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Results: 1-18 |
Results: 18
Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy
Authors: Fry, PW Skolnick, MS Mowbray, DJ Itskevich, IE Finley, JJ Wilson, LR Schumacher, KL Barker, JA O'Reilly, EP Al-Khafaji, M Cullis, AG Hopkinson, M Clark, JC Hill, G
Citation: Pw. Fry et al., Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy, PHYSICA E, 9(1), 2001, pp. 106-113
Strain characterisation of shallow trench isolation structures on a nanometer scale by convergent beam electron diffraction
Authors: Armigliato, A Balboni, R Frabboni, S Benedetti, A Cullis, AG Carnevale, GP Colpani, P Pavia, G
Citation: A. Armigliato et al., Strain characterisation of shallow trench isolation structures on a nanometer scale by convergent beam electron diffraction, MAT SC S PR, 4(1-3), 2001, pp. 97-99
Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
Authors: Fry, PW Mowbray, DJ Itskevich, IE Skolnick, MS Barker, JA O'Reilly, EP Hopkinson, M Al-Khafaji, M David, JPR Cullis, AG Hill, G
Citation: Pw. Fry et al., Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots, PHYS ST S-B, 224(2), 2001, pp. 497-502
Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs
Authors: Walther, T Cullis, AG Norris, DJ Hopkinson, M
Citation: T. Walther et al., Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs, PHYS REV L, 86(11), 2001, pp. 2381-2384
Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy
Authors: Moran, M Meidia, H Fleischmann, T Norris, DJ Rees, GJ Cullis, AG Hopkinson, M
Citation: M. Moran et al., Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy, J PHYS D, 34(13), 2001, pp. 1943-1946
Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots
Authors: Migliorato, MA Wilson, LR Mowbray, DJ Skolnick, MS Al-Khafaji, M Cullis, AG Hopkinson, M
Citation: Ma. Migliorato et al., Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots, J APPL PHYS, 90(12), 2001, pp. 6374-6378
Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition
Authors: Fleischmann, T Moran, M Hopkinson, M Meidia, H Rees, GJ Cullis, AG Sanchez-Rojas, JL Izpura, I
Citation: T. Fleischmann et al., Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition, J APPL PHYS, 89(9), 2001, pp. 4689-4696
Cluster formation during annealing of ultra-low-energy boron-implanted silicon
Authors: Collart, EJH Murrell, AJ Foad, MA van den Berg, JA Zhang, S Armour, D Goldberg, RD Wang, TS Cullis, AG
Citation: Ejh. Collart et al., Cluster formation during annealing of ultra-low-energy boron-implanted silicon, J VAC SCI B, 18(1), 2000, pp. 435-439
Electronic properties of InAs/GaAs self-assembled quantum dot structures and devices studied by photocurrent spectroscopy
Authors: Mowbray, DJ Fry, PW Skolnick, MS Itskevich, IE Harris, L Ashmore, AD Finley, JJ Wilson, LR Schumacher, KL Barker, JA O'Reilly, EP Al-Khafaji, M Cullis, AG Hopkinson, M Clark, JC Hill, G
Citation: Dj. Mowbray et al., Electronic properties of InAs/GaAs self-assembled quantum dot structures and devices studied by photocurrent spectroscopy, ACT PHY P A, 98(3), 2000, pp. 279-293
Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
Authors: Fry, PW Itskevich, IE Parnell, SR Finley, JJ Wilson, LR Schumacher, KL Mowbray, DJ Skolnick, MS Al-Khafaji, M Cullis, AG Hopkinson, M Clark, JC Hill, G
Citation: Pw. Fry et al., Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots, PHYS REV B, 62(24), 2000, pp. 16784-16791
Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots
Authors: Fry, PW Itskevich, IE Mowbray, DJ Skolnick, MS Finley, JJ Barker, JA O'Reilly, EP Wilson, LR Larkin, IA Maksym, PA Hopkinson, M Al-Khafaji, M David, JPR Cullis, AG Hill, G Clark, JC
Citation: Pw. Fry et al., Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots, PHYS REV L, 84(4), 2000, pp. 733-736
Quantum confined Stark effect and permanent dipole moment of InAs-GaAs self-assembled quantum dots
Authors: Fry, PW Itskevich, IE Mowbray, DJ Skolnick, MS Barker, J O'Reilly, EP Hopkinson, M Al-Khafaji, M Cullis, AG Hill, G Clark, JC
Citation: Pw. Fry et al., Quantum confined Stark effect and permanent dipole moment of InAs-GaAs self-assembled quantum dots, PHYS ST S-A, 178(1), 2000, pp. 269-275
Elemental B distributions and clustering in low-energy B+ ion-implanted Si
Authors: Wang, TS Cullis, AG Collart, EJH Murrell, AJ Foad, MA
Citation: Ts. Wang et al., Elemental B distributions and clustering in low-energy B+ ion-implanted Si, APPL PHYS L, 77(22), 2000, pp. 3586-3588
Polarization effects in near-ground-state quantum wire lasers
Authors: Percival, C Woodhead, J Houston, PA Cullis, AG Hill, G Roberts, JS
Citation: C. Percival et al., Polarization effects in near-ground-state quantum wire lasers, APPL PHYS L, 77(19), 2000, pp. 2967-2969
Luminescence tuning of InAs/GaAs quantum dots grown on high-index planes
Authors: Patane, A Henini, M Polimeni, A Eaves, L Main, PC Al-Khafaji, M Cullis, AG
Citation: A. Patane et al., Luminescence tuning of InAs/GaAs quantum dots grown on high-index planes, SUPERLATT M, 25(1-2), 1999, pp. 113-117
SiGe virtual substrate N-channel heterojunction MOSFETs
Authors: O'Neill, AG Routley, P Gurry, PK Clifton, PA Kemhadjian, H Fernandez, J Cullis, AG Benedetti, A
Citation: Ag. O'Neill et al., SiGe virtual substrate N-channel heterojunction MOSFETs, SEMIC SCI T, 14(9), 1999, pp. 784-789
Investigation of nanoscale Ge segregation in p-channel SiGe/Si field effect transistor structures by electron energy loss imaging
Authors: Norris, DJ Cullis, AG Grasby, TJ Parker, EHC
Citation: Dj. Norris et al., Investigation of nanoscale Ge segregation in p-channel SiGe/Si field effect transistor structures by electron energy loss imaging, J APPL PHYS, 86(12), 1999, pp. 7183-7185
The refractive indices of Zn1-xCdxS alloys
Authors: Chen, P Nicholls, JE O'Neill, M Hogg, JHC Lunn, B Ashenford, DE Fay, M Cullis, AG
Citation: P. Chen et al., The refractive indices of Zn1-xCdxS alloys, SEMIC SCI T, 13(12), 1998, pp. 1439-1441
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