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Results:
1-21
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Results: 21
Authors:
Zhu, XM
Chung, I
O'Gorman, MR
Scholl, PR
Citation: Xm. Zhu et al., Coexpression of normal and mutated CD40 ligand with deletion of a putativeRNA lariat branchpoint sequence in X-linked hyper-IgM syndrome, CLIN IMMUNO, 99(3), 2001, pp. 334-339
Authors:
Choy, JH
Kim, JY
Chung, I
Citation: Jh. Choy et al., Neutron diffraction and X-ray absorption spectroscopic analyses for lithiated Aurivillius-type layered perovskite oxide, Li2Bi4Ti3O12, J PHYS CH B, 105(33), 2001, pp. 7908-7912
Authors:
Kim, J
Kim, CJ
Chung, I
Citation: J. Kim et al., Retention behavior of ferroelectric memory devices depending on the capacitor processes, INTEGR FERR, 33(1-4), 2001, pp. 133-143
Authors:
Liu, ZQ
Chung, I
Dong, K
Citation: Zq. Liu et al., Alternative splicing of the BSC1 gene generates tissue-specific isoforms in the German cockroach, INSEC BIO M, 31(6-7), 2001, pp. 703-713
Authors:
Kim, JY
Chung, I
Choy, JH
Park, GS
Citation: Jy. Kim et al., Macromolecular nanoplatelet of aurivillius-type layered perovskite oxide, Bi4Ti3O12, CHEM MATER, 13(9), 2001, pp. 2759
Authors:
Chung, CW
Chung, I
Citation: Cw. Chung et I. Chung, Etch characteristics of iridium in chlorine-containing and fluorine-containing gas plasmas, J VAC SCI A, 19(5), 2001, pp. 2400-2406
Authors:
Park, Y
Lee, JK
Chung, I
Lee, JY
Citation: Y. Park et al., Delamination behavior of Pt in a SiO2/Pt/Pb(ZrxTi1-x)O-3/Pt ferroelectric thin-film capacitor, J APPL PHYS, 89(4), 2001, pp. 2327-2331
Authors:
Chung, CW
Chung, I
Citation: Cw. Chung et I. Chung, Etch behavior of PB(ZrxTi1-x)O-3 films using a TiO2 hard mask, J ELCHEM SO, 148(5), 2001, pp. C353-C356
Authors:
Sohn, DS
Xianyu, WX
Lee, WI
Lee, I
Chung, I
Citation: Ds. Sohn et al., Ferroelectric SrBi4Ti4O15 thin films with high polarization grown on an IrO2 layer, APPL PHYS L, 79(22), 2001, pp. 3672-3674
Authors:
Kim, SP
Choi, SK
Park, Y
Chung, I
Citation: Sp. Kim et al., Effect of water absorption on the residual stress in fluorinated silicon-oxide thin films fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition, APPL PHYS L, 79(2), 2001, pp. 185-187
Authors:
Park, Y
Chung, I
Citation: Y. Park et I. Chung, Application of fluorinated SiO2 interlayer dielectrics for ferroelectric memory, INTEGR FERR, 31(1-4), 2000, pp. 241-250
Authors:
Chung, CW
Chung, I
Citation: Cw. Chung et I. Chung, Platinum etching using a TiO2 hard mask in an O-2/Cl-2/Ar plasma, J VAC SCI A, 18(3), 2000, pp. 835-839
Authors:
Chung, I
Citation: I. Chung, Monte Carlo simulation of free radical telomerization, POLYMER, 41(15), 2000, pp. 5643-5651
Authors:
Park, Y
Lee, JK
Chung, I
Lee, JY
Citation: Y. Park et al., Effect of oxygen plasma treatment on hydrogen-damaged Pt/Pb(ZrxTi1-x)O-3/Pt ferroelectric thin-film capacitor, JPN J A P 2, 38(5B), 1999, pp. L577-L579
Authors:
Chung, I
Kim, CJ
Park, Y
Chung, CW
Kim, TY
Citation: I. Chung et al., Fabrication and characterization of MFISFET using CMOS process for single transistor memory application, INTEGR FERR, 27(1-4), 1999, pp. 1075-1083
Authors:
Chung, CW
Kim, TY
Chung, I
Citation: Cw. Chung et al., Investigation of preannealing method for preparation of robust SrBi2Ta2O9 thin films by chemical solution deposition, INTEGR FERR, 27(1-4), 1999, pp. 1105-1113
Authors:
Chung, I
Schwartz, PE
Crystal, RG
Pizzorno, G
Leavitt, J
Deisseroth, AB
Citation: I. Chung et al., Use of L-plastin promoter to develop an adenoviral system that confers transgene expression in ovarian cancer cells but not in normal mesothelial cells, CANC GENE T, 6(2), 1999, pp. 99-106
Authors:
Kim, J
Yi, IS
Chung, I
Citation: J. Kim et al., Growth of ferroelectric SbNbO4 thin film by chemical solution deposition method, J KOR PHYS, 35, 1999, pp. S1256-S1259
Authors:
Chung, CW
Chung, I
Citation: Cw. Chung et I. Chung, Effect of pre-annealing on physical and electrical properties of SrBi2Ta2O9 thin films prepared by chemical solution deposition, THIN SOL FI, 354(1-2), 1999, pp. 111-117
Authors:
Lee, JK
Park, Y
Chung, I
Oh, SJ
Jung, DJ
Song, YJ
Koo, BJ
Lee, SY
Kim, K
Desu, SB
Citation: Jk. Lee et al., Improvement in the electrical properties in Pt/Pb(Zr0.52Ti0.48)O-3/Pt ferroelectric capacitors using a wet cleaning method, J APPL PHYS, 86(11), 1999, pp. 6376-6381
Authors:
Lee, JK
Kim, TY
Chung, I
Desu, SB
Citation: Jk. Lee et al., Characterization and elimination of dry etching damaged layer in Pt/Pb(Zr0.53Ti0.47)O-3/Pt ferroelectric capacitor, APPL PHYS L, 75(3), 1999, pp. 334-336
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