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Results:
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Results: 15
Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon
Authors:
Cristiano, F
Colombeau, B
Grisolia, J
de Mauduit, B
Giles, F
Omri, M
Skarlatos, D
Tsoukalas, D
Claverie, A
Citation: F. Cristiano et al., Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon, NUCL INST B, 178, 2001, pp. 84-88
Authors:
Grisolia, J
Cristiano, F
Ben Assayag, G
Claverie, A
Citation: J. Grisolia et al., Kinetic aspects of the growth of platelets and voids in H implanted Si, NUCL INST B, 178, 2001, pp. 160-164
Authors:
Jalabert, L
Temple-Boyer, P
Sarrabayrouse, G
Cristiano, F
Colombeau, B
Voillot, F
Armand, C
Citation: L. Jalabert et al., Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer, MICROEL REL, 41(7), 2001, pp. 981-985
Authors:
Lamb, AC
Schiz, JFW
Bonar, JM
Cristiano, F
Ashburn, P
Hall, S
Hemment, PLF
Citation: Ac. Lamb et al., Characterisation of emitter/base leakage currents in SiGeHBTs produced using selective epitaxy, MICROEL REL, 41(2), 2001, pp. 273-279
Authors:
Schiz, JFW
Lamb, AC
Cristiano, F
Bonar, JM
Ashburn, P
Hall, S
Hemment, PLF
Citation: Jfw. Schiz et al., Leakage current mechanisms in SiGeHBTs fabricated using selective and nonselective epitaxy, IEEE DEVICE, 48(11), 2001, pp. 2492-2499
Authors:
Colombeau, B
Cristiano, F
Altibelli, A
Bonafos, C
Ben Assayag, G
Claverie, A
Citation: B. Colombeau et al., Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon, APPL PHYS L, 78(7), 2001, pp. 940-942
Authors:
Claverie, A
Colombeau, B
Ben Assayag, G
Bonafos, C
Cristiano, F
Omri, M
de Mauduit, B
Citation: A. Claverie et al., Thermal evolution of extended defects in implanted Si: impact on dopant diffusion, MAT SC S PR, 3(4), 2000, pp. 269-277
Authors:
Cristiano, F
Colombeau, B
Claverie, A
Citation: F. Cristiano et al., Energetics of extrinsic defects in Si and their role in nonequilibrium dopant diffusion, DEFECT DIFF, 183-1, 2000, pp. 199-206
Authors:
Jalabert, L
Temple-Boyer, P
Olivie, F
Sarrabayrouse, G
Cristiano, F
Colombeau, B
Citation: L. Jalabert et al., Relation between residual stress and electrical properties of polysilicon/oxide/silicon structures, MICROEL REL, 40(4-5), 2000, pp. 597-600
Authors:
Kovsarian, A
Shannon, JM
Cristiano, F
Citation: A. Kovsarian et al., Comparison of amorphous Mo and Cr disilicides in hydrogenated amorphous silicon, J NON-CRYST, 276(1-3), 2000, pp. 40-45
Authors:
Grisolia, J
Cristiano, F
De Mauduit, B
Ben Assayag, G
Letertre, F
Aspar, B
Di Cioccio, L
Claverie, A
Citation: J. Grisolia et al., Kinetic aspects of the growth of hydrogen induced platelets in SiC, J APPL PHYS, 87(12), 2000, pp. 8415-8419
Authors:
Cristiano, F
Grisolia, J
Colombeau, B
Omri, M
de Mauduit, B
Claverie, A
Giles, LF
Cowern, NEB
Citation: F. Cristiano et al., Formation energies and relative stability of perfect and faulted dislocation loops in silicon, J APPL PHYS, 87(12), 2000, pp. 8420-8428
Authors:
Cowern, NEB
Mannino, G
Stolk, PA
Roozeboom, F
Huizing, HGA
van Berkum, JGM
Cristiano, F
Claverie, A
Jaraiz, M
Citation: Neb. Cowern et al., Cluster ripening and transient enhanced diffusion in silicon, MAT SC S PR, 2(4), 1999, pp. 369-376
Authors:
Cristiano, F
Nejim, A
Suprun-Belevich, Y
Claverie, A
Hemment, PLF
Citation: F. Cristiano et al., Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys, NUCL INST B, 147(1-4), 1999, pp. 35-42
Authors:
Cowern, NEB
Mannino, G
Stolk, PA
Roozeboom, F
Huizing, HGA
van Berkum, JGM
Cristiano, F
Claverie, A
Jaraiz, M
Citation: Neb. Cowern et al., Energetics of self-interstitial clusters in Si, PHYS REV L, 82(22), 1999, pp. 4460-4463
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