Authors:
Shivaram, R
Niu, GF
Cressler, JD
Croke, ET
Citation: R. Shivaram et al., The effect of carbon content on the minority carrier lifetime in lattice-matched p(+)-Si/p-SiGeC/n-Si/n(+)-Si diodes, SOL ST ELEC, 44(3), 2000, pp. 559-563
Citation: Js. Rieh et al., Temperature dependent minority electron mobilities in strained Si1-xGex (0.2 <= x <= 0.4) layers, IEEE DEVICE, 47(4), 2000, pp. 883-890
Authors:
Croke, ET
Grosse, F
Vajo, JJ
Gyure, MF
Floyd, M
Smith, DJ
Citation: Et. Croke et al., Substitutional C fraction and the influence of C on Si dimer diffusion in Si1-yCy alloys grown on (001) and (118) Si, APPL PHYS L, 77(9), 2000, pp. 1310-1312