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Results: 1-9 |
Results: 9
Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy
Authors: Hoke, WE Lemonias, PJ Kennedy, TD Torabi, A Tong, EK Bourque, RJ Jang, JH Cueva, G Dumka, DC Adesida, I Chang, KL Hsieh, KC
Citation: We. Hoke et al., Metamorphic heterojunction bipolar transistors and P-I-N photodiodes on GaAs substrates prepared by molecular beam epitaxy, J VAC SCI B, 19(4), 2001, pp. 1505-1509
Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates
Authors: Jang, JH Cueva, G Dumka, DC Hoke, WE Lemonias, PJ Adesida, I
Citation: Jh. Jang et al., Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates, IEEE PHOTON, 13(2), 2001, pp. 151-153
The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes
Authors: Jang, JH Cueva, G Dumka, DC Hoke, WE Lemonias, PJ Fay, P Adesida, I
Citation: Jh. Jang et al., The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes, IEEE PHOTON, 13(10), 2001, pp. 1097-1099
High performance 0.35 mu m gate-length monolithic enhancement/depletion-mode metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates
Authors: Dumka, DC Hoke, WE Lemonias, PJ Cueva, G Adesida, I
Citation: Dc. Dumka et al., High performance 0.35 mu m gate-length monolithic enhancement/depletion-mode metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates, IEEE ELEC D, 22(8), 2001, pp. 364-366
DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors with variable gate-lengths
Authors: Dumka, DC Cueva, G Hier, H Aina, OA Adesida, I
Citation: Dc. Dumka et al., DC and RF characteristics of doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors with variable gate-lengths, IEEE ELEC D, 22(1), 2001, pp. 5-7
Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As photodiodes on GaAs substrates
Authors: Jang, JH Cueva, G Dumka, DC Hoke, WE Lemonias, PJ Fay, P Adesida, I
Citation: Jh. Jang et al., Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As photodiodes on GaAs substrates, ELECTR LETT, 37(11), 2001, pp. 707-708
Novel HEMT processing technologies and their circuit applications
Authors: Adesida, I Mahajan, A Cueva, G Fay, P
Citation: I. Adesida et al., Novel HEMT processing technologies and their circuit applications, SOL ST ELEC, 43(8), 1999, pp. 1333-1338
Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with f(T) over 200 GHz
Authors: Dumka, DC Hoke, WE Lemonias, PJ Cueva, G Adesida, I
Citation: Dc. Dumka et al., Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with f(T) over 200 GHz, ELECTR LETT, 35(21), 1999, pp. 1854-1856
Doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors
Authors: Dumka, DC Cueva, G Adesida, I Hier, H Aina, OA
Citation: Dc. Dumka et al., Doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors, ELECTR LETT, 35(19), 1999, pp. 1673-1674
Risultati: 1-9 |