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Results: 4
SPATIAL-DISTRIBUTION OF THE RADIATION IN THE FAR ZONE OF INASSB INASSBP MESASTRIP LASERS AS A FUNCTION OF CURRENT/
Authors: DANILOVA TN DANILOVA AP ERSHOV OG IMENKOV AN SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., SPATIAL-DISTRIBUTION OF THE RADIATION IN THE FAR ZONE OF INASSB INASSBP MESASTRIP LASERS AS A FUNCTION OF CURRENT/, Semiconductors, 32(3), 1998, pp. 339-342
INASSBP DOUBLE-HETEROSTRUCTURE LASERS FOR THE SPECTRAL RANGE 2.7-3.0 MU-M (T = 77 K)
Authors: DANILOVA TN DANILOVA AP ERSHOV OG IMENKOV AN STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., INASSBP DOUBLE-HETEROSTRUCTURE LASERS FOR THE SPECTRAL RANGE 2.7-3.0 MU-M (T = 77 K), Semiconductors, 32(2), 1998, pp. 218-221
INASSB INASSBP DIODE-LASERS WITH SEPARATE ELECTRICAL AND OPTICAL CONFINEMENT, EMITTING AT 3-4 MU-M/
Authors: DANILOVA TN DANILOVA AP ERSHOV OG IMENKOV AH KOLCHANOVA NM STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., INASSB INASSBP DIODE-LASERS WITH SEPARATE ELECTRICAL AND OPTICAL CONFINEMENT, EMITTING AT 3-4 MU-M/, Semiconductors, 31(8), 1997, pp. 831-834
CURRENT TUNING OF THE EMISSION WAVELENGTH OF LOW-THRESHOLD MESA STRIPE LASERS UTILIZING INASSB INASSBP DOUBLE HETEROSTRUCTURES AND EMITTINGIN THE VICINITY OF 3.3-MU-M/
Authors: DANILOVA TN DANILOVA AP ERSHOV OG IMENKOV AN STEPANOV MV SHERSTNEV VV YAKOVLEV YP
Citation: Tn. Danilova et al., CURRENT TUNING OF THE EMISSION WAVELENGTH OF LOW-THRESHOLD MESA STRIPE LASERS UTILIZING INASSB INASSBP DOUBLE HETEROSTRUCTURES AND EMITTINGIN THE VICINITY OF 3.3-MU-M/, Semiconductors, 31(11), 1997, pp. 1200-1203
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