AAAAAA

   
Results: 1-10 |
Results: 10
Interface properties of annealed and nitrided HTO layers
Authors: Polignano, ML Carpanese, C Crivelli, B Giussani, A Zonca, R Bersani, A
Citation: Ml. Polignano et al., Interface properties of annealed and nitrided HTO layers, MICROEL ENG, 59(1-4), 2001, pp. 379-384
High quality thin oxynitride by RTP annealing of in situ steam generation oxides for flash memory applications
Authors: Brazzelli, D Ghidini, G Crivelli, B Zonca, R Bersani, M
Citation: D. Brazzelli et al., High quality thin oxynitride by RTP annealing of in situ steam generation oxides for flash memory applications, SOL ST ELEC, 45(8), 2001, pp. 1271-1278
The impact of the nitridation process on the properties of the Si-SiO2 interface
Authors: Polignano, ML Alessandri, M Crivelli, B Zonca, R Caricato, AP Bersani, M Sbetti, M Vanzetti, L
Citation: Ml. Polignano et al., The impact of the nitridation process on the properties of the Si-SiO2 interface, J NON-CRYST, 280(1-3), 2001, pp. 39-47
Phosphorous implantation in silicon through thin SiO2 layers: Oxide damageand postoxidation thermal treatments
Authors: Vedda, A Martini, M Spinolo, G Crivelli, B Cazzaniga, F Ghidini, G Vitali, ME
Citation: A. Vedda et al., Phosphorous implantation in silicon through thin SiO2 layers: Oxide damageand postoxidation thermal treatments, J APPL PHYS, 90(10), 2001, pp. 5013-5017
Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology
Authors: Gerardi, C Melanotte, M Crivelli, B Zonca, R Alessandri, M
Citation: C. Gerardi et al., Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology, MICRON, 31(3), 2000, pp. 291-297
Electrical characterisation of oxides grown in different RTP ambients
Authors: Brazzelli, D Ghidini, G Crivelli, B Zonca, R Bersani, M Xing, GC Miner, GE D'Astici, N Kuppurao, S Lopes, D
Citation: D. Brazzelli et al., Electrical characterisation of oxides grown in different RTP ambients, MICROEL REL, 40(4-5), 2000, pp. 641-644
Effects of nitridation by nitric oxide on the leakage current of thin SiO2gate oxides
Authors: Gerardi, C Melanotte, M Lombardo, S Alessandri, M Crivelli, B Zonca, R
Citation: C. Gerardi et al., Effects of nitridation by nitric oxide on the leakage current of thin SiO2gate oxides, J APPL PHYS, 87(1), 2000, pp. 498-501
Surface morphology of nitrided thin thermal SiO2 studied by atomic force microscopy
Authors: Tallarida, G Cazzaniga, F Crivelli, B Zonca, R Alessandri, M
Citation: G. Tallarida et al., Surface morphology of nitrided thin thermal SiO2 studied by atomic force microscopy, J NON-CRYST, 245, 1999, pp. 210-216
Nitridation of thin gate or tunnel oxides by nitric oxide
Authors: Gerardi, C Zonca, R Crivelli, B Alessandri, M
Citation: C. Gerardi et al., Nitridation of thin gate or tunnel oxides by nitric oxide, J ELCHEM SO, 146(8), 1999, pp. 3058-3064
Oxide damage by ion implantation in silicon
Authors: Losavio, A Crivelli, B Cazzaniga, F Martini, M Spinolo, G Vedda, A
Citation: A. Losavio et al., Oxide damage by ion implantation in silicon, APPL PHYS L, 74(17), 1999, pp. 2453-2455
Risultati: 1-10 |