Authors: Chung, GY Tin, CC Williams, JR McDonald, K Chanana, RK Weller, RA Pantelides, ST Feldman, LC Holland, OW Das, MK Palmour, JW

Citation: Gy. Chung et al., Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide, IEEE ELEC D, 22(4), 2001, pp. 176-178

Authors: Chun, MS Chung, GY Kim, JJ

Citation: Ms. Chun et al., On the behavior of the electrostatic colloidal interaction in the membranefiltration of latex suspensions, J MEMBR SCI, 193(1), 2001, pp. 97-109

Authors: Stahlbush, RE Macfarlane, PJ Williams, JR Chung, GY Feldman, LC McDonald, K

Citation: Re. Stahlbush et al., Light emission from 4H SiC MOSFETs with and without NO passivation, MICROEL ENG, 59(1-4), 2001, pp. 393-398

Authors: Chanana, RK McDonald, K Di Ventra, M Pantelides, ST Feldman, LC Chung, GY Tin, CC Williams, JR Weller, RA

Citation: Rk. Chanana et al., Fowler-Nordheim hole tunneling in p-SiC/SiO2 structures, APPL PHYS L, 77(16), 2000, pp. 2560-2562

Authors: Chung, GY Tin, CC Williams, JR McDonald, K Di Ventra, M Pantelides, ST Feldman, LC Weller, RA

Citation: Gy. Chung et al., Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide, APPL PHYS L, 76(13), 2000, pp. 1713-1715

Authors: Chung, GY Seneff, S

Citation: Gy. Chung et S. Seneff, A hierarchical duration model for speech recognition based on the ANGIE framework, SPEECH COMM, 27(2), 1999, pp. 113-134