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Results: 1-8 |
Results: 8
SPATIAL-DISTRIBUTION OF DEFECTS IN ION-IMPLANTED AND ANNEALED SI - THE RP 2 EFFECT/
Authors: KOGLER R YANKOV RA KASCHNY JR POSSELT M DANILIN AB SKORUPA W
Citation: R. Kogler et al., SPATIAL-DISTRIBUTION OF DEFECTS IN ION-IMPLANTED AND ANNEALED SI - THE RP 2 EFFECT/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 142(4), 1998, pp. 493-502
COMPENSATION OF THE MULTIBEAM EFFECT IN D EVICES OF GPS USERS
Authors: PISKORZH VV MINERVIN IN DANILIN AB
Citation: Vv. Piskorzh et al., COMPENSATION OF THE MULTIBEAM EFFECT IN D EVICES OF GPS USERS, Izvestia vyssih ucebnyh zavedenij. Radioelektronika, 40(3-4), 1997, pp. 38-43
PROXIMITY GETTERING OF COPPER IN SEPARATION-BY-IMPLANTED-OXYGEN STRUCTURES
Authors: YANKOV RA HATZOPOULOS N SKORUPA W DANILIN AB
Citation: Ra. Yankov et al., PROXIMITY GETTERING OF COPPER IN SEPARATION-BY-IMPLANTED-OXYGEN STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 60-63
RECEPTION OF RADIOIMAGES OF MULTIPOSITION RADIOLOCATION STATION USINGTHE REVERSED SYNTHESIS OF APERTURE
Authors: PISKORZH VV DANILIN AB MINERVIN IN NOZDRIN IG
Citation: Vv. Piskorzh et al., RECEPTION OF RADIOIMAGES OF MULTIPOSITION RADIOLOCATION STATION USINGTHE REVERSED SYNTHESIS OF APERTURE, Izvestia vyssih ucebnyh zavedenij. Radioelektronika, 39(11-12), 1996, pp. 74-77
PROXIMITY GETTERING OF TRANSITION-METALS IN SEPARATION BY IMPLANTED OXYGEN STRUCTURES
Authors: SKORUPA W HATZOPOULOS N YANKOV RA DANILIN AB
Citation: W. Skorupa et al., PROXIMITY GETTERING OF TRANSITION-METALS IN SEPARATION BY IMPLANTED OXYGEN STRUCTURES, Applied physics letters, 67(20), 1995, pp. 2992-2994
SEQUENTIAL ION-BEAM SYNTHESIS OF BURIED SI3N4 LAYERS IN SILICON
Authors: DANILIN AB DRAKIN KA MALININ AA MORDKOVICH VN PETROV AF SARAIKIN VV VYLETALINA OI
Citation: Ab. Danilin et al., SEQUENTIAL ION-BEAM SYNTHESIS OF BURIED SI3N4 LAYERS IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 83(1-2), 1993, pp. 173-176
SPATIAL LOCALIZATION OF THE BURIED ION-BEAM SYNTHESIZED LAYER OF SILICON DIOXIDE INCLUSIONS IN SILICON
Authors: DANILIN AB MALININ AA MORDKOVICH VN SARAIKIN VV VYLETALINA OI
Citation: Ab. Danilin et al., SPATIAL LOCALIZATION OF THE BURIED ION-BEAM SYNTHESIZED LAYER OF SILICON DIOXIDE INCLUSIONS IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 82(3), 1993, pp. 431-434
IMPACT OF IN-SITU PHOTOEXCITATION ON THE DEFECTIVITY OF SILICON LAYERIMPLANTED WITH DIFFERENT DOSE-RATES OF NITROGEN-IONS
Authors: DANILIN AB NEMIROVSKI AW
Citation: Ab. Danilin et Aw. Nemirovski, IMPACT OF IN-SITU PHOTOEXCITATION ON THE DEFECTIVITY OF SILICON LAYERIMPLANTED WITH DIFFERENT DOSE-RATES OF NITROGEN-IONS, Applied physics letters, 63(19), 1993, pp. 2647-2648
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