Authors:
YU ET
DANG XZ
YU LS
QIAO D
ASBECK PM
LAU SS
SULLIVAN GJ
BOUTROS KS
REDWING JM
Citation: Et. Yu et al., SCHOTTKY-BARRIER ENGINEERING IN III-V NITRIDES VIA THE PIEZOELECTRIC EFFECT, Applied physics letters, 73(13), 1998, pp. 1880-1882
Authors:
DANG XZ
WANG CD
YU ET
BOUTROS KS
REDWING JM
Citation: Xz. Dang et al., PERSISTENT PHOTOCONDUCTIVITY AND DEFECT LEVELS IN N-TYPE ALGAN GAN HETEROSTRUCTURES/, Applied physics letters, 72(21), 1998, pp. 2745-2747
Authors:
ZHANG GY
YANG ZJ
TONG YZ
JIN SX
DANG XZ
WANG SM
Citation: Gy. Zhang et al., P-TYPE GAN DIRECTLY GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Chinese Physics Letters, 14(8), 1997, pp. 637-640
Authors:
TONG YZ
ZHANG GY
JIN SX
YANG ZJ
DANG XZ
WANG SM
Citation: Yz. Tong et al., LOW-TEMPERATURE PHOTOLUMINESCENCE PROPERTIES OF INGAN FILMS GROWN ON (01(1)OVER-BAR2) AL2O3 AND (0001) AL2O3 SUBSTRATES BY LOW-PRESSURE MOVPE, Solid state communications, 102(5), 1997, pp. 405-408
Authors:
WAKAHARA A
TOKUDA T
DANG XZ
NODA S
SASAKI A
Citation: A. Wakahara et al., COMPOSITIONAL INHOMOGENEITY AND IMMISCIBILITY OF A GAINN TERNARY ALLOY, Applied physics letters, 71(7), 1997, pp. 906-908
Authors:
CHEN WX
HONG YG
DANG XZ
JIAO PF
WANG SM
XIA ZJ
ZHANG GY
TONG YZ
ZOU YH
Citation: Wx. Chen et al., SUBPICOSECOND DYNAMICS SPECTRA IN INGAAS GAAS STRAINED-LAYER AND STRAINED-QUANTUM-WELL/, Solid state communications, 96(9), 1995, pp. 675-677