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Results: 1-11 |
Results: 11
Raman scattering determination of free charge density using a modified hydrodynamical model
Authors: Ibanez, J Cusco, R Artus, L
Citation: J. Ibanez et al., Raman scattering determination of free charge density using a modified hydrodynamical model, PHYS ST S-B, 223(3), 2001, pp. 715-722
Evaluation of free-carrier concentration in Si+-implanted InP by means of photoluminescence
Authors: Ibanez, J Cusco, R Artus, L de la Puente, E Jimenez, J
Citation: J. Ibanez et al., Evaluation of free-carrier concentration in Si+-implanted InP by means of photoluminescence, NUCL INST B, 175, 2001, pp. 246-251
Lattice recovery by rapid thermal annealing in Mg+-implanted InP assessed by Raman spectroscopy
Authors: Marcos, B Ibanez, J Cusco, R Martinez, FL Gonzalez-Diaz, G Artus, L
Citation: B. Marcos et al., Lattice recovery by rapid thermal annealing in Mg+-implanted InP assessed by Raman spectroscopy, NUCL INST B, 175, 2001, pp. 252-256
Probing bulk and surface damage in widegap semiconductors
Authors: Cunningham, W Gouldwell, A Lamb, G Roy, P Scott, J Mathieson, K Bates, R Smith, KM Cusco, R Watson, IM Glaser, M Rahman, M
Citation: W. Cunningham et al., Probing bulk and surface damage in widegap semiconductors, J PHYS D, 34(18), 2001, pp. 2748-2753
Generalization of the hydrodynamical model to analyze Raman scattering by free carriers: application to n-InP
Authors: Ibanez, J Cusco, R Blanco, N Gonzalez-Diaz, G Artus, L
Citation: J. Ibanez et al., Generalization of the hydrodynamical model to analyze Raman scattering by free carriers: application to n-InP, J LUMINESC, 87-9, 2000, pp. 595-597
Lattice damage study of implanted InGaAs by means of Raman spectroscopy
Authors: Hernandez, S Marcos, B Cusco, R Blanco, N Gonzalez-Diaz, G Artus, L
Citation: S. Hernandez et al., Lattice damage study of implanted InGaAs by means of Raman spectroscopy, J LUMINESC, 87-9, 2000, pp. 721-723
Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
Authors: Cusco, R Artus, L Ibanez, J Blanco, N Gonzalez-Diaz, G Rahman, M Long, AR
Citation: R. Cusco et al., Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors, J APPL PHYS, 88(11), 2000, pp. 6567-6570
Quantum-dot phonons in self-assembled InAs/GaAs quantum dots: Dependence on the coverage thickness
Authors: Artus, L Cusco, R Hernandez, S Patane, A Polimeni, A Henini, M Eaves, L
Citation: L. Artus et al., Quantum-dot phonons in self-assembled InAs/GaAs quantum dots: Dependence on the coverage thickness, APPL PHYS L, 77(22), 2000, pp. 3556-3558
Characterization of Mg+-implanted InP by Raman spectroscopy
Authors: Ibanez, J Cusco, R Blanco, N Gonzalez-Diaz, G Artus, L
Citation: J. Ibanez et al., Characterization of Mg+-implanted InP by Raman spectroscopy, NUCL INST B, 148(1-4), 1999, pp. 454-458
Raman scattering by LO phonon-plasmon coupled modes in n-type InP
Authors: Artus, L Cusco, R Ibanez, J Blanco, N Gonzalez-Diaz, G
Citation: L. Artus et al., Raman scattering by LO phonon-plasmon coupled modes in n-type InP, PHYS REV B, 60(8), 1999, pp. 5456-5463
Potential modulation by strain in lateral surface superlattices
Authors: Long, AR Skuras, E Vallis, S Cusco, R Larkin, IA Davies, JH Holland, MC
Citation: Ar. Long et al., Potential modulation by strain in lateral surface superlattices, PHYS REV B, 60(3), 1999, pp. 1964-1974
Risultati: 1-11 |