AAAAAA

   
Results: 1-7 |
Results: 7

Authors: YU ET DANG XZ YU LS QIAO D ASBECK PM LAU SS SULLIVAN GJ BOUTROS KS REDWING JM
Citation: Et. Yu et al., SCHOTTKY-BARRIER ENGINEERING IN III-V NITRIDES VIA THE PIEZOELECTRIC EFFECT, Applied physics letters, 73(13), 1998, pp. 1880-1882

Authors: DANG XZ WANG CD YU ET BOUTROS KS REDWING JM
Citation: Xz. Dang et al., PERSISTENT PHOTOCONDUCTIVITY AND DEFECT LEVELS IN N-TYPE ALGAN GAN HETEROSTRUCTURES/, Applied physics letters, 72(21), 1998, pp. 2745-2747

Authors: ZHANG GY YANG ZJ TONG YZ JIN SX DANG XZ WANG SM
Citation: Gy. Zhang et al., P-TYPE GAN DIRECTLY GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Chinese Physics Letters, 14(8), 1997, pp. 637-640

Authors: TONG YZ ZHANG GY JIN SX YANG ZJ DANG XZ WANG SM
Citation: Yz. Tong et al., LOW-TEMPERATURE PHOTOLUMINESCENCE PROPERTIES OF INGAN FILMS GROWN ON (01(1)OVER-BAR2) AL2O3 AND (0001) AL2O3 SUBSTRATES BY LOW-PRESSURE MOVPE, Solid state communications, 102(5), 1997, pp. 405-408

Authors: ZHANG GY TONG YZ JIN SX DANG XZ YANG ZJ GAN ZZ
Citation: Gy. Zhang et al., EFFECTS OF THERMAL-CONVECTION ON GROWTH-RATE OF GAN BY MOVPE, Solid state communications, 102(4), 1997, pp. 331-334

Authors: WAKAHARA A TOKUDA T DANG XZ NODA S SASAKI A
Citation: A. Wakahara et al., COMPOSITIONAL INHOMOGENEITY AND IMMISCIBILITY OF A GAINN TERNARY ALLOY, Applied physics letters, 71(7), 1997, pp. 906-908

Authors: CHEN WX HONG YG DANG XZ JIAO PF WANG SM XIA ZJ ZHANG GY TONG YZ ZOU YH
Citation: Wx. Chen et al., SUBPICOSECOND DYNAMICS SPECTRA IN INGAAS GAAS STRAINED-LAYER AND STRAINED-QUANTUM-WELL/, Solid state communications, 96(9), 1995, pp. 675-677
Risultati: 1-7 |