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Results: 1-25 | 26-50 | 51-58
Results: 26-50/58
High breakdown voltage Au/Pt/GaN Schottky diodes
Authors: Dang, GT Zhang, AP Mshewa, MM Ren, F Chyi, JI Lee, CM Chuo, CC Chi, GC Han, J Chu, SNG Wilson, RG Cao, XA Pearton, SJ
Citation: Gt. Dang et al., High breakdown voltage Au/Pt/GaN Schottky diodes, J VAC SCI A, 18(4), 2000, pp. 1135-1138
Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots
Authors: Chang, WH Hsu, TM Yeh, NT Chyi, JI
Citation: Wh. Chang et al., Electron distribution and level occupation in an ensemble of InxGa1-xAs/GaAs self-assembled quantum dots, PHYS REV B, 62(19), 2000, pp. 13040-13047
Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots
Authors: Chang, WH Hsu, TM Huang, CC Hsu, SL Lai, CY Yeh, NT Nee, TE Chyi, JI
Citation: Wh. Chang et al., Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots, PHYS REV B, 62(11), 2000, pp. 6959-6962
Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Zhang, AP Ren, F Pearton, SJ Chyi, JI Nee, TE Chuo, CC Lee, CM
Citation: Ay. Polyakov et al., Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors, SOL ST ELEC, 44(9), 2000, pp. 1549-1555
Spatial distribution of electrical properties in GaN p-i-n rectifiers
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Zhang, AP Ren, F Pearton, SJ Chyi, JI Nee, TE Lee, CM Chuo, CC
Citation: Ay. Polyakov et al., Spatial distribution of electrical properties in GaN p-i-n rectifiers, SOL ST ELEC, 44(9), 2000, pp. 1591-1595
Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer
Authors: Yang, CC Wu, MC Chuo, CC Chyi, JI Lin, CF Chi, GC
Citation: Cc. Yang et al., Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer, SOL ST ELEC, 44(8), 2000, pp. 1483-1486
Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers
Authors: Zhang, AP Dang, G Ren, F Han, J Cho, H Pearton, SJ Chyi, JI Nee, TE Lee, CM Chuo, CC Chu, SNG
Citation: Ap. Zhang et al., Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers, SOL ST ELEC, 44(7), 2000, pp. 1157-1161
Temperature dependence of GaN high breakdown voltage diode rectifiers
Authors: Chyi, JI Lee, CM Chuo, CC Cao, XA Dang, GT Zhang, AP Ren, F Pearton, SJ Chu, SNG Wilson, RG
Citation: Ji. Chyi et al., Temperature dependence of GaN high breakdown voltage diode rectifiers, SOL ST ELEC, 44(4), 2000, pp. 613-617
Surface and bulk leakage currents in high breakdown GaN rectifiers
Authors: Ren, F Zhang, AP Dang, GT Cao, XA Cho, H Pearton, SJ Chyi, JI Lee, CM Chuo, CC
Citation: F. Ren et al., Surface and bulk leakage currents in high breakdown GaN rectifiers, SOL ST ELEC, 44(4), 2000, pp. 619-622
High voltage GaN Schottky rectifiers
Authors: Dang, GT Zhang, AP Ren, F Cao, XNA Pearton, SJ Cho, H Han, J Chyi, JI Lee, CM Chuo, CC Chu, SNG Wilson, RG
Citation: Gt. Dang et al., High voltage GaN Schottky rectifiers, IEEE DEVICE, 47(4), 2000, pp. 692-696
Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures
Authors: Chen, CC Chuang, HW Chi, GC Chuo, CC Chyi, JI
Citation: Cc. Chen et al., Stimulated-emission spectra of high-indium-content InGaN/GaN multiple-quantum-well structures, APPL PHYS L, 77(23), 2000, pp. 3758-3760
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor
Authors: Johnson, JW Luo, B Ren, F Gila, BP Krishnamoorthy, W Abernathy, CR Pearton, SJ Chyi, JI Nee, TE Lee, CM Chuo, CC
Citation: Jw. Johnson et al., Gd2O3/GaN metal-oxide-semiconductor field-effect transistor, APPL PHYS L, 77(20), 2000, pp. 3230-3232
Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
Authors: Lin, YS Ma, KJ Hsu, C Feng, SW Cheng, YC Liao, CC Yang, CC Chou, CC Lee, CM Chyi, JI
