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Results: 1-11 |
Results: 11
Controlled ion migration tuning of semiconductor electrical properties
Authors: Chernyak, L Cahen, D
Citation: L. Chernyak et D. Cahen, Controlled ion migration tuning of semiconductor electrical properties, DEFECT DIFF, 191, 2001, pp. 61-97
Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 mu m IR electroluminescence
Authors: Chernyak, L Ghabboun, J Lyahovitskaya, V Cahen, D
Citation: L. Chernyak et al., Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 mu m IR electroluminescence, MAT SCI E B, 81(1-3), 2001, pp. 113-115
Minority carrier transport in GaN and related materials
Authors: Chernyak, L Osinsky, A Schulte, A
Citation: L. Chernyak et al., Minority carrier transport in GaN and related materials, SOL ST ELEC, 45(9), 2001, pp. 1687-1702
Minority electron transport anisotropy in p-type AlxGa1-xN/GaN superlattices
Authors: Chernyak, L Osinsky, A Fuflyigin, VN Graff, JW Schubert, EF
Citation: L. Chernyak et al., Minority electron transport anisotropy in p-type AlxGa1-xN/GaN superlattices, IEEE DEVICE, 48(3), 2001, pp. 433-437
Phototransistor measurements in AlGaN/GaN HBTs
Authors: Chernyak, L Osinsky, A Pearton, SJ Ren, F
Citation: L. Chernyak et al., Phototransistor measurements in AlGaN/GaN HBTs, ELECTR LETT, 37(23), 2001, pp. 1411-1412
Enhancement of minority carrier transport in forward biased GaN p-n junction
Authors: Chernyak, L Nootz, G Osinsky, A
Citation: L. Chernyak et al., Enhancement of minority carrier transport in forward biased GaN p-n junction, ELECTR LETT, 37(14), 2001, pp. 922-923
Nanoscale p-n junction fabrication in silicon due to controlled dopant electromigration
Authors: Chernyak, L Klimov, M
Citation: L. Chernyak et M. Klimov, Nanoscale p-n junction fabrication in silicon due to controlled dopant electromigration, APPL PHYS L, 78(11), 2001, pp. 1613-1615
n- and p-type post-growth self-doping of CdTe single crystals
Authors: Lyahovitskaya, V Chernyak, L Greenberg, J Kaplan, L Cahen, D
Citation: V. Lyahovitskaya et al., n- and p-type post-growth self-doping of CdTe single crystals, J CRYST GR, 214, 2000, pp. 1155-1157
Low temperature, postgrowth self-doping of CdTe single crystals due to controlled deviation from stoichiometry
Authors: Lyahovitskaya, V Chernyak, L Greenberg, J Kaplan, L Cahen, D
Citation: V. Lyahovitskaya et al., Low temperature, postgrowth self-doping of CdTe single crystals due to controlled deviation from stoichiometry, J APPL PHYS, 88(7), 2000, pp. 3976-3981
Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices
Authors: Chernyak, L Osinsky, A Fuflyigin, V Schubert, EF
Citation: L. Chernyak et al., Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices, APPL PHYS L, 77(6), 2000, pp. 875-877
Electron beam and optical depth profiling of quasibulk GaN
Authors: Chernyak, L Osinsky, A Nootz, G Schulte, A Jasinski, J Benamara, M Liliental-Weber, Z Look, DC Molnar, RJ
Citation: L. Chernyak et al., Electron beam and optical depth profiling of quasibulk GaN, APPL PHYS L, 77(17), 2000, pp. 2695-2697
Risultati: 1-11 |