Citation: Y. Cordier et al., Effects of mismatch strain and alloy composition on the formation of InAs islands on InAlAs templates, J ELEC MAT, 30(5), 2001, pp. 453-458
Citation: Y. Cordier et al., Comparison of InAs islands self-assembled on pseudomorphic and metamorphicInAlAs buffer layers grown on GaAs substrate, J CRYST GR, 227, 2001, pp. 1016-1019
Authors:
Boudrissa, M
Delos, E
Gaquiere, C
Rousseau, M
Cordier, Y
Theron, D
De Jaeger, JC
Citation: M. Boudrissa et al., Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT: Modeling and measurements, IEEE DEVICE, 48(6), 2001, pp. 1037-1044
Authors:
Cordier, Y
Chauveau, JM
Ferre, D
Dipersio, J
Citation: Y. Cordier et al., Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers, J VAC SCI B, 18(5), 2000, pp. 2513-2517
Authors:
Nazih, A
Cordier, Y
Kolbe, HVJ
Heissler, D
Citation: A. Nazih et al., One-pot transformation of a t-butyl carbamate to a bromoacetamide in the synthesis of the gene transfer agent pcTG201, SYNLETT, (5), 2000, pp. 635-636
Authors:
Boudrissa, M
Delos, E
Cordier, Y
Theron, D
De Jaeger, JC
Citation: M. Boudrissa et al., Enhancement mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate with high breakdown voltage, IEEE ELEC D, 21(11), 2000, pp. 512-514
Authors:
Cordier, Y
Ferre, D
Chauveau, JM
Dipersio, J
Citation: Y. Cordier et al., Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps, APPL SURF S, 166(1-4), 2000, pp. 442-445
Authors:
Zaknoune, M
Cordier, Y
Bollaert, S
Ferre, D
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1-mu m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs, SOL ST ELEC, 44(9), 2000, pp. 1685-1688
Authors:
Bollaert, S
Cordier, Y
Zaknoune, M
Happy, H
Hoel, V
Lepilliet, S
Theron, D
Cappy, A
Citation: S. Bollaert et al., The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter, SOL ST ELEC, 44(6), 2000, pp. 1021-1027
Authors:
Cordier, Y
Bollaert, S
Zaknoune, M
Dipersio, J
Ferre, D
Citation: Y. Cordier et al., InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate: Influence of indium content on material properties and device performance, JPN J A P 1, 38(2B), 1999, pp. 1164-1168
Authors:
Nazih, A
Cordier, Y
Bischoff, R
Kolbe, HVJ
Heissler, D
Citation: A. Nazih et al., Synthesis and stability study of the new pentammonio lipid pcTG90, a gene transfer agent, TETRAHEDR L, 40(46), 1999, pp. 8089-8091
Authors:
Zaknoune, M
Cordier, Y
Bollaert, S
Ferre, D
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer, ELECTR LETT, 35(19), 1999, pp. 1670-1671
Authors:
Gaquiere, C
Bollaert, S
Zaknoune, M
Cordier, Y
Theron, D
Crosnier, Y
Citation: C. Gaquiere et al., Influence on power performances at 60GHz of indium composition in metamorphic HEMTs, ELECTR LETT, 35(17), 1999, pp. 1489-1491