Citation: Ys. Lin et al., Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells, APPL PHYS L, 77(19), 2000, pp. 2988-2990
Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing
Authors: Hsu, TM Lan, YS Chang, WH Yeh, NT Chyi, JI
Citation: Tm. Hsu et al., Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing, APPL PHYS L, 76(6), 2000, pp. 691-693
Stimulated emission study of InGaN/GaN multiple quantum well structures
Authors: Liao, CC Feng, SW Yang, CC Lin, YS Ma, KJ Chuo, CC Lee, CM Chyi, JI
Citation: Cc. Liao et al., Stimulated emission study of InGaN/GaN multiple quantum well structures, APPL PHYS L, 76(3), 2000, pp. 318-320
Effects of thermal annealing on the luminescence and structural propertiesof high indium-content InGaN/GaN quantum wells
Authors: Chuo, CC Lee, CM Nee, TE Chyi, JI
Citation: Cc. Chuo et al., Effects of thermal annealing on the luminescence and structural propertiesof high indium-content InGaN/GaN quantum wells, APPL PHYS L, 76(26), 2000, pp. 3902-3904
Mechanism of luminescence in InGaN/GaN multiple quantum wells
Authors: Yang, HC Kuo, PF Lin, TY Chen, YF Chen, KH Chen, LC Chyi, JI
Citation: Hc. Yang et al., Mechanism of luminescence in InGaN/GaN multiple quantum wells, APPL PHYS L, 76(25), 2000, pp. 3712-3714
Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures
Authors: Yeh, NT Nee, TE Chyi, JI Hsu, TM Huang, CC
Citation: Nt. Yeh et al., Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures, APPL PHYS L, 76(12), 2000, pp. 1567-1569
Photoluminescence characteristics of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates
Authors: Yeh, NT Nee, TE Shiao, PW Chang, MN Chyi, JI Lee, CT
Citation: Nt. Yeh et al., Photoluminescence characteristics of self-assembled In0.5Ga0.5As quantum dots on vicinal GaAs substrates, JPN J A P 1, 38(1B), 1999, pp. 550-553
Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots
Authors: Chang, WH Hsu, TM Tsai, KF Nee, TE Chyi, JI Yeh, NT
Citation: Wh. Chang et al., Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots, JPN J A P 1, 38(1B), 1999, pp. 554-557
Room-temperature operation of In0.5Ga0.5As quantum dot lasers grown on misoriented GaAs substrates by molecular beam epitaxy
Authors: Nee, TE Yeh, NT Shiao, PW Chyi, JI Lee, CT
Citation: Te. Nee et al., Room-temperature operation of In0.5Ga0.5As quantum dot lasers grown on misoriented GaAs substrates by molecular beam epitaxy, JPN J A P 1, 38(1B), 1999, pp. 605-607
Strain-compensated 1.3-mu m AlGaInAs quantum-well lasers with multiquantumbarriers at the cladding layers
Authors: Pan, JW Chen, MH Chyi, JI Shih, TT
Citation: Jw. Pan et al., Strain-compensated 1.3-mu m AlGaInAs quantum-well lasers with multiquantumbarriers at the cladding layers, IEEE PHOTON, 11(1), 1999, pp. 9-11
Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots
Authors: Hsu, TM Chang, WH Tsai, KF Chyi, JI Yeh, NT Nee, TE
Citation: Tm. Hsu et al., Electron-filling modulation reflectance in charged self-assembled InxGa1-xAs quantum dots, PHYS REV B, 60(4), 1999, pp. R2189-R2192
Dc and microwave characteristics of In(0.32)Al(0.68)AS/In0.33Ga0.67As heterojunction bipolar transistors grown on GaAs
Authors: Hwang, HP Shieh, JL Chyi, JI
Citation: Hp. Hwang et al., Dc and microwave characteristics of In(0.32)Al(0.68)AS/In0.33Ga0.67As heterojunction bipolar transistors grown on GaAs, SOL ST ELEC, 43(3), 1999, pp. 463-468
Behavior of arsenic precipitation in low-temperature grown III-V arsenides
Authors: Chang, MN Hsieh, KC Nee, TE Chuo, CC Chyi, JI
Citation: Mn. Chang et al., Behavior of arsenic precipitation in low-temperature grown III-V arsenides, J CRYST GR, 202, 1999, pp. 212-216
Risultati: 1-25 | 26-50 | 51-58