Chernyak, L
Osinsky, A
Fuflyigin, V
Schubert, EF
Citation: L. Chernyak et al., Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices, APPL PHYS L, 77(6), 2000, pp. 875-877